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Scopus Author ID: 8615959800

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Works (14)

Growth and efficiency of MAPbBr<sub>3</sub> based perovskite solar cells: insight from experimental and simulation

Indian Journal of Physics
2024 | Journal article
DOI: 10.1007/s12648-023-03065-4
EID:

2-s2.0-85183448231

Part of ISSN: 09749845 09731458
Contributors: Bouazizi, S.; Bouich, A.; Tlili, W.; Kadri, B.; Amlouk, M.; Omri, A.; Soucase, B.M.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Boosting the efficiency of an inverted structure halide perovskite solar cell: a numerical investigation

Physica Scripta
2024-09-01 | Journal article
DOI: 10.1088/1402-4896/ad69d6
Contributors: Wahiba Tlili; Sarra Bouazizi; Bassem Kadri; Amal Bouich; Rabeb Issaoui; Alia Ghrissi; Mosbah Amlouk; Ahmed Omri
Source: check_circle
Crossref
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Preferred source (of 2)‎

Methylammonium lead triiodide perovskite-based solar cells efficiency: Insight from experimental and simulation

Journal of Molecular Graphics and Modelling
2023 | Journal article
DOI: 10.1016/j.jmgm.2023.108458
EID:

2-s2.0-85151711979

Part of ISSN: 18734243 10933263
Contributors: Bouazizi, S.; Bouich, A.; Tlili, W.; Amlouk, M.; Omri, A.; Soucase, B.M.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Design and efficiency enhancement of FTO/PC<sub>60</sub>BM/CsSn<sub>0.5</sub>Ge<sub>0.5</sub>I<sub>3</sub>/Spiro-OMeTAD/Au perovskite solar cell utilizing SCAPS-1D Simulator

Materials Research Express
2022 | Journal article
DOI: 10.1088/2053-1591/ac8d52
EID:

2-s2.0-85137782612

Part of ISSN: 20531591
Contributors: Bouazizi, S.; Tlili, W.; Bouich, A.; Soucase, B.M.; Omri, A.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Improving silicon solar cell efficiency by using the impurity photovoltaic effect

Energy Procedia
2013 | Conference paper
DOI: 10.1016/j.egypro.2013.09.005
EID:

2-s2.0-84898750789

Part of ISSN: 18766102
Contributors: Azzouzi, G.; Tazibt, W.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

High carrier injection for all-silicon laser

EPJ Applied Physics
2012 | Journal article
DOI: 10.1051/epjap/2012110421
EID:

2-s2.0-84860242502

Part of ISSN: 12860042 12860050
Contributors: Toufik, H.; Tazibt, W.; Toufik, N.; El Tahchi, M.; Pélanchon, F.; Mialhe, P.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Physical Parameters for Reliability Evaluation

2011 | Journal article
URI:

https://doi.org/10.5281/zenodo.1058569
Contributors: Tazibt W. AND Mialhe P.
Source: Self-asserted source
0000-0003-1475-3559

A junction characterization for microelectronic devices quality and reliability

Microelectronics Reliability
2008 | Journal article
DOI: 10.1016/j.microrel.2007.06.002
EID:

2-s2.0-39649119690

Part of ISSN: 00262714
Contributors: Tazibt, W.; Mialhe, P.; Charles, J.P.; Belkhir, M.A.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION

The International Conference on Applied Mechanics and Mechanical Engineering
2008-05-01 | Journal article
DOI: 10.21608/amme.2008.39820
Part of ISSN: 2636-4360
Contributors: TAZBIT W.; MIALHE P.
Source: Self-asserted source
0000-0003-1475-3559
grade
Preferred source (of 2)‎

A faster power MOSFET device with electrical stress treatment

Microelectronics International
2005 | Journal article
DOI: 10.1108/13565360510592207
EID:

2-s2.0-18144386198

Part of ISSN: 13565362
Contributors: Salame, C.; Habchi, R.; Tazibt, W.; Khoury, A.; Mialhe, P.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Reliability of microelectronic devices from emitter-base junction characterisation

Modelling, Measurement and Control A
2005 | Journal article
EID:

2-s2.0-33745140173

Part of ISSN: 12595985
Contributors: Tazibt, W.; Toufik, N.; Salamé, C.; Mialhe, P.; Belkhir, M.A.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Creation of defect layer structure by hot carriers bombardment

Decision and Simulation in Engineering and Management Science - International Conference on Modelling and Simulation, ICMS'04
2004 | Conference paper
EID:

2-s2.0-21644445424

Part of ISBN: 8468878677
Contributors: Toufik, N.; Tazibt, W.; Mialhe, P.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

Transitor reliability from emitter-base junction characterisation

Decision and Simulation in Engineering and Management Science - International Conference on Modelling and Simulation, ICMS'04
2004 | Conference paper
EID:

2-s2.0-21644473615

Part of ISBN: 8468878677
Contributors: Tazibt, W.; Toufik, N.; Mialhe, P.; Belkhir, M.A.
Source: Self-asserted source
0000-0003-1475-3559 via Scopus - Elsevier

FONCTIONS D’ONDES SYMETRISEES POUR LE GROUPE D’ESPACE D53d DANS LA METHODE DES LIAISONS FORTES. APPLICATION A NiO DANS SA PHASE ANTIFERROMAGNETIQUE

Sciences &amp; Technology. A, exactes sciences
2003 | Journal article
URI:

https://revue.umc.edu.dz/a/article/view/1827
Contributors: BELKHIR, M A; TAZIBT, W; AKROUNE, N
Source: Self-asserted source
0000-0003-1475-3559

Peer review (2 reviews for 1 publication/grant)

Review activity for Journal of electronic materials. (2)
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