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IoT-memristor- thin film transistor- Oxide electronic-Paper electronic
Portugal

Biography

Asal Kiazadeh received her PhD degree with highest distinction in Electronics and Optoelectronics at University of Algarve in a collaborative project with Philips Research Laboratories, in December 2013. Her thesis topic is resistive switching memories based on nanoparticles. She is senior researcher of distinction at i3N/CENIMAT of Nova de Lisboa University (recognized by competitive contest of CEEC, 4th edition- ref.2021.03386.CEECIND). Her research aims to investigate the electrical properties of a promising class of flexible materials based on amorphous oxide applied for memristors and thin film transistors (physical level-device level) for IoT applications. She has several Master students each year and has supervised more than 15 master students with thesis theme on memristive devices. Currently, she is principal investigator (PI) of the project NeurOxide (PTDC/NAN-. MAT/30812). The aim is to integrate thin film transistors and memristors for neuromorphic networks. she is orienting a research team consisting of four PhD students and two junior postdoc researchers. Furthermore, she developed a new course entitled Recording Electronic Information for Master students in Micro- and Nanotechnology, Electronics and Informatic (IT). It aims to give an overview on the current memory and computing technology trends from material and physics point of view up to the circuit level. She has published more than 30 peer-reviewed papers, of which 20 of them were published during the last 5 years. In most of the papers, she is either first author or corresponding author. She is first author of a book chapter in the 2nd editions of Advances in Non-Volatile Memory and Storage Technology. She is also a member in the organization team of the Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), since 2016 up to present. Concerning international collaborations, she collaborates with Prof. Weidong Zhang from Nanoelectronics Department of Liverpool John Moores University (LJMU) for on-line training of AOS-based memristor cross bars. She is also orienting a shared PhD grant between UNL and LJMU. She is Guest Editor of Micromachines (IF: 2.53) for the Special Issue: Amorphous oxide semiconductor-based memristive devices and thin film transistors.
In terms of international recognition, it was my honour to serve as a jury member of the PhD defense of Dr. Carlos Rosario, whose work was under supervision of Prof. Rainer Waser, from RWTH Aachen, who is the leading scientist in oxide memristor technology world-wide.

Activities

Employment (2)

Universidade NOVA de Lisboa: Lisboa, PT

Employment
Source: check_circle
Universidade Nova de Lisboa

Universidade Nova de Lisboa: Caparica, Setubal, PT

2014-01-10 to present | Priciple Researcher- (flexible electronics-device and modeling) (DCM-CENIMAT)
Employment
Source: Self-asserted source
Asal Kiazadeh

Education and qualifications (1)

Universidade do Algarve: Faro, Gambelas, PT

2009-09-01 to 2013-12-17 | PhD electronics- Thesis: resistive memory devices based on nanoparticles (electronic department)
Education
Source: Self-asserted source
Asal Kiazadeh

Professional activities (1)

Advanced Doctoral Conference on computing, Electrical and Industrial Systems (DoCEIS): Caparica, caparica, PT

2016-01-02 to present | Member of the Program Committee (Electronics and computer department )
Membership
Source: Self-asserted source
Asal Kiazadeh

Funding (2)

TERahertz ReconfigurAble METAsurfaces for ultra-high rate wireless communications

2023-01-01 to 2026-01-01 | Grant
European Finance Association (Brussels, BE)
GRANT_NUMBER:

101097101

Source: check_circle
CIÊNCIAVITAE

NeurOxide

2018-10 to 2021-10 | Grant
Ministério da Educação e Ciência (Lisbon, Lisbon, PT)
Source: Self-asserted source
Asal Kiazadeh
grade
Preferred source (of 2)‎

Works (50 of 65)

Items per page:
Page 1 of 2

Inkjet printed IGZO memristors with volatile and non-volatile switching

Scientific Reports
2024-12 | Journal article | Author
SOURCE-WORK-ID:

