Personal information

Emails & domains

Verified email domains

Other IDs

Scopus Author ID: 56323571700
ResearcherID: E-4835-2019

Activities

Collapse all

Works (34)

Growth of κ-([Al,In]xGa1-x)2O3 Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors

ACS Applied Materials & Interfaces
2023-06-21 | Journal article
DOI: 10.1021/acsami.3c02695
Contributors: Thorsten Schultz; Max Kneiß; Philipp Storm; Daniel Splith; Holger von Wenckstern; Christoph T. Koch; Adnan Hammud; Marius Grundmann; Norbert Koch
Source: check_circle
Crossref

PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties

APL Materials
2023-06-01 | Journal article
DOI: 10.1063/5.0149797
Contributors: Clemens Petersen; Sofie Vogt; Max Kneiß; Holger von Wenckstern; Marius Grundmann
Source: check_circle
Crossref

Masked-assisted radial-segmented target pulsed-laser deposition: A novel method for area-selective deposition using pulsed-laser deposition

Journal of Vacuum Science & Technology A
2023-03 | Journal article
DOI: 10.1116/6.0002275
Contributors: Laurenz Thyen; Daniel Splith; Max Kneiß; Marius Grundmann; Holger von Wenckstern
Source: check_circle
Crossref

Correction to: Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt

Journal of Materials Research
2021-12-14 | Journal article
DOI: 10.1557/s43578-021-00406-z
Contributors: Max Kneiß; Daniel Splith; Holger von Wenckstern; Michael Lorenz; Thorsten Schultz; Norbert Koch; Marius Grundmann
Source: check_circle
Crossref

Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt

Journal of Materials Research
2021-12-14 | Journal article
DOI: 10.1557/s43578-021-00375-3
Contributors: Max Kneiß; Daniel Splith; Holger von Wenckstern; Michael Lorenz; Thorsten Schultz; Norbert Koch; Marius Grundmann
Source: check_circle
Crossref

Epitaxial growth of rhombohedral β- and cubic γ-CuI

Journal of Crystal Growth
2021-09 | Journal article
DOI: 10.1016/j.jcrysgro.2021.126218
Contributors: Volker Gottschalch; Gabriele Benndorf; Susanne Selle; Evgeny Krüger; Steffen Blaurock; Max Kneiß; Michael Bar; Chris Sturm; Stefan Merker; Thomas Höche et al.
Source: check_circle
Crossref

Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

Journal of Applied Physics
2021-08-28 | Journal article
DOI: 10.1063/5.0056630
Contributors: M. Kneiß; D. Splith; P. Schlupp; A. Hassa; H. von Wenckstern; M. Lorenz; M. Grundmann
Source: check_circle
Crossref

Epitaxial Growth of κ‐(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition

physica status solidi (b)
2021-02 | Journal article
DOI: 10.1002/pssb.202000359
Contributors: Max Kneiß; Philipp Storm; Anna Hassa; Daniel Splith; Holger von Wenckstern; Michael Lorenz; Marius Grundmann
Source: check_circle
Crossref

Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range

physica status solidi (b)
2021-02 | Journal article
DOI: 10.1002/pssb.202000394
Contributors: Anna Hassa; Philipp Storm; Max Kneiß; Daniel Splith; Holger von Wenckstern; Michael Lorenz; Marius Grundmann
Source: check_circle
Crossref

Control of phase formation of (AlxGa1 − x)2O3 thin films on c-plane Al2O3

Journal of Physics D: Applied Physics
2020-11-25 | Journal article
DOI: 10.1088/1361-6463/abaf7d
Contributors: Anna Hassa; Charlotte Wouters; Max Kneiß; Daniel Splith; Chris Sturm; Holger von Wenckstern; Martin Albrecht; Michael Lorenz; Marius Grundmann
Source: check_circle
Crossref

Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation

Journal of Applied Physics
2020-11-21 | Journal article
DOI: 10.1063/5.0030262
Contributors: Robert Staacke; Roger John; Max Kneiß; Christian Osterkamp; Séverine Diziain; Fedor Jelezko; Marius Grundmann; Jan Meijer
Source: check_circle
Crossref

Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures

APL Materials
2020-05-01 | Journal article
DOI: 10.1063/5.0007137
Contributors: M. Kneiß; P. Storm; A. Hassa; D. Splith; H. von Wenckstern; M. Lorenz; M. Grundmann
Source: check_circle
Crossref

Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74

Journal of Applied Physics
2020-03-14 | Journal article
DOI: 10.1063/5.0002875
Contributors: Chaker Fares; Minghan Xian; David J. Smith; Martha R. McCartney; Max Kneiß; Holger von Wenckstern; Marius Grundmann; Marko Tadjer; Fan Ren; S. J. Pearton
Source: check_circle
Crossref

Band Offsets at κ-([Al,In]xGa1–x)2O3/MgO Interfaces

ACS Applied Materials & Interfaces
2020-02-19 | Journal article
DOI: 10.1021/acsami.9b21128
Contributors: Thorsten Schultz; Max Kneiß; Philipp Storm; Daniel Splith; Holger von Wenckstern; Marius Grundmann; Norbert Koch
Source: check_circle
Crossref

Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

APL Materials
2020-02-01 | Journal article
DOI: 10.1063/1.5141041
Contributors: A. Hassa; C. Sturm; M. Kneiß; D. Splith; H. von Wenckstern; T. Schultz; N. Koch; M. Lorenz; M. Grundmann
Source: check_circle
Crossref

A Review of the Segmented-Target Approach to Combinatorial Material Synthesis by Pulsed-Laser Deposition

Physica Status Solidi (B) Basic Research
2019 | Journal article
DOI: 10.1002/pssb.201900626
EID:

2-s2.0-85076720475
Contributors: von Wenckstern, H.; Kneiß, M.; Hassa, A.; Storm, P.; Splith, D.; Grundmann, M.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65

ECS Journal of Solid State Science and Technology
2019 | Journal article
DOI: 10.1149/2.0261906jss
ISSN: 2162-8769
ISSN: 2162-8777
Source: Self-asserted source
Max Kneiß
grade
Preferred source (of 2)‎

Band offsets of insulating &amp; semiconducting oxides on (Al<inf>x</inf>Ga<inf>1-x</inf>)O<inf>3</inf>

ECS Transactions
2019 | Conference paper
DOI: 10.1149/09207.0079ecst
EID:

2-s2.0-85077211179
Contributors: Fares, C.; Kneiß, M.; Von Wenckstern, H.; Grundmann, M.; Tadjer, M.; Ren, F.; Hays, D.C.; Gila, B.P.; Pearton, S.J.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Effect of annealing on the band alignment of ALD SiO<inf>2</inf> on (Al<inf>x</inf>Ga<inf>1-x</inf>)<inf>2</inf>O<inf>3</inf> for x = 0.2 - 0.65

ECS Journal of Solid State Science and Technology
2019 | Journal article
DOI: 10.1149/2.0251911jss
EID:

2-s2.0-85077493863
Contributors: Fares, C.; Islam, Z.; Haque, A.; Kneiß, M.; Von Wenckstern, H.; Grundmann, M.; Tadjer, M.; Ren, F.; Pearton, S.J.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Heteroepitaxial growth of α-, β-, γ- and κ-Ga <inf>2</inf> O <inf>3</inf> phases by metalorganic vapor phase epitaxy

Journal of Crystal Growth
2019 | Journal article
DOI: 10.1016/j.jcrysgro.2019.01.018
EID:

2-s2.0-85060540676
Contributors: Gottschalch, V.; Merker, S.; Blaurock, S.; Kneiß, M.; Teschner, U.; Grundmann, M.; Krautscheid, H.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Highly transparent conductors for optical and microwave access to spin-based quantum systems

npj Quantum Information
2019-11-15 | Journal article
DOI: 10.1038/s41534-019-0216-1
Contributors: Robert Staacke; Roger John; Max Kneiß; Marius Grundmann; Jan Meijer
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

APL Materials
2019-11-01 | Journal article
DOI: 10.1063/1.5124231
Contributors: P. Storm; M. Kneiß; A. Hassa; T. Schultz; D. Splith; H. von Wenckstern; N. Koch; M. Lorenz; M. Grundmann
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

