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Activities

Employment (1)

Wayne State University: Detroit, MI, US

2007-08-17 to present | Associate Professor (Physics and Astronomy )
Employment
Source: Self-asserted source
Zhixian Zhou

Education and qualifications (1)

Florida State University: Tallahassee, FL, US

1998-08-15 to 2004-12-20 | PhD (Physics and Astronomy )
Education
Source: Self-asserted source
Zhixian Zhou

Professional activities (1)

American Physical Society: College Park, MD, US

Membership
Source: Self-asserted source
Zhixian Zhou

Funding (5)

Pin down the mechanism of Fermi-level pinning in metal/2D-semiconductor contacts

2020-07-01 to 2023-06-30 | Grant
Directorate for Mathematical & Physical Sciences (Arlington, US)
GRANT_NUMBER: 2004445
Source: Self-asserted source
Zhixian Zhou via DimensionsWizard

MRI:Acquisition of an UV-Vis and X-ray Photoelectron Spectroscopy (UPS/XPS) for Research and Education in Electronics and Advanced Materials

2018-10-01 to 2020-09-30 | Grant
Directorate for Engineering (Arlington, US)
GRANT_NUMBER: 1849578
Source: Self-asserted source
Zhixian Zhou via DimensionsWizard

Integration of Graphene as a Work-Function-Tunable Electrode Material with Atomically Thin Layered Transition-Metal-Dichalcogenides

2013-07-01 to 2016-06-30 | Grant
Directorate for Mathematical & Physical Sciences (Arlington, US)
GRANT_NUMBER: 1308436
Source: Self-asserted source
Zhixian Zhou via DimensionsWizard

MRI: Acquisition of A Dual-Beam Focus Ion-Beam (FIB) System for Nanotechnology Biomedical and Energy Research

2012-09-15 to 2015-08-31 | Grant
Directorate for Engineering (Arlington, US)
GRANT_NUMBER: 1229635
Source: Self-asserted source
Zhixian Zhou via DimensionsWizard

Correlate transport properties with edge structure in suspended graphene nanoribbon field effect transistors

2011-09-01 to 2015-08-31 | Grant
Directorate for Engineering (Arlington, US)
GRANT_NUMBER: 1128297
Source: Self-asserted source
Zhixian Zhou via DimensionsWizard

Works (50 of 63)

Items per page:
Page 1 of 2

Ultrasensitive and Selective Bacteria Sensors Based on Functionalized Graphene Transistors

IEEE Sensors Journal
2022-03-15 | Journal article
Contributors: Xuebin Tan; Minye Yang; Liang Zhu; Gayathri Gunathilaka; Zhixian Zhou; Pai-Yen Chen; Yifan Zhang; Mark Ming-Cheng Cheng
Source: check_circle
Crossref

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

ACS Applied Nano Materials
2021-05-28 | Journal article
Contributors: Kraig Andrews; Upendra Rijal; Arthur Bowman; Hsun-Jen Chuang; Michael R. Koehler; Jiaqiang Yan; David G. Mandrus; Pai-Yen Chen; Zhixian Zhou
Source: check_circle
Crossref

Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

ACS Applied Materials & Interfaces
2021-03-03 | Journal article
Contributors: Lily J. Stanley; Hsun-Jen Chuang; Zhixian Zhou; Michael R. Koehler; Jiaqiang Yan; David G. Mandrus; Dragana Popović
Source: check_circle
Crossref

Ultrafast Photocurrent Response and High Detectivity in Two-Dimensional MoSe2-based Heterojunctions

ACS Applied Materials & Interfaces
2020-10-14 | Journal article
Contributors: Christian D. Ornelas; Arthur Bowman; Thayer S. Walmsley; Tianjiao Wang; Kraig Andrews; Zhixian Zhou; Ya-Qiong Xu
Source: check_circle
Crossref

Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer

ACS Nano
2020-05-26 | Journal article
Contributors: Kraig Andrews; Arthur Bowman; Upendra Rijal; Pai-Yen Chen; Zhixian Zhou
Source: check_circle
Crossref

Near-infrared optical transitions in PdSe2 phototransistors

Nanoscale
2019 | Journal article
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Zhixian Zhou

Reversible photo-induced doping in WSe2 field effect transistors

Nanoscale
2019 | Journal article
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Zhixian Zhou

Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors

ACS Nano
2019-05-28 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Zhixian Zhou

Gate‐Tunable Photoresponse Time in Black Phosphorus–MoS 2 Heterojunctions

Advanced Optical Materials
2019-03 | Journal article
Part of ISSN: 2195-1071
Part of ISSN: 2195-1071
Source: Self-asserted source
Zhixian Zhou