03861751-36af-4ff3-adec-0b5a246d706a

EID:

2-s2.0-85188820422

WOSUID:

001195862400024

Contributors: Miguel Franco; Asal Kiazadeh; Jonas Deuermeier; S. Lanceros-Méndez; Rodrigo Martins; Emanuel Carlos
Source: check_circle
Universidade Nova de Lisboa

Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications

Advanced Electronic Materials
2024-10 | Journal article
Contributors: Miguel Franco; Asal Kiazadeh; Rodrigo Martins; Senentxu Lanceros‐Méndez; Emanuel Carlos
Source: check_circle
Crossref

Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity

ACS Applied Electronic Materials
2024-07-23 | Journal article
Contributors: Maria Elias Pereira; Jonas Deuermeier; Rodrigo Martins; Pedro Barquinha; Asal Kiazadeh
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Low-Temperature Solution-Based Molybdenum Oxide Memristors

ACS Applied Engineering Materials
2024-02-23 | Journal article
Contributors: Raquel Azevedo Martins; Emanuel Carlos; Asal Kiazadeh; Rodrigo Martins; Jonas Deuermeier
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Concept paper on novel radio frequency resistive switches

NANOARCH '23
2024-01-25 | Conference paper | Author
SOURCE-WORK-ID:

5cc9dd41-088e-4b22-b264-60eea89aa998

EID:

2-s2.0-85184295963

Part of ISBN: 979-8-4007-0325-6
Contributors: Asal Kiazadeh; Jonas Deuermeier; Emanuel Carlos; Rodrigo Martins; Sérgio Matos; Fábio Martinho Cardoso; Luís Manuel Pessoa
Source: check_circle
Universidade Nova de Lisboa
grade
Preferred source (of 3)‎

A Segmented DAC Using a-IGZO TFTs for Memristor Based Neural Network Accelerators

IFETC 2023 - 5th IEEE International Flexible Electronics Technology Conference
2023 | Conference paper | Author
SOURCE-WORK-ID:

49b14080-dd9a-4291-8270-6cfbbf9550ed

EID:

2-s2.0-85174422191

Part of ISBN: 979-8-3503-3209-4
Contributors: Sagar Das; Suyash Shrivastava; Pydi Bahubalindruni; Asal Kiazadeh
Source: check_circle
Universidade Nova de Lisboa
grade
Preferred source (of 2)‎

Depletion Based Digital and Analogue Circuits with n-Channel IGZO Thin Film Transistors

ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems
2023 | Conference paper | Author
SOURCE-WORK-ID:

8aab5c16-d8e5-4683-a3a5-0ef20e7e11b1

EID:

2-s2.0-85167704713

WOSUID:

001038214601045

Part of ISBN: 978-1-6654-5109-3
Contributors: Guilherme Carvalho; Maria Elias Pereira; Asal Kiazadeh; Vítor Grade Tavares
Source: check_circle
Universidade Nova de Lisboa
grade
Preferred source (of 2)‎

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Advanced Electronic Materials
2023-11 | Journal article
Contributors: Carlos Silva; Jonas Deuermeier; Weidong Zhang; Emanuel Carlos; Pedro Barquinha; Rodrigo Martins; Asal Kiazadeh
Source: check_circle
Crossref
grade
Preferred source (of 3)‎

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Neuromorphic Computing and Engineering
2023-06-01 | Journal article
Contributors: Maria Elias Pereira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha; Asal Kiazadeh
Source: check_circle
Crossref
grade
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Analog ZTO resistive switching devices for neuromorphic applications

NeumatDeCaS
2023-01-23 | Conference poster
SOURCE-WORK-ID:

cv-prod-id-4205223

Contributors: Carlos Silva; Deuermeier, Jonas; Azevedo Martins, Raquel; Maria Elias Pereira; Martins, Rodrigo; Kiazadeh, Asal
Source: check_circle
CIÊNCIAVITAE

Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware

Advanced Electronic Materials
2022-11 | Journal article | Author
SOURCE-WORK-ID:

edf25f80-793b-4bda-9d33-5c50900c5c22

EID:

2-s2.0-85138311589

WOSUID:

000850308600001

Contributors: Maria Elias Pereira; Jonas Deuermeier; Cátia Figueiredo; Ângelo Santos; Guilherme Carvalho; Vítor Grade Tavares; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha; Asal Kiazadeh
Source: check_circle
Universidade Nova de Lisboa

Characterization and modeling of resistive switching phenomena in IGZO devices

AIP Advances
2022-08-01 | Journal article | Author
SOURCE-WORK-ID:

51037892-338a-43a2-aff8-148d32193a0b

EID:

2-s2.0-85137097949

WOSUID:

000843002000013

Contributors: G. Carvalho; Maria Elias Pereira; Carlos Silva; Jonas Deuermeier; Asal Kiazadeh; V. Tavares
Source: check_circle
Universidade Nova de Lisboa
grade
Preferred source (of 2)‎

Emergent solution based IGZO memristor towards neuromorphic applications

Journal of Materials Chemistry C
2022-02-14 | Journal article | Author
SOURCE-WORK-ID:

227d404b-fe35-49ae-978d-3ae3f33f612d

EID:

2-s2.0-85124656584

WOSUID:

000745826700001

Contributors: Raquel Azevedo Martins; Emanuel Carlos; Jonas Deuermeier; Maria Elias Pereira; Rodrigo Martins; Elvira Fortunato; Asal Kiazadeh
Source: check_circle
Universidade Nova de Lisboa

Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

APL Materials
2022-01-01 | Journal article
Contributors: Maria Elias Pereira; Jonas Deuermeier; Pedro Freitas; Pedro Barquinha; Weidong Zhang; Rodrigo Martins; Elvira Fortunato; Asal Kiazadeh
Source: check_circle
Crossref
grade
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Design and synthesis of low temperature printed metal oxide memristors

Journal of Materials Chemistry C
2021 | Journal article
SOURCE-WORK-ID:

cv-prod-id-2307328

SOURCE-WORK-ID:

2edc392e-9d93-46ce-9269-1583afffc45e

WOSUID:

000632592400016

EID:

2-s2.0-85103243122

Contributors: Carlos, Emanuel; Deuermeier, Jonas; Branquinho, Rita; Gaspar, Cristina; Martins, Rodrigo; Kiazadeh, Asal; Fortunato, Elvira
Source: check_circle
CIÊNCIAVITAE
grade
Preferred source (of 2)‎

A Neural Network Approach towards Generalized Resistive Switching Modelling

Micromachines
2021-09-21 | Journal article
Contributors: Guilherme Carvalho; Maria Pereira; Asal Kiazadeh; Vítor Grade Tavares
Source: check_circle
Crossref
grade
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An overview of charge-trapping type switching in mixed transition metal oxide Schottky diodes

E-MRS Spring Meeting
2021-05-31 | Conference poster
SOURCE-WORK-ID:

cv-prod-id-4205220

Contributors: Deuermeier, Jonas; Maria Elias Lopes Pereira; Martins, Jorge; Carlos Silva; Philipp Wendel; Dominik Dietz; Andreas Klein; et al.
Source: check_circle
CIÊNCIAVITAE

Amorphous oxide based memristores for neuromorphic applications

EuroNanoForum 2021
2021-05-05 | Conference poster
SOURCE-WORK-ID:

cv-prod-id-4205221

Contributors: Carlos Silva; Martins, Jorge; Deuermeier, Jonas; Maria Elias Pereira; Freitas, Pedro; Wei Zhang ; Martins, Rodrigo; Fortunato, Elvira; Kiazadeh, Asal
Source: check_circle
CIÊNCIAVITAE

Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

Electronic Materials
2021-04-16 | Journal article
Contributors: Carlos Silva; Jorge Martins; Jonas Deuermeier; Maria Elias Pereira; Ana Rovisco; Pedro Barquinha; João Goes; Rodrigo Martins; Elvira Fortunato; Asal Kiazadeh
Source: check_circle
Crossref
grade
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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Advanced Materials
2021-02 | Journal article
Contributors: Emanuel Carlos; Rita Branquinho; Rodrigo Martins; Asal Kiazadeh; Elvira Fortunato
Source: check_circle
Crossref

Ta2O5/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs

Electronic Materials
2020-12-29 | Journal article | Author
SOURCE-WORK-ID:

f4d344ab-7c0b-43b6-840f-b7b3a8e762c8

EID:

2-s2.0-85123841752

Contributors: Jorge Martins; Asal Kiazadeh; J.V. Pinto; A. Rovisco; Tiago Gonçalves; Jonas Deuermeier; Eduardo Alves; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha
Source: check_circle
Universidade Nova de Lisboa
grade
Preferred source (of 2)‎

Tantalum/Silicon multicomponent oxides for TFTs and synaptic devices

Encontro com a Ciência e Tecnologia em Portugal
2020-11-03 | Conference poster
SOURCE-WORK-ID:

cv-prod-id-4205222

Contributors: Martins, Jorge; Kiazadeh, Asal; Rovisco, Ana; Joana V. Pinto; Deuermeier, Jonas; Fortunato, Elvira; Martins, Rodrigo; Barquinha, Pedro
Source: check_circle
CIÊNCIAVITAE

Noble-Metal-Free Memristive Devices Based on IGZO for Neuromorphic Applications

Advanced Electronic Materials
2020-10-01 | Journal article | Author
SOURCE-WORK-ID:

adb9405d-77ad-4449-bbb6-c930d0e26055

WOSUID:

000558658500001

EID:

2-s2.0-85089383313

Contributors: Maria Pereira; Jonas Deuermeier; Ricardo Nogueira; Patricia Almeida Carvalho; Rodrigo Martins; Elvira Fortunato; Asal Kiazadeh
Source: check_circle
Universidade Nova de Lisboa

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Advanced Electronic Materials
2020-02 | Journal article
Contributors: Nuno Casa Branca; Jonas Deuermeier; Jorge Martins; Emanuel Carlos; Maria Pereira; Rodrigo Martins; Elvira Fortunato; Asal Kiazadeh
Source: check_circle
Crossref
grade
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Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

Faraday Discussions
2019 | Journal article
Contributors: Elia Ambrosi; Philip Bartlett; Alexandra I. Berg; Stefano Brivio; Geoffrey Burr; Sweety Deswal; Jonas Deuermeier; Masa-aki Haga; Asal Kiazadeh; Gabriela Kissling et al.
Source: check_circle
Crossref
grade
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Flexible and transparent ReRAM devices for system on panel (SOP) application

Advances in Non-Volatile Memory and Storage Technology- Second edition
2019 | Book chapter
SOURCE-WORK-ID:

9eff78aa-5079-4684-ac91-2556737236fc

SOURCE-WORK-ID:

cv-prod-id-1194559

EID:

2-s2.0-85076758526

Contributors: Kiazadeh, Asal; Deuermeier, Jonas
Source: check_circle
CIÊNCIAVITAE
grade
Preferred source (of 2)‎

Multi-level cell properties of a bilayer Cu<inf>2</inf>O/Al<inf>2</inf>O<inf>3</inf> resistive switching device

Nanomaterials
2019 | Journal article
EID:

2-s2.0-85071017113

Contributors: Deuermeier, J.; Kiazadeh, A.; Klein, A.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Synaptic and neuromorphic functions: General discussion

Faraday Discussions
2019 | Journal article
EID:

