Personal information

Physics of semiconductors, Solar cells, Semiconductor devices
Algeria

Biography

Mebarka DAOUDI received doctorate ES Science in Energetic Physics from University of Bechar-Algeria in 2010 and is currently teaching physics in the same university at faculty of exact sciences, department of sciences of matter. She involves here students in semiconductor devices physics, solar cells, and organic semiconductors fields. Her professional interests focus on the simulation and modelisation of charge carrier transport in semiconductor (organic/inorganic) devices and Phytoremediation wastewater treatment. In addition, she serves as chief of PhD-LMD project titled ‘’solar energy and optoelectronic devices’’ at the university of Bechar-Algeria, and is a member and team-chief of laboratory semiconductor devices physics (LPDS-University of Bechar-Algeria).

Activities

Employment (1)

University of Bechar, Algeria.: Bechar, Bechar, DZ

2004-10-27 to present | Prof. (Science of Matter)
Employment
Source: Self-asserted source
Mebarka DAOUDI

Works (18)

Preface of the First International Conference on Physics of Semiconductor Devices, Renewable Energies, and Environment

2023-10-13 | Conference paper
Contributors: Mebarka Daoudi; Syham Kadri; Youcef Himri; Mohamed Bensafi; Abdelkarim Talhi
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Statement of Peer Review

2023-10-13 | Conference paper
Contributors: Mebarka Daoudi; Syham Kadri; Youcef Himri; Mohamed Bensafi; Abdelkarim Talhi
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Hydraulic Sizing for Watering Green Space Application in Bechar-Algeria

Urban Horticulture - Sustainable Gardening in Cities
2023-07-17 | Book chapter | Writing - review & editing
Contributors: Mebarka DAOUDI
Source: Self-asserted source
Mebarka DAOUDI

Monte Carlo simulation of electric conductivity for pure and doping fullerene (C60)

Physics Letters A
2019-06 | Journal article
Part of ISSN: 0375-9601
Source: Self-asserted source
Mebarka DAOUDI

Monte Carlo simulation of temperature effect on the electron mobility and diffusion coefficient in fullerene-C60 bulk organic semiconductor

Microelectronic Engineering
2017 | Journal article
EID:

2-s2.0-85029296639

Contributors: Berkai, Z.; Daoudi, M.; Mendil, N.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Simple dimensions effect on the mobility and diffusion coefficient of C60: Monte Carlo simulation

2017 8th International Renewable Energy Congress, IREC 2017
2017 | Conference paper
EID:

2-s2.0-85020245969

Contributors: Berkai, Z.; Daoudi, M.; Mendil, N.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Disorder effect on carrier mobility in Fullerene organic semiconductor

Journal of Physics: Conference Series
2015 | Journal article
EID:

2-s2.0-84952334204

Contributors: Mendil, N.; Daoudi, M.; Berkai, Z.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Interface trap density effect on efficiency of Fullerene organic Schottky diode

Proceedings of SPIE - The International Society for Optical Engineering
2015 | Conference paper
EID:

2-s2.0-84974602164

Contributors: Daoudi, M.; Mendil, N.; Berkai, Z.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Study of PEDOT: PSS and BCP thicknesses effect on InfPc/C<inf>60</inf> organic solar cell efficiency

Proceedings of SPIE - The International Society for Optical Engineering
2015 | Conference paper
EID:

2-s2.0-84974633042

Contributors: Mendil, N.; Daoudi, M.; Berkai, Z.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Theoretical Study of Fullerene (C60) Force Field at Room Temperature

Energy Procedia
2015 | Conference paper
EID:

2-s2.0-84948400738

Contributors: Berkai, Z.; Daoudi, M.; Mendil, N.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

The Monte Carlo method applied to study of one-dimensional electronic device (diode) based on Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te

Sensors and Transducers
2013 | Other
EID:

2-s2.0-84894463258

Contributors: Moughli, H.; Belghachi, A.; Daoudi, M.; Hasni, A.; Varani, L.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Hydrodynamic simulation of drift mobility in N-Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te

Defect and Diffusion Forum
2011 | Book
EID:

2-s2.0-79955849159

Contributors: Daoudi, M.; Belghachi, A.; Varani, L.; Palermo, C.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Monte Carlo simulation of the transport phenomena in degenerate Hg 0.8Cd 0.2Te

World Academy of Science, Engineering and Technology
2011 | Journal article
EID:

2-s2.0-79960828511

Contributors: Dahbi, N.; Daoudi, M.; Belghachi, A.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Quasi-ballistic transport in submicron Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te diodes: Hydrodynamic modeling

World Academy of Science, Engineering and Technology
2011 | Journal article
EID:

2-s2.0-79960813989

Contributors: Daoudi, M.; Belghachi, A.; Varani, L.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

UML modeling of transport phenomena in semiconductors using object-oriented approach

International Conference on Multimedia Computing and Systems -Proceedings
2011 | Conference paper
EID:

2-s2.0-79961228578

Contributors: Bouida, A.; Belghachi, A.; Daoudi, M.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Hydrodynamic modelling of electron transport in submicron Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te diodes

Journal of Physics: Conference Series
2009 | Journal article
EID:

2-s2.0-74049147763

Contributors: Daoudi, M.; Belghachi, A.; Palermo, C.; Marinchio, H.; Varani, L.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Hydrodynamic simulation of drift mobility in n-Hg<inf>0.8</inf>Cd <inf>0.2</inf>Te

Proceedings of the International Conference on Microelectronics, ICM
2009 | Conference paper
EID:

2-s2.0-77950335076

Contributors: Daoudi, M.; Belghachi, A.; Varani, L.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Hydrodynamic simulation of electron transport in n-type Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te

European Physical Journal B
2008 | Journal article
EID:

2-s2.0-41549153659

Contributors: Daoudi, M.; Belghachi, A.; Varani, L.; Palermo, C.
Source: Self-asserted source
Mebarka DAOUDI via Scopus - Elsevier

Peer review (12 reviews for 2 publications/grants)

Review activity for Journal of electronic materials. (8)
Review activity for Journal of electronic materials. (4)