High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts

Nano Letters
2018-05-09 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Source: Self-asserted source
Zhixian Zhou

Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors

ACS Nano
2017-10-24 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Zhixian Zhou

Optimization of Electrochemical Performance of LiFePO4/C by Indium Doping and High Temperature Annealing

Inorganics
2017-10-10 | Journal article
Part of ISSN: 2304-6740
Source: Self-asserted source
Zhixian Zhou
grade
Preferred source (of 2)‎

Two-Dimensional Electronics and Optoelectronics: Present and Future

Electronics
2017-07-22 | Journal article
Part of ISSN: 2079-9292
Source: Self-asserted source
Zhixian Zhou

Thermally oxidized 2D TaS 2 as a high- κ gate dielectric for MoS 2 field-effect transistors

2D Materials
2017-06-22 | Journal article
Part of ISSN: 2053-1583
Source: Self-asserted source
Zhixian Zhou

Toward individually tunable compound eyes with transparent graphene electrode

Bioinspiration & Biomimetics
2017-06-08 | Journal article
Part of ISSN: 1748-3190
Source: Self-asserted source
Zhixian Zhou

Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment

ACS Nano
2017-04-25 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Zhixian Zhou

Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling

Physical Review Applied
2017-03-22 | Journal article
Part of ISSN: 2331-7019
Source: Self-asserted source
Zhixian Zhou

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal–Insulator Electronics

ACS Applied Materials & Interfaces
2016-12-21 | Journal article
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Source: Self-asserted source
Zhixian Zhou

Electromagnetic Shielding Effectiveness of a Hybrid Carbon Nanotube/Glass Fiber Reinforced Polymer Composite

Journal of Engineering Materials and Technology
2016-10-01 | Journal article
Part of ISSN: 0094-4289
Part of ISSN: 1528-8889
Source: Self-asserted source
Zhixian Zhou

Visualizing Light Scattering in Silicon Waveguides with Black Phosphorus Photodetectors

Advanced Materials
2016-09 | Journal article
Part of ISSN: 0935-9648
Source: Self-asserted source
Zhixian Zhou

Enhanced electrochemical performance of LiFePO4/C nanocomposites due to in situ formation of Fe2P impurities

Journal of Solid State Electrochemistry
2016-08 | Journal article
Part of ISSN: 1432-8488
Part of ISSN: 1433-0768
Source: Self-asserted source
Zhixian Zhou

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Nano Letters
2016-03-09 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Source: Self-asserted source
Zhixian Zhou

Versatile Miniature Tunable Liquid Lenses Using Transparent Graphene Electrodes

Langmuir
2016-02-16 | Journal article
Part of ISSN: 0743-7463
Part of ISSN: 1520-5827
Source: Self-asserted source
Zhixian Zhou

Anisotropic photocurrent response at black phosphorus–MoS2p–n heterojunctions

Nanoscale
2015 | Journal article
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Zhixian Zhou

Plasmonic Hot Electron Induced Photocurrent Response at MoS2–Metal Junctions

ACS Nano
2015-05-26 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Zhixian Zhou

Polarized photocurrent response in black phosphorus field-effect transistors

Nanoscale
2014 | Journal article
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Zhixian Zhou

The Mechanisms of Rectification in Au|Molecule|Au Devices Based on Langmuir-Blodgett Monolayers of Iron(III) and Copper(II) Surfactants

Angewandte Chemie International Edition
2014-12-22 | Journal article
Part of ISSN: 1433-7851
Source: Self-asserted source
Zhixian Zhou

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Nano Letters
2014-06-11 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Source: Self-asserted source
Zhixian Zhou

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

ACS Nano
2014-05-27 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Zhixian Zhou

Enhanced electrochemical performance of graphene modified LiFePO4 cathode material for lithium ion batteries

Solid State Ionics
2013-12 | Journal article
Part of ISSN: 0167-2738
Source: Self-asserted source
Zhixian Zhou

Edge Effects on the pH Response of Graphene Nanoribbon Field Effect Transistors

The Journal of Physical Chemistry C
2013-12-27 | Journal article
Part of ISSN: 1932-7447
Part of ISSN: 1932-7455
Source: Self-asserted source
Zhixian Zhou

Rectification in Nanoscale Devices Based on an Asymmetric Five-Coordinate Iron(III) Phenolate Complex

Angewandte Chemie International Edition
2013-12-09 | Journal article
Part of ISSN: 1433-7851
Source: Self-asserted source
Zhixian Zhou

