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Employment (1)

Nippon Telegraph and Telephone: Atsugi-shi, JP

(NTT Device Technology Labs)
Employment
Source: Self-asserted source
Hiroshi Hamada

Education and qualifications (1)

Tokyo Institute of Technology: Tokyo, JP

Education
Source: Self-asserted source
Hiroshi Hamada

Works (5)

220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technology Achieving 240-Gbps Dual-Band Data Transmission

IEEE Transactions on Microwave Theory and Techniques
2024-01 | Journal article
DOI: 10.1109/TMTT.2023.3327478
Contributors: Teruo Jyo; Hiroshi Hamada; Takuya Tsutsumi; Ibrahim Abdo; Satoshi Kawahara; Daisuke Kitayama; Munehiko Nagatani; Hiroyuki Takahashi
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Crossref

300-GHz-Band Four-Element CMOS-InP Hybrid Phased-Array Transmitter With 36circ Steering Range

IEEE Microwave and Wireless Technology Letters
2023-06 | Journal article
DOI: 10.1109/LMWT.2023.3267790
Contributors: Ibrahim Abdo; Teruo Jyo; Adam Pander; Hitoshi Wakita; Yuta Shiratori; Miwa Muto; Hiroshi Hamada; Munehiko Nagatani; Carrel da Gomez; Chun Wang et al.
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Crossref

Excitation of resonances in planar metamaterials at a two-layer dielectric interface for substrate integrated electronics

Physics Letters A
2021-09 | Journal article
DOI: 10.1016/j.physleta.2021.127523
Contributors: Adam Pander; Hiroshi Hamada; Hideyuki Nosaka
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Crossref

220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

IEEE Microwave and Wireless Components Letters
2021-06 | Journal article
DOI: 10.1109/LMWC.2021.3061662
Contributors: Hiroshi Hamada; Takuya Tsutsumi; Adam Pander; Hideaki Matsuzaki; Hiroki Sugiyama; Hiroyuki Takahashi; Hideyuki Nosaka
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Crossref

300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

IEEE Journal of Solid-State Circuits
2020-09 | Journal article
DOI: 10.1109/JSSC.2020.3005818
Contributors: Hiroshi Hamada; Takuya Tsutsumi; Hideaki Matsuzaki; Takuya Fujimura; Ibrahim Abdo; Atsushi Shirane; Kenichi Okada; Go Itami; Ho-Jin Song; Hiroki Sugiyama et al.
Source: check_circle
Crossref
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