2-s2.0-85061779394

Contributors: Berg, A.I.; Brivio, S.; Brown, S.; Burr, G.; Deswal, S.; Deuermeier, J.; Gale, E.; Hwang, H.; Ielmini, D.; Indiveri, G. et al.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

Faraday Discussions
2019 | Journal article
EID:

2-s2.0-85061787630

Contributors: Aono, M.; Baeumer, C.; Bartlett, P.; Brivio, S.; Burr, G.; Burriel, M.; Carlos, E.; Deswal, S.; Deuermeier, J.; Dittmann, R. et al.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Low power electronics based on Parylene-C hybrid devices: top gate vs bottom gate TFTs

5th annual Innovations in Large-Area Electronics Conference (innoLAE 2019)
2019-01-22 | Conference poster
SOURCE-WORK-ID:

cv-prod-id-4205218

Contributors: Joana V. Pinto; C.F. Fernandes; Inês Martins; Rovisco, Ana; Martins, Jorge; Kiazadeh, Asal; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira
Source: check_circle
CIÊNCIAVITAE

NeurOXide

2019-01-01 | Website
SOURCE-WORK-ID:

cv-prod-id-1789391

OTHER-ID:

https://sites.fct.unl.pt/neuroxide

Contributors: Kiazadeh, Asal
Source: check_circle
CIÊNCIAVITAE

Critical role of a double-layer configuration in solution-based unipolar resistive switching memories

Nanotechnology
2018-08-24 | Journal article
Contributors: Emanuel Carlos; Asal Kiazadeh; Jonas Deuermeier; Rita Branquinho; Rodrigo Martins; Elvira Fortunato
Source: check_circle
Crossref
grade
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Bias stress and temperature impact on InGaZnO TFTs and circuits

Materials
2017 | Journal article
EID:

2-s2.0-85021134282

Contributors: Martins, J.; Bahubalindruni, P.; Rovisco, A.; Kiazadeh, A.; Martins, R.; Fortunato, E.; Barquinha, P.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation

ACS Applied Materials and Interfaces
2017 | Journal article
EID:

2-s2.0-85035075814

Contributors: Carlos, E.; Branquinho, R.; Kiazadeh, A.; Martins, J.; Barquinha, P.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Solution based zinc tin oxide TFTs: The dual role of the organic solvent

Journal of Physics D: Applied Physics
2017 | Journal article
EID:

2-s2.0-85011282332

Contributors: Salgueiro, D.; Kiazadeh, A.; Branquinho, R.; Santos, L.; Barquinha, P.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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“Electro-Typing” on a Carbon-Nanoparticles-Filled Polymeric Film using Conducting Atomic Force Microscopy

Advanced Materials
2017 | Journal article
EID:

2-s2.0-85038013735

Contributors: Goswami, S.; Nandy, S.; Banerjee, A.N.; Kiazadeh, A.; Dillip, G.R.; Pinto, J.V.; Joo, S.W.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Memristors Using Solution-Based IGZO Nanoparticles

ACS Omega
2017-11-30 | Journal article
Contributors: Jose Rosa; Asal Kiazadeh; Lídia Santos; Jonas Deuermeier; Rodrigo Martins; Henrique Leonel Gomes; Elvira Fortunato
Source: check_circle
Crossref
grade
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Memristors Using Solution-Based IGZO Nanoparticles

ACSOmega 2017, 2, 8366 − 837
2017-10-29 | Journal article
Source: Self-asserted source
Asal Kiazadeh

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

Applied Physics Letters
2016 | Journal article
EID:

2-s2.0-84981155175

Contributors: Kiazadeh, A.; Gomes, H.L.; Barquinha, P.; Martins, J.; Rovisco, A.; Pinto, J.V.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance

Journal of Display Technology
2016 | Journal article
EID:

2-s2.0-84975226429

Contributors: Bahubalindruni, P.G.; Kiazadeh, A.; Sacchetti, A.; Martins, J.; Rovisco, A.; Tavares, V.G.; Martins, R.; Fortunato, E.; Barquinha, P.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al <inf>2</inf> O <inf>3</inf> interface

