Personal information

Semiconductor Device Physics, Gallium Nitride (GaN), High Electron Mobility Transistors (HEMTs)
India

Activities

Employment (1)

Reliance Industries Ltd Reliance Corporate Park Ghansoli: Ghansoli, Maharashtra, IN

2012-07-05 to 2013-02-05 | Engineer (Rancore)
Employment
Source: Self-asserted source
Bhanu B. Upadhyay

Education and qualifications (2)

Indian Institute of Technology Bombay: Mumbai, Maharashtra, IN

2014-07-17 to present | PhD (Electrical Engineering)
Education
Source: Self-asserted source
Bhanu B. Upadhyay

National Institute of Technology: Silchar, Assam, IN

2008-07-15 to 2012-06-30 | B.Tech (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Bhanu B. Upadhyay

Works (10)

Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions

IEEE Electron Device Letters
2021-05 | Journal article
Contributors: Bazila Parvez; Jaya Jha; Pankaj Upadhyay; Navneet Bhardwaj; Yogendra Yadav; Bhanu Upadhyay; Swaroop Ganguly; Dipankar Saha
Source: check_circle
Crossref

Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2020-10 | Journal article
Contributors: Yogendra K. Yadav; Bhanu B. Upadhyay; Jaya Jha; Swaroop Ganguly; Dipankar Saha
Source: check_circle
Crossref

Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Applied Surface Science
2019-07 | Journal article
Part of ISSN: 0169-4332
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs

IEEE Electron Device Letters
2018 | Journal article
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of Applied Physics
2018-10-28 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures

physica status solidi (a)
2018-05 | Journal article
Part of ISSN: 1862-6300
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures

Journal of Applied Physics
2018-05-28 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Solid-State Electronics
2018-03 | Journal article
Part of ISSN: 0038-1101
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors

Solid-State Electronics
2017-05 | Journal article
Part of ISSN: 0038-1101
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎

Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

Solid-State Electronics
2016-08 | Journal article
Part of ISSN: 0038-1101
Source: Self-asserted source
Bhanu B. Upadhyay
grade
Preferred source (of 2)‎