Personal information

Activities

Employment (1)

Institute of High Performance Computing: Singapore, SG

Principal Scientist (Engineering Mechanics)
Employment
Source: Self-asserted source
Ramanarayan Hariharaputran

Education and qualifications (1)

Indian Institute of Science: Bangalore, Karnataka, IN

2003 | PhD (Materials Engineering)
Qualification
Source: Self-asserted source
Ramanarayan Hariharaputran

Works (26)

2D approximant lattice model: A framework for the simulation of amorphous film deposition

Computational Materials Science
2020 | Journal article
EID:

2-s2.0-85086890170

Part of ISSN: 09270256
Contributors: Kawai, H.; Lau, Y.H.; Hariharaputran, R.; Chirila, C.C.; Wu, G.; Srinivasan, B.M.; Wu, D.T.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

An all-atom kinetic Monte Carlo model for chemical vapor deposition growth of graphene on Cu(1 1 1) substrate

Journal of Physics Condensed Matter
2020 | Journal article
EID:

2-s2.0-85082242314

Part of ISSN: 1361648X 09538984
Contributors: Chen, S.; Gao, J.; Srinivasan, B.M.; Zhang, G.; Sorkin, V.; Hariharaputran, R.; Zhang, Y.-W.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

First-principles study of coadsorption of Cu<sup>2+</sup> and Cl<sup>-</sup> ions on the Cu (110) surface

RSC Advances
2020 | Journal article
EID:

2-s2.0-85081133020

Part of ISSN: 20462069
Contributors: Khoo, K.H.; Srinivasan, B.M.; Hariharaputran, R.; Joshi, C.A.; Tai-Yen, D.W.; Jin, H.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition

Carbon
2019 | Journal article
EID:

2-s2.0-85062146251

Part of ISSN: 00086223
Contributors: Chen, S.; Gao, J.; Srinivasan, B.M.; Zhang, G.; Sorkin, V.; Hariharaputran, R.; Zhang, Y.-W.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Defect-Free Electroplating of High Aspect Ratio Through Silicon Vias: Role of Size and Aspect Ratio

2019 International Wafer Level Packaging Conference, IWLPC 2019
2019 | Conference paper
EID:

2-s2.0-85076896127

Contributors: Joshi, C.A.; Ramanarayan, H.; Khoo, K.H.; Jin, H.; Quek, S.S.; Wu, D.T.; Sridhar, N.; Bharathi, M.S.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
2019 | Conference paper
EID:

2-s2.0-85067802968

Contributors: MingRui, L.; Hariharaputran, R.; Khoo, K.H.; Hongmei, J.; Wu, S.; Joshi, C.A.; Mangipudi, K.R.; Quek, S.S.; Wu, D.T.; Narayanaswamy, S. et al.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Origin of ultrafast growth of monolayer WSe<inf>2</inf> via chemical vapor deposition

npj Computational Materials
2019 | Journal article
EID:

2-s2.0-85062264693

Part of ISSN: 20573960
Contributors: Chen, S.; Gao, J.; Srinivasan, B.M.; Zhang, G.; Sorkin, V.; Hariharaputran, R.; Zhang, Y.-W.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Unveiling the competitive role of etching in graphene growth during chemical vapor deposition

2D Materials
2019 | Journal article
EID:

2-s2.0-85059228764

Part of ISSN: 20531583
Contributors: Chen, S.; Gao, J.; Srinivasan, B.M.; Zhang, G.; Sorkin, V.; Hariharaputran, R.; Zhang, Y.-W.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Atomistic insights into the nanosecond long amorphization and crystallization cycle of nanoscale G e2 S b2 T e5: An ab initio molecular dynamics study

Physical Review Materials
2018 | Journal article
EID:

2-s2.0-85054806766

Part of ISSN: 24759953
Contributors: Branicio, P.S.; Bai, K.; Ramanarayan, H.; Wu, D.T.; Sullivan, M.B.; Srolovitz, D.J.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Multiscale models for electroplating of through silicon vias

2018 International Wafer Level Packaging Conference, IWLPC 2018
2018 | Conference paper
EID:

2-s2.0-85060447218

Contributors: Khoo, K.H.; Mingrui, L.; Ramanarayan, H.; Hongmei, J.; Wu, S.; Joshi, C.A.; Mangipudi, K.R.; Cheng, J.J.; Quek, S.S.; Wu, D.T. et al.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

ACS Nano
2018 | Journal article
EID:

2-s2.0-85052882454

Part of ISSN: 1936086X 19360851
Contributors: Srinivasan, B.M.; Hao, Y.; Hariharaputran, R.; Rywkin, S.; Hone, J.C.; Colombo, L.; Ruoff, R.S.; Zhang, Y.-W.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

An experimental and theoretical investigation of the anisotropic branching in gold nanocrosses

Nanoscale
2016 | Journal article
EID:

