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Works (9)

Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors

Physical Review B
2025-03-05 | Journal article
DOI: 10.1103/PhysRevB.111.125301
Contributors: Kuan-Chu Chen; Clement Godfrin; George Simion; Imri Fattal; Julien Jussot; Stefan Kubicek; Sofie Beyne; Bart Raes; Arne Loenders; Kuo-Hsing Kao et al.
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Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

IEEE Transactions on Electron Devices
2024-08 | Journal article
DOI: 10.1109/TED.2024.3418934
Contributors: Y.-C. Chen; J.-P. Chou; K.-C. Chen; J.-Y. Lin; W. C.-Y. Ma; K.-H. Kao; M.-H. Chiang; Y.-H. Wang
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Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges

IEEE Journal of the Electron Devices Society
2022 | Journal article
DOI: 10.1109/JEDS.2022.3215771
Contributors: Kung-Chu Chen; Kuan-Wun Lin; Sung-Wei Huang; Jian-Yu Lin; Jenn-Gwo Hwu
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An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide

IEEE Transactions on Electron Devices
2022-04 | Journal article
DOI: 10.1109/TED.2022.3147747
Contributors: Kuan-Wun Lin; Kung-Chu Chen; Jenn-Gwo Hwu
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Fringing field induced current coupling in concentric metal–insulator–semiconductor (MIS) tunnel diodes with ultra-thin oxide

AIP Advances
2022-04-01 | Journal article
DOI: 10.1063/5.0081221
Contributors: Jen-Hao Chen; Kung-Chu Chen; Jenn-Gwo Hwu
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Schottky Barrier Height Modulation (SBHM) Induced Photon Current Gain in MIS(p) Tunnel Diodes for Low Operation Voltage

IEEE Sensors Journal
2022-02-15 | Journal article
DOI: 10.1109/JSEN.2022.3141409
Contributors: Kung-Chu Chen; Jenn-Gwo Hwu
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Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes

IEEE Access
2021 | Journal article
DOI: 10.1109/ACCESS.2021.3133575
Contributors: Kung-Chu Chen; Kuan-Wun Lin; Jenn-Gwo Hwu
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Energy-Saving Logic Gates Utilizing Coupling Phenomenon Between MIS(p) Tunneling Diodes

IEEE Transactions on Electron Devices
2021-12 | Journal article
DOI: 10.1109/TED.2021.3122414
Contributors: Jen Hao Chen; Kung Chu Chen; Jenn Gwo Hwu
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Coupling sensitivity in concentric metal–insulator–semiconductor tunnel diodes by controlling the lateral injection electrons

AIP Advances
2020-10-01 | Journal article
DOI: 10.1063/5.0022326
Part of ISSN: 2158-3226
Source: Self-asserted source
Kuan-Chu Chen
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