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Works (6)

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Japanese Journal of Applied Physics
2024-06-03 | Journal article
DOI: 10.35848/1347-4065/ad5480
Contributors: Alessandro Floriduz; Uiho Choi; Elison Matioli
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Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam

Applied Physics Letters
2023-02-27 | Journal article
DOI: 10.1063/5.0122697
Contributors: Uiho Choi; Sung Tae Yoo; Minho Kim; Byeongchan So; Changheon Cheon; Mino Yang; Moonsang Lee; Kyu Chang Park; Okhyun Nam
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Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method

AIP Advances
2021-04-01 | Journal article
DOI: 10.1063/5.0042631
Contributors: Byeongchan So; Junchae Lee; Changheon Cheon; Joohyung Lee; Uiho Choi; Minho Kim; Jindong Song; Joonyeon Chang; Okhyun Nam
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Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer

Thin Solid Films
2020-08 | Journal article
DOI: 10.1016/j.tsf.2020.138103
Contributors: Byeongchan So; Changheon Cheon; Joohyoung Lee; Junchae Lee; Taemyung Kwak; Uiho Choi; JinDong Song; Joonyeon Chang; Okhyun Nam
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Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Japanese Journal of Applied Physics
2019-12-01 | Journal article
DOI: 10.7567/1347-4065/ab4df3
Contributors: Uiho Choi; Kyeongjae Lee; Taemyung Kwak; Donghyeop Jung; Taehoon Jang; Yongjun Nam; Byeongchan So; Hyun-Seop Kim; Ho-Young Cha; Myoung-Jin Kang et al.
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Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition

Thin Solid Films
2019-04 | Journal article
DOI: 10.1016/j.tsf.2019.01.049
Contributors: Uiho Choi; Kyeongjae Lee; Jaeyeon Han; Taehoon Jang; Yongjun Nam; Byeongchan So; Taemyung Kwak; Okhyun Nam
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