Materials Research Express
2016 | Journal article
EID:

2-s2.0-84965078708

Contributors: Deuermeier, J.; Bayer, T.J.M.; Yanagi, H.; Kiazadeh, A.; Martins, R.; Klein, A.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

ACS Applied Materials and Interfaces
2016 | Journal article
EID:

2-s2.0-84996964966

Contributors: Carlos, E.; Branquinho, R.; Kiazadeh, A.; Barquinha, P.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Solution-based IGZO nanoparticles memristor

Thesis-University of Nova de Lisboa
2016-12-18 | Dissertation or Thesis
Source: Self-asserted source
Asal Kiazadeh

TCAD simulation of short-channel effects in IGZO TFTs

Encontro Ciência 2016
2016-06-04 | Conference poster
SOURCE-WORK-ID:

cv-prod-id-4205216

Contributors: Martins, Jorge; Ganga Bahubalindruni; Allegra Sacchetti; Rovisco, Ana; Kiazadeh, Asal; Fortunato, Elvira; Martins, Rodrigo; Barquinha, Pedro; Bahubalindruni, Pydi Ganga
Source: check_circle
CIÊNCIAVITAE

FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs

E-MRS 2016 Spring Meeting, Lille, France, 2/05/16
2016-05 | Conference poster | Author
SOURCE-WORK-ID:

14c05376-8045-4ed1-bc5c-9f65ee056b44

Contributors: Emanuel Carlos; Rita Branquinho; Asal Kiazadeh; Pedro Barquinha; Rodrigo Martins; Elvira Fortunato
Source: check_circle
Universidade Nova de Lisboa
grade
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Operational stability of solution based zinc tin oxide/SiO&lt;inf&gt;2&lt;/inf&gt; thin film transistors under gate bias stress

APL Materials
2015 | Journal article
EID:

2-s2.0-84928798683

Contributors: Kiazadeh, A.; Salgueiro, D.; Branquinho, R.; Pinto, J.; Gomes, H.L.; Barquinha, P.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Towards environmental friendly solution-based ZTO/AlO <inf>x</inf> TFTs

Semiconductor Science and Technology
2015 | Journal article
EID:

2-s2.0-84921472053

Contributors: Branquinho, R.; Salgueiro, D.; Santa, A.; Kiazadeh, A.; Barquinha, P.; Pereira, L.; Martins, R.; Fortunato, E.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Advances in non-volatile memory and storage technology

2014 | Book | Author
SOURCE-WORK-ID:

2b5c7e53-09c3-43c9-8406-766eb559facc

Contributors: Asal Kiazadeh; H.L. Gomes
Source: check_circle
Universidade Nova de Lisboa
grade
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Fabrication and characterization of memory devices based on nanoparticles

2013 | Dissertation or Thesis
SOURCE-WORK-ID:

cv-prod-id-771641

OTHER-ID:

101301553

Contributors: Kiazadeh, Asal
Source: check_circle
CIÊNCIAVITAE

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Journal of Applied Physics
2013 | Journal article
EID:

2-s2.0-84880680055

Contributors: Rocha, P.R.F.; Kiazadeh, A.; De Leeuw, D.M.; Meskers, S.C.J.; Verbakel, F.; Taylor, D.M.; Gomes, H.L.
Source: Self-asserted source
Asal Kiazadeh via Scopus - Elsevier
grade
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Peer review (41 reviews for 23 publications/grants)

Review activity for ACS applied electronic materials. (1)
Review activity for ACS applied materials & interfaces. (2)
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Review activity for Advanced functional materials. (4)
Review activity for Advanced intelligent systems. (3)
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Review activity for Electronics. (2)
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Review activity for Semiconductor science and technology. (5)
Review activity for Small methods (1)
Review activity for Small. (3)