Personal information

Verified email addresses

Verified email domains

ammonia molecular-beam epitaxy, AlGaN, GaN, AlN, AlGaN/GaN-HEMT, 2DEG, RHEED
Russia

Activities

Employment (1)

Institut fiziki poluprovodnikov imeni A V Rzanova SO RAN: Novosibirsk, Novosibirskaja, RU

junior research fellow (Department of Physics and Engineering of Semiconductor Structures)
Employment
Source: Self-asserted source
Denis Milakhin

Works (17)

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Journal of Crystal Growth
2022 | Journal article
Contributors: Malin, Timur; Milakhin, Denis; Mansurov, Vladimir; Vdovin, Vladimir; Kozhukhov, Anton; Loshkarev, Ivan; Aleksandrov, Ivan; Protasov, Dmitry; Zhuravlev, Konstantin
Source: check_circle
Web of Science Researcher Profile Sync

Evolution of the atomic and electronic structures during nitridation of the Si(111) surface under ammonia flux

Applied Surface Science
2022 | Journal article
Contributors: Mansurov, Vladimir; Galitsyn, Yury; Malin, Timur; Teys, Sergey; Milakhin, Denis; Zhuravlev, Konstantin
Source: check_circle
Web of Science Researcher Profile Sync

Mg<inf>3</inf>N<inf>2</inf> nanocrystallites formation during the GaN:Mg layers growth by the NH<inf>3</inf>-MBE technique

Journal of Crystal Growth
2021 | Journal article
EID:

2-s2.0-85096659797

Part of ISBN:

00220248

Contributors: Malin, T.V.; Mansurov, V.G.; Galitsyn, Y.G.; Milakhin, D.S.; Protasov, D.Y.; Ber, B.Y.; Kazantsev, D.Y.; Ratnikov, V.V.; Shcheglov, M.P.; Smirnov, A.N. et al.
Source: Self-asserted source
Denis Milakhin via Scopus - Elsevier
grade
Preferred source (of 2)‎

Donor-acceptor nature of orange photoluminescence in AlN

Semiconductor Science and Technology
2020 | Journal article
EID:

2-s2.0-85094963243

Part of ISBN:

13616641 02681242

Contributors: Aleksandrov, I.A.; Malin, T.V.; Milakhin, D.S.; Ber, B.Y.; Kazantsev, D.Y.; Zhuravlev, K.S.
Source: Self-asserted source
Denis Milakhin via Scopus - Elsevier
grade
Preferred source (of 2)‎

Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation

Optoelectronics, Instrumentation and Data Processing (English Translation of Avtometriya)
2020 | Journal article
Contributors: Malin, T., V; Milakhin, D. S.; Mansurov, V. G.; Kozhukhov, A. S.; Protasov, D. Yu; Loshkarev, I. D.; Zhuravlev, K. S.
Source: check_circle
Web of Science Researcher Profile Sync

Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1)

Applied Surface Science
2020 | Journal article
EID:

2-s2.0-85097081099

Part of ISBN:

01694332

Contributors: Milakhin, D.S.; Malin, T.V.; Mansurov, V.G.; Galitsyn, Y.G.; Kozhukhov, A.S.; Utkin, D.E.; Zhuravlev, K.S.
Source: Self-asserted source
Denis Milakhin via Scopus - Elsevier
grade
Preferred source (of 2)‎

Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Semiconductor Science and Technology
2020-07-01 | Journal article
Part of ISSN: 0268-1242
Part of ISSN: 1361-6641
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Optimal Stage Determination of Sapphire Nitridation Process Completion under High-Energy Electron Beam Influence

2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)
2020-06 | Conference paper
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Physicochemical Aspects of the Formation of AlN Crystal Film on the (0001)Al2O3 Surface

Chemistry for Sustainable Development
2019 | Journal article
Contributors: Mansurov, V. G.; Galitsyn, Yu G.; Mikhailov, Yu L.; Malin, T., V; Milakhin, D. S.; Zhuravlev, K. S.
Source: check_circle
Web of Science Researcher Profile Sync

Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

Physics of the Solid State
2019-12 | Journal article
Part of ISSN: 1063-7834
Part of ISSN: 1090-6460
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 2)‎

Growth of AlGaN:Si Heterostructures with Bragg Reflectors for the Blue-Green Spectral Range

Optoelectronics, Instrumentation and Data Processing
2019-09 | Journal article
Part of ISSN: 8756-6990
Part of ISSN: 1934-7944
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Technical Physics Letters
2019-08 | Journal article
Part of ISSN: 1063-7850
Part of ISSN: 1090-6533
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Electron‐Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface

physica status solidi (b)
2019-06 | Journal article
Part of ISSN: 0370-1972
Part of ISSN: 1521-3951
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Donor–acceptor pair emission via defects with strong electron–phonon coupling in heavily doped AlxGa1−xN:Si layers with Al contentx> 0.5

Japanese Journal of Applied Physics
2019-06-01 | Journal article
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Journal of Thermal Analysis and Calorimetry
2018-08 | Journal article
Part of ISSN: 1388-6150
Part of ISSN: 1588-2926
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Semiconductors
2018-06 | Journal article
Part of ISSN: 1063-7826
Part of ISSN: 1090-6479
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎

Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

Semiconductors
2015-07 | Journal article
Part of ISSN: 1063-7826
Part of ISSN: 1090-6479
Source: Self-asserted source
Denis Milakhin
grade
Preferred source (of 3)‎