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Works (6)

Experimental Study of Heavy Ion Irradiation Hardness for p-GaN HEMTs Under Off-state with Negative Gate Voltage

IEEE Electron Device Letters
2025 | Journal article
Contributors: Xintong Xie; Shuxiang Sun; Jingyu Shen; Renkuan Liu; Gaoqiang Deng; Cheng Yang; Xin Zhou; Jie Wei; Bo Zhang; Xiaorong Luo
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Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
2024-09-16 | Journal article
Contributors: Juan Xiong; Xintong Xie; Jie Wei; Shuxiang Sun; Xiaorong Luo
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Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode

Microelectronics Journal
2024-02 | Journal article
Contributors: Xintong Xie; Shuxiang Sun; Zhijia Zhao; Pengfei Zhang; Jie Wei; Xin Zhou; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo
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Novel Double Channel Reverse Conducting GaN HEMT with an Integrated MOS-Channel Diode

Chinese Physics B
2023-06-28 | Journal article
Part of ISSN: 1674-1056
Contributors: Xintong Xie; Cheng Zhang; Zhijia Zhao; Jie Wei; Xiaorong Luo; Bo Zhang
Source: Self-asserted source
Xintong Xie

Improvement of single event effects in InP-based HEMT with a composite channel of InGaAs/InAs/InGaAs

Microelectronics Reliability
2023-05 | Journal article
Part of ISSN: 0026-2714
Contributors: Shuxiang Sun; Xintong Xie; Pengfei Zang; Xiaorong Luo
Source: Self-asserted source
Xintong Xie

A Novel IGBT With Voltage-Clamping for Turn-on Overshoot Suppression Under Hard-Switching

IEEE Transactions on Electron Devices
2021-10 | Journal article
Contributors: Gaoqiang Deng; Zhen Ma; Xiaorong Luo; Xintong Xie; Congcong Li; Wai Tung Ng
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