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Employment (1)

Soitec (France): Bernin, FR

2023-09-05 to present | Epitaxy Expert (Innovation)
Employment
Source: Self-asserted source
Andriy Hikavyy

Works (12)

Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices

ECS Journal of Solid State Science and Technology
2025-01-01 | Journal article
DOI: 10.1149/2162-8777/ada79f
Contributors: R. Loo; A. Akula; Y. Shimura; C. Porret; E. Rosseel; T. Dursap; A. Y. Hikavyy; M. Beggiato; J. Bogdanowicz; A. Merkulov et al.
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Crossref

Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices

Japanese Journal of Applied Physics
2023-04-01 | Journal article
DOI: 10.35848/1347-4065/acb1b9
Contributors: Clement Porret; Gianluca Rengo; Mustafa Ayyad; Andriy Hikavyy; Erik Rosseel; Robert Langer; Roger Loo
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(Digital Presentation) Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices

ECS Meeting Abstracts
2022-10-09 | Journal article
DOI: 10.1149/MA2022-02321188mtgabs
Contributors: Erik Rosseel; Clement Porret; Andriy Yakovitch Hikavyy; Roger Loo; Olivier Richard; Gerardo Tadeo Martinez; Dmitry Batuk; Hans Mertens; Eugenio Dentoni Litta; Naoto Horiguchi
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Crossref

(Digital Presentation) Selective SiGe Vapor Etching Using Br2 in View of Nanosheet Device Isolation

ECS Meeting Abstracts
2022-10-09 | Journal article
DOI: 10.1149/MA2022-02321194mtgabs
Contributors: Roger Loo; Nicolas Gosset; Megumi Isaji; Yumi Kawamura; Andriy Yakovitch Hikavyy; Erik Rosseel; Clement Porret; Ankit Nalin Mehta; Jean-Marc Girard
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Crossref

Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties

ECS Meeting Abstracts
2022-10-09 | Journal article
DOI: 10.1149/MA2022-02321216mtgabs
Contributors: Gianluca Rengo; Clement Porret; Andriy Yakovitch Hikavyy; Gitte Coenen; Mustafa Ayyad; Richard J. H. Morris; Simone Pollastri; Danilo Oliveira De Souza; Didier Grandjean; Roger Loo et al.
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Crossref

(Digital Presentation) Selective SiGe Vapor Etching Using Br2 in View of Nanosheet Device Isolation

ECS Transactions
2022-09-30 | Journal article
DOI: 10.1149/10904.0135ecst
Contributors: Roger Loo; Nicolas Gosset; Megumi Isaji; Yumi Kawamura; Andriy Yakovitch Hikavyy; Erik Rosseel; Clement Porret; Ankit Nalin Mehta; Jean-Marc Girard
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Crossref

Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties

ECS Transactions
2022-09-30 | Journal article
DOI: 10.1149/10904.0249ecst
Contributors: Gianluca Rengo; Clement Porret; Andriy Yakovitch Hikavyy; Gitte Coenen; Mustafa Ayyad; Richard J. H. Morris; Simone Pollastri; Danilo Oliveira De Souza; Didier Grandjean; Roger Loo et al.
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Crossref

Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices

ECS Transactions
2022-09-30 | Journal article
DOI: 10.1149/10904.0093ecst
Contributors: Erik Rosseel; Clement Porret; Andriy Yakovitch Hikavyy; Roger Loo; Olivier Richard; Gerardo Tadeo Martinez; Dmitry Batuk; Hans Mertens; Eugenio Dentoni Litta; Naoto Horiguchi
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Crossref

B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts

ECS Journal of Solid State Science and Technology
2022-02-01 | Journal article
DOI: 10.1149/2162-8777/ac546e
Contributors: Gianluca Rengo; Clement Porret; Andriy Hikavyy; Erik Rosseel; Mustafa Ayyad; Richard J. H. Morris; Rami Khazaka; Roger Loo; André Vantomme
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Crossref

Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

ECS Journal of Solid State Science and Technology
2021-01-01 | Journal article
DOI: 10.1149/2162-8777/abd885
Contributors: R. Loo; A. Jourdain; G. Rengo; C. Porret; A. Hikavyy; M. Liebens; L. Becker; P. Storck; G. Beyer; E. Beyne
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Crossref

TEM investigations of gate-all-around nanowire devices

Semiconductor Science and Technology
2019-12-01 | Journal article
DOI: 10.1088/1361-6641/ab4b8b
Contributors: P Favia; O Richard; G Eneman; H Mertens; H Arimura; E Capogreco; A Hikavyy; L Witters; P Kundu; R Loo et al.
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Crossref

Application of Cl2 for low temperature etch and epitaxy

Semiconductor Science and Technology
2019-07-01 | Journal article
DOI: 10.1088/1361-6641/aafc93
Contributors: Andriy Hikavyy; Clement Porret; Erik Rosseel; Alexey Milenin; Roger Loo
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