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Works (3)

Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow R<sub>ON,sp</sub>

Nanomaterials
2025-01 | Journal article | Author
DOI: 10.3390/nano15030172
Contributors: Feng Lin; Tuanzhuang Wu; Weidong Wang; Zhengxuan Wang; Yi Zhang; Sheng Li; Ran Ye; Long Zhang; Jiaxing Wei; Siyang Liu et al.
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Multidisciplinary Digital Publishing Institute

Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness

Electronics
2023-06 | Journal article | Author
DOI: 10.3390/electronics12112551
Contributors: liu hao; Jiaxing Wei; Zhaoxiang Wei; Siyang Liu; Longxing Shi
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Multidisciplinary Digital Publishing Institute

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Materials
2022-01 | Journal article | Author
DOI: 10.3390/ma15020457
Contributors: Zhaoxiang Wei; Hao Fu; Xiaowen Yan; Sheng Li; Long Zhang; Jiaxing Wei; Siyang Liu; Weifeng Sun; Weili Wu; Song Bai
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Multidisciplinary Digital Publishing Institute
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