APL Materials
2019-10-01 | Journal article
DOI: 10.1063/1.5120578
Contributors: M. Kneiß; A. Hassa; D. Splith; C. Sturm; H. von Wenckstern; M. Lorenz; M. Grundmann
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]

APL Materials
2019-07 | Journal article
DOI: 10.1063/1.5099518
Contributors: A. Hassa; H. von Wenckstern; D. Splith; C. Sturm; M. Kneiß; V. Prozheeva; M. Grundmann
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

APL Materials
2019-07 | Journal article
DOI: 10.1063/1.5110498
Contributors: Chaker Fares; Max Kneiß; Holger von Wenckstern; Marius Grundmann; Marko Tadjer; Fan Ren; Eric Lambers; S. J. Pearton
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

APL Materials
2019-02 | Journal article
DOI: 10.1063/1.5054394
Contributors: A. Hassa; H. von Wenckstern; D. Splith; C. Sturm; M. Kneiß; V. Prozheeva; M. Grundmann
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

APL Materials
2019-02 | Journal article
DOI: 10.1063/1.5054378
Contributors: M. Kneiß; A. Hassa; D. Splith; C. Sturm; H. von Wenckstern; T. Schultz; N. Koch; M. Lorenz; M. Grundmann
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Combinatorial Material Science and Strain Engineering Enabled by Pulsed Laser Deposition Using Radially Segmented Targets

ACS Combinatorial Science
2018-11-12 | Journal article
DOI: 10.1021/acscombsci.8b00100
Contributors: Max Kneiß; Philipp Storm; Gabriele Benndorf; Marius Grundmann; Holger von Wenckstern
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

Advanced Materials Interfaces
2018-03 | Journal article
DOI: 10.1002/admi.201701411
Contributors: Max Kneiß; Chang Yang; José Barzola‐Quiquia; Gabriele Benndorf; Holger von Wenckstern; Pablo Esquinazi; Michael Lorenz; Marius Grundmann
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

Nature Communications
2017 | Journal article
DOI: 10.1038/ncomms16076
EID:

2-s2.0-85022178980
Contributors: Yang, C.; Souchay, D.; Kneiß, M.; Bogner, M.; Wei, H.M.; Lorenz, M.; Oeckler, O.; Benstetter, G.; Fu, Y.Q.; Grundmann, M.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 10<sup>9</sup>

Scientific Reports
2016 | Journal article
DOI: 10.1038/srep21937
EID:

2-s2.0-84959377832
Contributors: Yang, C.; Kneiß, M.; Schein, F.-L.; Lorenz, M.; Grundmann, M.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Room-Temperature synthesized copper iodide thin filmas degenerate p-Type transparent conductor with a boosted figure of merit

Proceedings of the National Academy of Sciences of the United States of America
2016 | Journal article
DOI: 10.1073/pnas.1613643113/-/DCSupplemental
EID:

2-s2.0-84996587729
Contributors: Yang, C.; Kneib, M.; Lorenz, M.; Grundmann, M.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

From high-T<inf>c</inf> superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig

Semiconductor Science and Technology
2015 | Journal article
DOI: 10.1088/0268-1242/30/2/024003
EID:

2-s2.0-84921534479
Contributors: Lorenz, M.; Hochmuth, H.; Kneiß, M.; Bonholzer, M.; Jenderka, M.; Grundmann, M.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO<inf>2</inf> anatase thin films

Applied Physics Letters
2014 | Journal article
DOI: 10.1063/1.4892811
EID:

2-s2.0-84905991023
Contributors: Kneiß, M.; Jenderka, M.; Brachwitz, K.; Lorenz, M.; Grundmann, M.
Source: Self-asserted source
Max Kneiß via Scopus - Elsevier

Peer review (17 reviews for 10 publications/grants)

Review activity for ACS applied electronic materials. (2)
Review activity for ACS applied materials & interfaces. (1)
Review activity for AIP advances. (1)
Review activity for Applied physics letters. (4)
Review activity for Journal of applied physics. (1)
Review activity for Journal of electronic materials. (1)
Review activity for Journal of electronic materials. (1)
Review activity for Journal of materials research. (1)
Review activity for Materials science in semiconductor processing. (2)
Review activity for Physica status solidi. (3)
How many people are using ORCID?