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ResearcherID: C-8216-2017
Scopus Author ID: 57192382838

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Education and qualifications (3)

University of California, Santa Barbara: CA, CA, US

2017-09 to present | PhD student (Electrical and Computer Engineering)
Education
Source: Self-asserted source
Wenjian Liu

Tsinghua University: Beijing, Beijing, CN

2015-09 to 2017-06 | Master (School of Material Science and Engineering)
Education
Source: Self-asserted source
Wenjian Liu

Tsinghua University: Beijing, Beijing, CN

2011-08 to 2015-06 | Bachelor (Department of Mechanical Engineering)
Education
Source: Self-asserted source
Wenjian Liu

Professional activities (1)

IEEE: SANTA BARBARA, California, US

2017-11 to present
Membership
Source: Self-asserted source
Wenjian Liu

Works (14)

Ru/N-polar GaN Schottky diode with less than 2 μA/cm2 reverse current

IEEE Electron Device Letters
2020 | Journal article
DOI: 10.1109/led.2020.3014524
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Wenjian Liu

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Journal of Applied Physics
2020-08-21 | Journal article
DOI: 10.1063/5.0012289
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Wenjian Liu

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage

2020 Device Research Conference (DRC)
2020-06 | Conference abstract
DOI: 10.1109/drc50226.2020.9135165
ISBN: 9781728170473
Source: Self-asserted source
Wenjian Liu

Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices

Semiconductor Science and Technology
2020-06-22 | Journal article
DOI: 10.1088/1361-6641/ab9ecb
Part of ISSN: 0268-1242
Part of ISSN: 1361-6641
Source: Self-asserted source
Wenjian Liu

Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD

Applied Physics Express
2020-06-01 | Journal article
DOI: 10.35848/1882-0786/ab93a3
Part of ISSN: 1882-0778
Part of ISSN: 1882-0786
Source: Self-asserted source
Wenjian Liu

An improved methodology for extracting interface state density at Si3N4/GaN

Applied Physics Letters
2020-01-13 | Journal article
DOI: 10.1063/1.5125645
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Wenjian Liu

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Applied Physics Letters
2019-10-21 | Journal article
DOI: 10.1063/1.5125788
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Wenjian Liu

Flatband voltage stability and time to failure of MOCVD-grown SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectrics on N-polar GaN

Applied Physics Express
2019-10-11 | Journal article
DOI: 10.7567/1882-0786/ab4d39
Part of ISSN: 1882-0778
Part of ISSN: 1882-0786
Source: Self-asserted source
Wenjian Liu

Amorphous magnetic semiconductors with Curie temperatures above room temperature

Journal of Semiconductors
2019-08 | Journal article
DOI: 10.1088/1674-4926/40/8/081510
Part of ISSN: 1674-4926
Part of ISSN: 2058-6140
Source: Self-asserted source
Wenjian Liu

Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

Applied Physics Letters
2019-07-15 | Journal article
DOI: 10.1063/1.5111148
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Wenjian Liu

Electric-field control of ferromagnetism in a Co-Fe-Ta-B amorphous alloy

Materials and Design
2018 | Journal article
DOI: 10.1016/j.matdes.2018.01.046
EID:

2-s2.0-85041477651
Contributors: Zhang, Y.; Zhao, S.; Song, C.; Liu, W.; Yao, K.; Chen, N.
Source: Self-asserted source
Wenjian Liu via Scopus - Elsevier

Metallic glass-strengthened thermoplastic elastomer composites

Physica E: Low-Dimensional Systems and Nanostructures
2017 | Journal article
DOI: 10.1016/j.physe.2017.02.020
EID:

2-s2.0-85015616460
Contributors: Liu, X.; Liu, H.; Wang, D.; Wang, E.; Liu, W.; Yao, K.; Chen, N.
Source: Self-asserted source
Wenjian Liu via Scopus - Elsevier

Transparent magnetic semiconductor with embedded metallic glass nano-granules

Materials and Design
2017 | Journal article
DOI: 10.1016/j.matdes.2017.07.010
EID:

2-s2.0-85022025720
Contributors: Chen, N.; Li, H.; Hirata, A.; Luo, Z.; Wang, Z.; Liu, W.; Cui, B.; Hitosugi, T.; Gu, L.; Zhang, X. et al.
Source: Self-asserted source
Wenjian Liu via Scopus - Elsevier
grade
Preferred source (of 2)‎

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Nature Communications
2016 | Journal article
DOI: 10.1038/ncomms13497
EID:

2-s2.0-85006049225
Contributors: Liu, W.; Zhang, H.; Shi, J.-A.; Wang, Z.; Song, C.; Wang, X.; Lu, S.; Zhou, X.; Gu, L.; Louzguine-Luzgin, D.V. et al.
Source: Self-asserted source
Wenjian Liu via Scopus - Elsevier
grade
Preferred source (of 2)‎

Peer review (21 reviews for 3 publications/grants)

Review activity for Applied physics letters. (9)
Review activity for Applied physics. (8)
Review activity for Journal of computational electronics. (4)
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