2-s2.0-84952333328

Part of ISSN: 20403372 20403364
Contributors: Ye, E.; Regulacio, M.D.; Bharathi, M.S.; Pan, H.; Lin, M.; Bosman, M.; Win, K.Y.; Ramanarayan, H.; Zhang, S.-Y.; Loh, X.J. et al.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Continuous Shape Tuning of Nanotetrapods: Toward Shape-Mediated Self-Assembly

Chemistry of Materials
2016 | Journal article
EID:

2-s2.0-84959010546

Part of ISSN: 15205002 08974756
Contributors: Mishra, N.; Wu, W.-Y.; Srinivasan, B.M.; Hariharaputran, R.; Zhang, Y.-W.; Chan, Y.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Nanocrystallization in driven amorphous materials

Acta Materialia
2013 | Journal article
EID:

2-s2.0-84876146074

Part of ISSN: 13596454
Contributors: Shukla, S.; Wu, D.T.; Ramanarayan, H.; Srolovitz, D.; Ramanujan, R.V.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

PH-dependent evolution of five-star gold nanostructures: An experimental and computational study

ACS Nano
2013 | Journal article
EID:

2-s2.0-84875647936

Part of ISSN: 19360851 1936086X
Contributors: Wang, Z.; Bharathi, M.S.; Hariharaputran, R.; Xing, H.; Tang, L.; Li, J.; Zhang, Y.-W.; Lu, Y.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

The role of surface oxygen in the growth of large single-crystal graphene on copper

Science
2013 | Journal article
EID:

2-s2.0-84887320449

Part of ISSN: 10959203 00368075
Contributors: Hao, Y.; Bharathi, M.S.; Wang, L.; Liu, Y.; Chen, H.; Nie, S.; Wang, X.; Chou, H.; Tan, C.; Fallahazad, B. et al.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

The amorphization and crystallization of Ge<inf>2</inf>Sb2́Te <inf>5</inf>: An ab initio molecular dynamics study

Materials Research Society Symposium Proceedings
2012 | Conference paper
EID:

2-s2.0-84879273162

Part of ISSN: 02729172
Contributors: Branicio, P.S.; Bai, K.; Ramanarayan, H.; Wu, D.T.; Song, W.; Wang, W.; Li, M.; Zhao, R.; Shi, L.; Srolovitz, D.J.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Anisotropic growth of titania onto various gold nanostructures: Synthesis, theoretical understanding, and optimization for catalysis

Angewandte Chemie - International Edition
2011 | Journal article
EID:

2-s2.0-80054016823

Part of ISSN: 14337851 15213773
Contributors: Seh, Z.W.; Liu, S.; Zhang, S.-Y.; Bharathi, M.S.; Ramanarayan, H.; Low, M.; Shah, K.W.; Zhang, Y.-W.; Han, M.-Y.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Pattern formation and nonlinear evolution in alloy surfaces by ion-beam sputtering

Applied Physics Letters
2011 | Journal article
EID:

2-s2.0-80052404648

Part of ISSN: 00036951
Contributors: Bharathi, M.S.; Ramanarayan, H.; Zhang, Y.W.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Optimizing the computational efficiency of surface tension estimates in molecular dynamics simulations

Computational Materials Science
2010 | Journal article
EID:

2-s2.0-77955414702

Part of ISSN: 09270256
Contributors: Rutkevych, P.P.; Ramanarayan, H.; Wu, D.T.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Microstructural evolution of strained heteroepitaxial multilayers

Applied Physics Letters
2008 | Journal article
EID:

2-s2.0-43049087741

Part of ISSN: 00036951
Contributors: Ramanarayan, H.; Medhekar, N.V.; Shenoy, V.B.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Grain boundary effects on spinodal decomposition: II. Discontinuous microstructures

Acta Materialia
2004 | Journal article
EID:

2-s2.0-0742289997

Part of ISSN: 13596454
Contributors: Ramanarayan, H.; Abinandanan, T.A.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Influence of step-edge barriers on the morphological relaxation of nanoscale ripples on crystal surfaces

Physical Review Letters
2004 | Journal article
EID:

2-s2.0-3442884190

Part of ISSN: 00319007
Contributors: Shenoy, V.B.; Ramasubramaniam, A.; Ramanarayan, H.; Tarabe, D.T.; Chan, W.-L.; Chason, E.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Phase field study of grain boundary effects on spinodal decomposition

Acta Materialia
2003 | Journal article
EID:

2-s2.0-0041508531

Part of ISSN: 13596454
Contributors: Ramanarayan, H.; Abinandanan, T.A.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Spinodal decomposition in fine grained materials

Bulletin of Materials Science
2003 | Journal article
EID:

2-s2.0-0037289349

Part of ISSN: 02504707
Contributors: Ramanarayan, H.; Abinandanan, T.A.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Spinodal decomposition in polycrystalline alloys

Physica A: Statistical Mechanics and its Applications
2003 | Journal article
EID:

2-s2.0-0037303252

Part of ISSN: 03784371
Contributors: Ramanarayan, H.; Abinandanan, T.A.
Source: Self-asserted source
Ramanarayan Hariharaputran via Scopus - Elsevier

Peer review (5 reviews for 1 publication/grant)

Review activity for Journal of applied physics. (5)