Personal information

Keywords

Computational Materials Science, Condensed Matter Physics, Density Functional Theory

Activities

Collapse all

Employment (2)

IMEC: Leuven, BE

2022 to present | Computational Semiconductor Physics / Chemistry
Employment
Source: Self-asserted source
Christopher Pashartis

Imec: Leuven, BE

2018-10-01 to 2022-10-30 | PhD Candidate (Materials Modelling)
Employment
Source: Self-asserted source
Christopher Pashartis

Education and qualifications (2)

McMaster University: Hamilton, ON, CA

2015 to 2017 | M.ASc. (Materials Sciences and Engineering)
Education
Source: Self-asserted source
Christopher Pashartis

University of Waterloo: Waterloo, ON, CA

2010 to 2015 | B.Sc. in Mathematical Physics (coop) (Physics and Astronomy)
Education
Source: Self-asserted source
Christopher Pashartis

Works (8)

Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film

Applied Physics Letters
2025-01-13 | Journal article
DOI: 10.1063/5.0240392
Contributors: C. Pashartis; M. J. van Setten; G. Pourtois
Source: check_circle
Crossref

Computing elastic tensors of amorphous materials from first-principles

Computational Materials Science
2024-06 | Journal article
DOI: 10.1016/j.commatsci.2024.113042
Contributors: C. Pashartis; M.J. van Setten; M. Houssa; G. Pourtois
Source: check_circle
Crossref

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

Materials Advances
2022 | Journal article
DOI: 10.1039/D2MA00759B
Contributors: Michiel J. van Setten; Hendrik F. W. Dekkers; Christopher Pashartis; Adrian Chasin; Attilio Belmonte; Romain Delhougne; Gouri S. Kar; Geoffrey Pourtois
Source: check_circle
Crossref

On the elastic tensors of ultra-thin films: A study of ruthenium

Applied Surface Science
2022-08 | Journal article
DOI: 10.1016/j.apsusc.2022.153194
Contributors: C. Pashartis; M.J. van Setten; M. Houssa; G. Pourtois
Source: check_circle
Crossref

Strain and ferroelectricity in wurtzite Sc<sub>x</sub>Al<sub>1−</sub><sub>x</sub>N materials

Applied Physics Letters
2021-10-25 | Journal article
DOI: 10.1063/5.0072138
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Christopher Pashartis

Oxygen Defect Stability in Amorphous, <i>C</i>-Axis Aligned, and Spinel IGZO

ACS Applied Electronic Materials
2021-09-28 | Journal article
DOI: 10.1021/acsaelm.1c00553
Part of ISSN: 2637-6113
Part of ISSN: 2637-6113
Source: Self-asserted source
Christopher Pashartis

Alloying strategy for two-dimensional GaN optical emitters

Physical Review B
2017-10-27 | Journal article
DOI: 10.1103/physrevb.96.155209
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Source: Self-asserted source
Christopher Pashartis

Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study

Physical Review Applied
2017-06-12 | Journal article
DOI: 10.1103/physrevapplied.7.064011
Part of ISSN: 2331-7019
Source: Self-asserted source
Christopher Pashartis
How many people are using ORCID?