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Works (4)

Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

IEEE Transactions on Nuclear Science
2025 | Journal article
DOI: 10.1109/TNS.2025.3528186
Contributors: Aldo I. Vidana; Nathaniel A. Dodds; R. Nathan Nowlin; Phil J. Oldiges; Keshab R. Sapkota; Trace M. Wallace; Brian M. Dodd; Jenny Xiong; Jeffrey S. Kauppila; Lloyd W. Massengill et al.
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TID Response of IBM Gate-All-Around Stacked Nanosheet Transistors

IEEE Transactions on Nuclear Science
2025 | Journal article
DOI: 10.1109/TNS.2025.3545411
Contributors: Aldo I. Vidana; Nathaniel A. Dodds; Trace Wallace; Keshab R. Sapkota; R. Nathan Nowlin; Phil Oldiges; Christopher Nordquist; Drew J. Bingham; Reza Arghavani; Hugh J. Barnaby et al.
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The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology

IEEE Transactions on Nuclear Science
2024-04 | Journal article
DOI: 10.1109/TNS.2024.3359113
Contributors: Aldo I. Vidana; Nathaniel A. Dodds; R. Nathan Nowlin; Trace M. Wallace; Phil J. Oldiges; Brian M. Dodd; Jenny Xiong; Rick M. Cadena; James Trippe; Jeffrey S. Kauppila et al.
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Conductivity modulation in strained transition-metal-dichalcogenides via micro-electro-mechanical actuation

Semiconductor Science and Technology
2019-04-01 | Journal article
DOI: 10.1088/1361-6641/ab062d
Contributors: A Vidana; D Zubia; M Martinez; E Acosta; J Mireles, Jr; T-J King; S Almeida
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