Christophe Cardinaud (0000-0002-9753-8848)

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My scientific interests cover fundamental aspects and recurrent issues in plasma etching as well as process development. Area of expertise includes etching processes in fluorine-based and CH4-H2 plasmas, material and surface analyses (photoelectron spectroscopy, ellipsometry) as well as plasma diagnostics (mass and optical spectrometry, electrostatic probes). Past experience includes deep etching in Si, SiO2 and silica glass, etching of III-V materials for optoelectronics, etching of organosilicon low-κ materials for advanced interconnections. At present research topics concern etching of II-VI semiconductor materials as well as chalcogenide glasses for photonics, development of Cl2-based plasma processes and etching mechanisms at cryo-temperatures.

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CNRS Délégation Bretagne et Pays de Loire: Rennes, Bretagne, FR

1988-01 to present | Researcher (Institut des matériaux Jean Rouxel (IMN))

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Christophe Cardinaud

https://orcid.org/0000-0002-9753-8848

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Employment (2)

CNRS Délégation Bretagne et Pays de Loire: Rennes, Bretagne, FR

CNRS Délégation Bretagne et Pays de Loire: Rennes, Bretagne, FR

Education and qualifications (1)

Université Pierre et Marie Curie: Paris, Île-de-France, FR

Professional activities (2)

Société Française du Vide: Paris, FR

Société Française de Physique: Paris, FR

Works (50 of 123)

Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas

Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching

Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process

Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma

Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas

Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas

The role of physisorption in the cryogenic etching process of silicon

New CH4-N2 dry etch chemistry for poly(methyl methacrylate) removal without consuming polystyrene for lamellar copolymers application

Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection

Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment

Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors

Tailoring the chemistry and the nano-architecture of organic thin films using cold plasma processes

PMMA removal selectivity to polystyrene using dry etch approach

PMMA removal selectivity to PS using dry etch approach: Sub-10nm patterning application

Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies

PMMA REMOVAL SELECTIVITY TO PS USING DRY ETCH APPROACH FOR SUB-10NM NODE APPLICATIONS

Surface chemistry of InP ridge structures etched in Cl-2-based plasma analyzed with angular XPS

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Quantitative Auger Electron Spectroscopic Analysis of Hg1-x Cd (x) Te

Quantitative Auger Electron Spectroscopy Analysis of Hg1-x Cd (x) Te (vol 43, pg 1255, 2014)

X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl-2-based inductively coupled plasma

Characterization of Plasma Etching Process Damage in HgCdTe

H atom surface loss kinetics in pulsed inductively coupled plasmas

Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties

Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution

Plasma Etching of Poly(dimethylsiloxane): Roughness Formation, Mechanism, Control, and Application in the Fabrication of Microfluidic Structures

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

SiGe derivatization by spontaneous reduction of aryl diazonium salts

Effect of Cl-2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP

Ion energy distributions measured inside a high-voltage cathode in a BF3 pulsed dc plasma used for plasma doping: experiments and ab initio calculations

Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge

Modelling of fluorine based high density plasma for the etching of silica glasses

Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

HiPIMS Ion Energy Distribution Measurements in Reactive Mode

Influence of Cadmium Composition on CH4-H-2-Based Inductively Coupled Plasma Etching of Hg1-x Cd (x) Te

Roughening of porous SiCOH materials in fluorocarbon plasmas

Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe

Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process

Mechanisms of Oxygen Plasma Nanotexturing of Organic Polymer Surfaces: From Stable Super Hydrophilic to Super Hydrophobic Surfaces

41lanthanum-based dielectric films analyzed by spectroscopic ellipsometry, X-ray reflectometry and X-ray photoelectron spectroscopy

Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors

Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy

A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer

Biofluid transport on hydrophobic plasma-deposited fluorocarbon films

First developments for photonics integrated on plasma-polymer-HMDSO: Single-mode TE00-TM00 straight waveguides

High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms

Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD

Peer review (11 reviews for 4 publications/grants)