Integration of Carbon Nanotubes Into a Fiberglass Reinforced Polymer Composite and its Effects on Electromagnetic Shielding and Mechanical Properties

Volume 9: Mechanics of Solids, Structures and Fluids
2013-11-15 | Conference paper
Source: Self-asserted source
Zhixian Zhou

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

ACS Nano
2013-05-28 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Source: Self-asserted source
Zhixian Zhou

Control and enhancement of graphene sensitivity by engineering edge defects

2012 IEEE Sensors
2012-10 | Conference paper
Part of ISBN: 9781457717659
Source: Self-asserted source
Zhixian Zhou

Electrowetting on dielectric experiments using graphene

Nanotechnology
2012-09-21 | Journal article
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Zhixian Zhou

Mobility enhancement and highly efficient gating of monolayer MoS2transistors with polymer electrolyte

Journal of Physics D: Applied Physics
2012-08-29 | Journal article
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Source: Self-asserted source
Zhixian Zhou

Nanostructured high specific capacity C-LiFePO4 cathode material for lithium-ion batteries

Journal of Materials Research
2012-01-28 | Journal article
Part of ISSN: 0884-2914
Part of ISSN: 2044-5326
Source: Self-asserted source
Zhixian Zhou

Carbon dioxide gas sensor using a graphene sheet

Sensors and Actuators B: Chemical
2011-09 | Journal article
Part of ISSN: 0925-4005
Source: Self-asserted source
Zhixian Zhou

Approaching the intrinsic band gap in suspended high-mobility graphene nanoribbons

Physical Review B
2011-09-06 | Journal article
Part of ISSN: 1098-0121
Part of ISSN: 1550-235X
Source: Self-asserted source
Zhixian Zhou

Electrical transport properties of graphene nanoribbons produced from sonicating graphite in solution

Nanotechnology
2011-08-12 | Journal article
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Zhixian Zhou

Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors

Nanotechnology
2011-07-01 | Journal article
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Zhixian Zhou

A flexible biocompatible graphene sensor for real-time monitoring of PH and protein

2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
2011-02 | Conference paper
Source: Self-asserted source
Zhixian Zhou

The performance ofin situgrown Schottky-barrier single wall carbon nanotube field-effect transistors

Nanotechnology
2009-02-25 | Journal article
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Zhixian Zhou

Magnetic properties of the Haldane-gap material [Ni(C2H8N2)2NO2](BF4)

New Journal of Physics
2008-03-06 | Journal article
Part of ISSN: 1367-2630
Source: Self-asserted source
Zhixian Zhou

Resistance and current-voltage characteristics of individual superconductingNbSe2nanowires

Physical Review B
2007-09-18 | Journal article
Part of ISSN: 1098-0121
Part of ISSN: 1550-235X
Source: Self-asserted source
Zhixian Zhou

One-dimensional electron transport in Cu-tetracyanoquinodimethane organic nanowires

Applied Physics Letters
2007-05-07 | Journal article
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Zhixian Zhou

Epitaxial Ca2RuO4+δ thin films grown on (001) LaAlO3 by pulsed laser deposition

Thin Solid Films
2007-02 | Journal article
Part of ISSN: 0040-6090
Source: Self-asserted source
Zhixian Zhou
grade
Preferred source (of 2)‎

The effect of annealing on the electrical and thermal transport properties of macroscopic bundles of long multi-wall carbon nanotubes

Physica B: Condensed Matter
2007-01 | Journal article
Part of ISSN: 0921-4526
Source: Self-asserted source
Zhixian Zhou

Very high field magnetization and AC susceptibility of native horse spleen ferritin

Journal of Magnetism and Magnetic Materials
2007-01 | Journal article
Part of ISSN: 0304-8853
Source: Self-asserted source
Zhixian Zhou
Items per page:
Page 1 of 2

Peer review (66 reviews for 16 publications/grants)

Review activity for ACS applied electronic materials. (5)
Review activity for ACS applied materials & interfaces. (20)
Review activity for ACS applied nano materials. (2)
Review activity for ACS nano. (7)
Review activity for Advanced electronic materials (3)
Review activity for Advanced functional materials. (6)
Review activity for Advanced materials. (4)
Review activity for Chemistry of materials. (2)
Review activity for Journal of physical chemistry. (1)
Review activity for Nano letters. (6)
Review activity for Nature (1)
Review activity for Nature communications (3)
Review activity for Nature electronics. (2)
Review activity for NPG Asia materials. (1)
Review activity for Small methods (1)
Review activity for Small. (2)