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Scopus Author ID: 11838816600
ResearcherID: B-7540-2011

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United Kingdom

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Employment (3)

IQE Plc: Cardiff, Cardiff, GB

2020-08-01 to present | GaN Technology Manager (Technology)
Employment
Source: Self-asserted source
Hassan Hirshy

Compound Semiconductor Applications Catapult: Cardiff, GB

2018-10-01 to 2020-07-31 | Senior RF Engineer
Employment
Source: Self-asserted source
Hassan Hirshy

Cardiff University Cardiff School of Engineering: Cardiff, Cardiff, GB

2008-03-01 to 2018-09-30
Employment
Source: Self-asserted source
Hassan Hirshy

Education and qualifications (2)

Cardiff University School of Engineering: Cardiff, Cardiff, GB

2004-01 to 2008-06 | PhD
Education
Source: Self-asserted source
Hassan Hirshy

Northumbria University: Newcastle upon Tyne, Newcastle upon Tyne, GB

2002-09 to 2003-09 | MSc in Microelectronic and Communication Engineering (Engineering)
Education
Source: Self-asserted source
Hassan Hirshy

Works (25)

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons

Microscopy and Microanalysis
2024-04-29 | Journal article
DOI: 10.1093/mam/ozae028
Contributors: Maruf Sarkar; Francesca Adams; Sidra A Dar; Jordan Penn; Yihong Ji; Abhiram Gundimeda; Tongtong Zhu; Chaowang Liu; Hassan Hirshy; Fabien C P Massabuau et al.
Source: check_circle
Crossref

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

IEEE Transactions on Electron Devices
2022 | Journal article
DOI: 10.1109/ted.2021.3138841
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Hassan Hirshy
grade
Preferred source (of 2)‎

UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping

Applied Physics Letters
2021-04-19 | Journal article
DOI: 10.1063/5.0049797
Contributors: Markus Wohlfahrt; Michael J. Uren; Felix Kaess; Oleg Laboutin; Hassan Hirshy; Martin Kuball
Source: check_circle
Crossref

Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

IEEE Transactions on Microwave Theory and Techniques
2019-07 | Journal article
DOI: 10.1109/TMTT.2019.2916404
Contributors: Alexander Alt; Hassan Hirshy; Sheng Jiang; Kean Boon Lee; Michael A. Casbon; Peng Chen; Peter A. Houston; Paul J. Tasker; Jonathan Lees
Source: check_circle
Crossref

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

IEEE Transactions on Electron Devices
2019-04 | Journal article
DOI: 10.1109/TED.2019.2896156
Contributors: Hareesh Chandrasekar; Michael J. Uren; Michael A. Casbon; Hassan Hirshy; Abdalla Eblabla; Khaled Elgaid; James W. Pomeroy; Paul J. Tasker; Martin Kuball
Source: check_circle
Crossref

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

IEEE Electron Device Letters
2018 | Journal article
DOI: 10.1109/LED.2018.2864562
EID:

2-s2.0-85052576349
Contributors: Chandrasekar, H.; Uren, M.J.; Eblabla, A.; Hirshy, H.; Casbon, M.A.; Tasker, P.J.; Elgaid, K.; Kuball, M.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier
grade
Preferred source (of 2)‎

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

IEEE Transactions on Electron Devices
2018-12 | Journal article
DOI: 10.1109/TED.2018.2872513
Contributors: Hassan Hirshy; Manikant Singh; Michael A. Casbon; Richard M. Perks; Michael J. Uren; Trevor Martin; Martin Kuball; Paul J. Tasker
Source: check_circle
Crossref
grade
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Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

Microelectronics Reliability
2017 | Journal article
DOI: 10.1016/j.microrel.2016.11.002
EID:

2-s2.0-85006791238
Contributors: Pooth, A.; Bergsten, J.; Rorsman, N.; Hirshy, H.; Perks, R.; Tasker, P.; Martin, T.; Webster, R.F.; Cherns, D.; Uren, M.J. et al.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier
grade
Preferred source (of 2)‎

Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography

Organic Electronics: physics, materials, applications
2015 | Journal article
DOI: 10.1016/j.orgel.2015.03.047
EID:

2-s2.0-84926218615
Contributors: Gold, H.; Haase, A.; Fian, A.; Prietl, C.; Striedinger, B.; Zanella, F.; Marjanović, N.; Ferrini, R.; Ring, J.; Lee, K.-D. et al.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier
grade
Preferred source (of 2)‎

Formation of ordered arrays of Si and GaAs nanostructures by single-shot laser irradiation in near-field at the solid/liquid interface

Materials Research Express
2014 | Journal article
DOI: 10.1088/2053-1591/1/1/015030
EID:

2-s2.0-84989311398
Contributors: Ulmeanu, M.; Petkov, P.; Hirshy, H.; Brousseau, E.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier
grade
Preferred source (of 2)‎

A novel texturing of micro injection moulding tools by applying an amorphous hydrogenated carbon coating

Surface and Coatings Technology
2013 | Journal article
DOI: 10.1016/j.surfcoat.2013.07.006
EID:

2-s2.0-84886252300
Contributors: Griffiths, C.A.; Dimov, S.S.; Rees, A.; Dellea, O.; Gavillet, J.; Lacan, F.; Hirshy, H.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier
grade
Preferred source (of 2)‎

Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Organic Electronics
2013 | Journal article
DOI: 10.1016/j.orgel.2013.07.035
WOSUID:

WOS:000325487000007
Contributors: Zanella, F.; Marjanovic, N.; Ferrini, R.; Gold, H.; Haase, A.; Fian, A.; Stadlober, B.; Muller, R.; Genoe, J.; Hirshy, H. et al.
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

