Personal information

Nanotechnology, nanomaterials, hydrogen, decarbonisation, nanoelectronics
Japan

Activities

Employment (1)

Air Liquide: Yokosuka, Kanagawa, JP

2018-10-01 to present | Permanent researcher/Project Manager/Facilitator of Air Liquide's Open'air Program (collaborations between R&D and Industrial Merchant business line) for the North East Asia Pacific・South East Asia Clusters (Research and Development・Innovation Campus Tokyo)
Employment
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Education and qualifications (1)

Tokyo Institute of Technology: Meguro-ku, Tokyo, JP

2011-04-01 to 2014-03-31 | PhD in Engineering (Graduate School of Science and Engineering)
Education
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Professional activities (2)

Hydrogen Energy Systems Society (HESS) of Japan (: Tokyo, JP

2020 to present
Membership
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

The Japan Society of Applied Physics (JSAP): Tokyo, JP

2010 to present
Membership
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Funding (1)

Low temperature growth of Ge nanowires and their device application

2013-04 to 2014-03 | Grant
Marubun Research Promotion Foundation (Tokyo, JP)
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Works (16)

Superdense state of the monolayer hydrogen on adsorbent under liquefied temperature

International Journal of Hydrogen Energy
2023-01 | Journal article
Contributors: Hiroyuki Gi; Yuki Kashiwara; Yuki Itoh; Khushbu Sharma; Norio Ogita; Hiroki Miyaoka; Tomofumi Ogawa; Marolop Simanullang; Laurent Prost; Takayuki Ichikawa
Source: check_circle
Crossref

Nanomaterials for on-board solid-state hydrogen storage applications

International Journal of Hydrogen Energy
2022-08 | Journal article
Contributors: Marolop Simanullang; Laurent Prost
Source: check_circle
Crossref

Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors

Nanoscale Advances
2020 | Journal article
Part of ISSN: 2516-0230
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Effect of Anchoring Groups on Electron Transfer at Porphyrins‐TiO 2 Interfaces in Dye‐Sensitized Solar Cell Application

Macromolecular Symposia
2020-06 | Journal article
Part of ISSN: 1022-1360
Part of ISSN: 1521-3900
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Non-polar GaN thin films deposition on glass substrate at low temperatures by conventional RF sputtering

Thin Solid Films
2019-04 | Journal article
Part of ISSN: 0040-6090
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection

Photonics
2018-05-29 | Journal article
Contributors: Xiangying Deng; Marolop Simanullang; Yukio Kawano
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation

Japanese Journal of Applied Physics
2016 | Journal article
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Synthesis of Ge/Si core/shell nanowires with suppression of branch formation

Applied Physics Express
2016 | Journal article
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors

J. Mater. Chem. C
2016 | Journal article
Source: Self-asserted source
Marolop Dapot Krisman Simanullang
grade
Preferred source (of 2)‎

Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

2016 IEEE Silicon Nanoelectronics Workshop (SNW)
2016-06 | Conference paper
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

2015-07 | Journal article
Source: Self-asserted source
Marolop Dapot Krisman Simanullang

Surface passivation of germanium nanowires using Al2O 3 and HfO2 deposited via atomic layer deposition technique

2014 | Journal article
EID:

2-s2.0-84903306503

Contributors: Simanullang, M.; Usami, K.; Noguchi, T.; Surawijaya, A.; Kodera, T.; Kawano, Y.; Oda, S.
Source: Self-asserted source
Marolop Dapot Krisman Simanullang via Scopus - Elsevier

Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature

2013 | Journal article
EID:

2-s2.0-84885093412

Contributors: Simanullang, M.; Usami, K.; Kodera, T.; Kawano, Y.; Oda, S.
Source: Self-asserted source
Marolop Dapot Krisman Simanullang via Scopus - Elsevier

Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition

2012 | Conference paper
EID:

2-s2.0-84869050491

Contributors: Simanullang, M.; Seyhan, A.; Usami, K.; Kodera, T.; Kawano, Y.; Oda, S.
Source: Self-asserted source
Marolop Dapot Krisman Simanullang via Scopus - Elsevier

Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition

2011 | Journal article
EID:

2-s2.0-84856911235

Contributors: Simanullang, M.; Usami, K.; Kodera, T.; Uchida, K.; Oda, S.
Source: Self-asserted source
Marolop Dapot Krisman Simanullang via Scopus - Elsevier

Growth of narrow and straight germanium nanowires by vapor-liquid-solid chemical vapor deposition

2011 | Journal article
EID:

2-s2.0-80054923182

Contributors: Simanullang, M.; Usami, K.; Kodera, T.; Uchida, K.; Oda, S.
Source: Self-asserted source
Marolop Dapot Krisman Simanullang via Scopus - Elsevier

Peer review (7 reviews for 1 publication/grant)

Review activity for International journal of hydrogen energy. (7)