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Works (2)

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Electronics
2024-02 | Journal article | Author
DOI: 10.3390/electronics13040729
Contributors: Haochen Wang; Kuangli Chen; Ning Yang; Jianggen Zhu; Enchuan Duan; Shuting Huang; Yishang Zhao; Bo Zhang; Qi Zhou
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Multidisciplinary Digital Publishing Institute

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Materials
2022-01 | Journal article | Author
DOI: 10.3390/ma15020654
Contributors: Shouyi Wang; Qi Zhou; Kuangli Chen; Pengxiang Bai; Jinghai Wang; Liyang Zhu; Chunhua Zhou; Wei Gao; bo zhang
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Multidisciplinary Digital Publishing Institute
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