2N period submicron grating at the inner wall of a metal cylinder

Microsystem Technologies
2013-10 | Journal article
DOI:

10.1007/s00542-013-1949-y
Source: Self-asserted source
Hassan Hirshy
grade
Preferred source (of 3)‎

Cavity Pressure Behaviour in Micro Injection Moulding

Proceedings of the 7th International Conference on Multi-Material Micro Manufacture (4m 2010)
2011 | Journal article
DOI: 10.3850/978-981-08-6555-9_164
WOSUID:

WOS:000394060400060
Contributors: Griffiths, C. A.; Dimov, S. S.; Scholz, S.; Hirshy, H.; Tosello, G.; Hansen, H. N.; Williams, E.
Source: Self-asserted source
Hassan Hirshy via ResearcherID

Master Tool Fabrication for the Replication of Micro and Nano Features

Proceedings of the 8th International Conference on Multi-Material Micro Manufacture (4m 2011)
2011 | Journal article
DOI: 10.3850/978-981-07-0319-6_215
WOSUID:

WOS:000307677000067
Contributors: Hirshy, H.; Lalev, G.; Velkova, V. L.; Popov, K.; Scholz, S.; Dimov, S. S.; Kuck, H; Reinecke, H; Dimov, S
Source: Self-asserted source
Hassan Hirshy via ResearcherID

Process chain for serial manufacture of 3D micro- and nano-scale structures

CIRP Journal of Manufacturing Science and Technology
2011 | Journal article
DOI: 10.1016/j.cirpj.2011.03.005
EID:

2-s2.0-82355161135
Contributors: Velkova, V.; Lalev, G.; Hirshy, H.; Omar, F.; Scholz, S.; Minev, E.; Dimov, S.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier
grade
Preferred source (of 2)‎

Process Factors Influence on Cavity Pressure Behavior in Microinjection Moulding

Journal of Manufacturing Science and Engineering-Transactions of the Asme
2011 | Journal article
DOI: 10.1115/1.4003953
WOSUID:

WOS:000292335200007
Contributors: Griffiths, C. A.; Dimov, S. S.; Scholz, S.; Hirshy, H.; Tosello, G.
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

Prototype tooling for producing small series of polymer microparts

Proceedings of the Institution of Mechanical Engineers Part B-Journal of Engineering Manufacture
2011 | Journal article
DOI: 10.1177/2041297510393799
WOSUID:

WOS:000298983200004
Contributors: Griffiths, C. A.; Dimov, S. S.; Hirshy, H.; Scholz, S.; Fischer, S.; Spitzbart, M.
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

Design and validation of a novel master-making process chain for organic and large area electronics on flexible substrates

Microelectronic Engineering
2010 | Journal article
DOI: 10.1016/j.mee.2010.01.015
WOSUID:

WOS:000281420900022
Contributors: Velkova, V; Lalev, G; Hirshy, H; Scholz, S; Hiitola-Keinanen, J; Gold, H; Haase, A; Hast, J; Stadlober, B; Dimov, S
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

Fabrication and validation of fused silica NIL templates incorporating different length scale features

Microelectronic Engineering
2009 | Journal article
DOI: 10.1016/j.mee.2009.01.074
WOSUID:

WOS:000267273300065
Contributors: Lalev, G; Petkov, P; Sykes, N; Hirshy, H; Velkova, V; Dimov, S; Barrow, D
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

FIB sputtering optimization using Ion Reverse Software

Microelectronic Engineering
2009 | Journal article
DOI: 10.1016/j.mee.2009.01.073
WOSUID:

WOS:000267273300024
Contributors: Svintsov, A; Zaitsev, S; Lalev, G; Dimov, S; Velkova, V; Hirshy, H
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

Novel process chain for fabrication of Ni shims

International Conferences on Multi-Material Micro Manufacture, 4M/International Conferences on Micro Manufacturing, ICOMM
2009 | Conference paper
DOI: 10.1243/17547164C0012009087
EID:

2-s2.0-82755192048
Contributors: Velkova, V.L.; Lalev, G.M.; Hirshy, H.; Scholz, S.G.; Dimov, S.S.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier

Process chain for replicating bio inspired micro structured surfaces

International Conferences on Multi-Material Micro Manufacture, 4M/International Conferences on Micro Manufacturing, ICOMM
2009 | Conference paper
DOI: 10.1243/17547164C0012009054
EID:

2-s2.0-82755191609
Contributors: Scholz, S.G.; Petkov, P.; Brousseau, E.B.; Griffiths, C.A.; Hirshy, H.; Dimov, S.S.
Source: Self-asserted source
Hassan Hirshy via Scopus - Elsevier

The nature of nitrogen related point defects in common forms of InN

Journal of Applied Physics
2007 | Journal article
DOI: 10.1063/1.2736654
WOSUID:

WOS:000247625700062
Contributors: Butcher, KSA; Fernandes, AJ; Chen, PPT; Wintrebert-Fouquet, M; Timmers, H; Shrestha, SK; Hirshy, H; Perks, RM; Usher, BF
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎

Stoichiometry effects and the Moss-Burstein effect for InN

Physica Status Solidi a-Applications and Materials Science
2006 | Journal article
DOI: 10.1002/pssa.200563504
WOSUID:

WOS:000234789600011
Contributors: Butcher, KSA; Hirshy, H; Perks, RM; Wintrebert-Fouquet, M; Chen, PPT
Source: Self-asserted source
Hassan Hirshy via ResearcherID
grade
Preferred source (of 2)‎
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