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Works (6)

Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer

IEEE Electron Device Letters
2024-03 | Journal article
DOI: 10.1109/LED.2024.3352046
Contributors: Hanwool Lee; Hojoon Ryu; Junzhe Kang; Wenjuan Zhu
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High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates

IEEE Journal of the Electron Devices Society
2023 | Journal article
DOI: 10.1109/JEDS.2023.3253137
Contributors: Hanwool Lee; Hojoon Ryu; Junzhe Kang; Wenjuan Zhu
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Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation

Applied Physics Letters
2023-03-13 | Journal article
DOI: 10.1063/5.0134475
Contributors: Hanwool Lee; Hojoon Ryu; Wenjuan Zhu
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Nonconventional Analog Comparators Based on Graphene and Ferroelectric Hafnium Zirconium Oxide

IEEE Transactions on Electron Devices
2021-03 | Journal article
DOI: 10.1109/TED.2021.3049757
Contributors: Jialun Liu; Hojoon Ryu; Wenjuan Zhu
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Empowering 2D nanoelectronics via ferroelectricity

Applied Physics Letters
2020-08-24 | Journal article
DOI: 10.1063/5.0019555
Contributors: Hojoon Ryu; Kai Xu; Dawei Li; Xia Hong; Wenjuan Zhu
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Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide

IEEE Transactions on Electron Devices
2019-05 | Journal article
DOI: 10.1109/TED.2019.2907070
Contributors: Hojoon Ryu; Kai Xu; Jinhong Kim; Sangmin Kang; Ji Guo; Wenjuan Zhu
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