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Employment (1)

Institute of Microelectronics Chinese Academy of Sciences: Beijing, CN

2011 to present
Employment
Source: Self-asserted source
jianhui bu

Education and qualifications (2)

Institute of Microelectronics Chinese Academy of Sciences: Beijing, CN

2006 to 2011
Qualification
Source: Self-asserted source
jianhui bu

Xi'an Jiaotong University: Xi'an, Shaanxi, CN

2002 to 2006
Education
Source: Self-asserted source
jianhui bu

Professional activities (1)

IEEE: New York, NY, US

Membership
Source: Self-asserted source
jianhui bu

Works (12)

Electrostatic Discharge and Failure Model of Carbon Nanotube Field-Effect Transistors

IEEE Transactions on Electron Devices
2025 | Journal article
DOI: 10.1109/TED.2025.3545011
Contributors: Yachi Duan; Can Yang; Dong Zhang; Yuepeng Gao; Yichao Sun; Jia Si; Peng Lu; Xiaojing Li; Jianhui Bu; Bo Li
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Crossref

Modeling Single Event Transient in 28nm FDSOI MOSFETs Using a Neural Network Approach

2024-12-05 | Preprint
DOI: 10.22541/au.173340573.30848752/v1
Contributors: Jiaxin Chen; Ting Xu; Xinyi Zhang; Bo Li; Lei Wang; Jianhui Bu
Source: check_circle
Crossref

A Comprehensive Threshold Voltage Model for Si-Based MOSFETs from Room to Cryogenic Temperatures

2024-11-12 | Preprint
DOI: 10.22541/au.173138964.44453779/v1
Contributors: Yijie Zhang; Xinyi Zhang; Guohe Zhang; Daofeng Zhang; Bo Li; Lei Wang; Jianhui Bu
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Crossref

Erratum: Assessment of 180 nm double SOI technology for analog front-end design with back-gate voltage

Journal of Instrumentation
2024-10-01 | Journal article
DOI: 10.1088/1748-0221/19/10/E10001
Contributors: Y. Li; F. Liu; B. Lu; Z. Li; S. Chen; C. Zhang; H. Zhu; X. Yao; J. Bu; J. Wan et al.
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Crossref

Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits

IEEE Transactions on Device and Materials Reliability
2024-03 | Journal article
DOI: 10.1109/TDMR.2023.3344767
Contributors: Xin Liu; Jiaxin Chen; Yinyu Liu; Ke Gu; Siqi Wang; Jianhui Bu; Quanfeng Zhou
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Crossref

Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State

IEEE Transactions on Electron Devices
2024-02 | Journal article
DOI: 10.1109/TED.2023.3342108
Contributors: Xinyi Zhang; Zhicheng Wu; Jianhui Bu; Bo Li; Zhengsheng Han
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Crossref

Analysis of Thermal Resistance Considering Self-Heating Effects and Ambient Temperature Coupling for Double-SOI MOSFETs

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3308085
Contributors: Qian Xing; Yali Su; Jianhui Bu; Guohe Zhang
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Crossref

Investigation of Transient Two-Stage Thermal Equivalent RC Network of SOI-MOSFETs Using Nano Double-Pulse Measurement

IEEE Transactions on Electron Devices
2022-10 | Journal article
DOI: 10.1109/TED.2022.3201439
Contributors: Yifan Li; Tao Ni; Juanjuan Wang; Linchun Gao; Xiaojing Li; Jiangjiang Li; Jianhui Bu; Duoli Li; Lida Xu; Runjian Wang et al.
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Crossref

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

IEEE Transactions on Electron Devices
2022-08 | Journal article
DOI: 10.1109/TED.2022.3183556
Contributors: Qian Xing; Yali Su; Junhua Lai; Bo Li; Binghong Li; Jianhui Bu; Guohe Zhang
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Crossref

A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET

IEEE Transactions on Electron Devices
2021-11 | Journal article
DOI: 10.1109/TED.2021.3083602
Contributors: Weizhuo Gan; Kun Luo; Guodong Qi; Raphael J. Prentki; Fei Liu; Jiali Huo; Weixing Huang; Jianhui Bu; Qingzhu Zhang; Huaxiang Yin et al.
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Crossref

Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect Transistors

IEEE Transactions on Electron Devices
2020-10 | Journal article
DOI: 10.1109/TED.2020.3014557
Contributors: Junhua Lai; Yali Su; Jianhui Bu; Binhong Li; Bo Li; Guohe Zhang
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Crossref

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

IEEE Transactions on Electron Devices
2020-06 | Journal article
DOI: 10.1109/TED.2020.2988855
Contributors: Weizhuo Gan; Raphael J. Prentki; Fei Liu; Jianhui Bu; Kun Luo; Qingzhu Zhang; Huilong Zhu; Wenwu Wang; Tianchun Ye; Huaxiang Yin et al.
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Crossref
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