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Employment (3)

Kochi University of Technology: Kochi, JP

2011-01-01 to present | Professor
Employment
Source: Self-asserted source
Furuta Mamoru

Kochi University of Technology: Kochi, JP

2005-04-01 to 2010-12-31 | Associate Professor
Employment
Source: Self-asserted source
Furuta Mamoru

Panasonic (Japan): Kadoma, Ôsaka, JP

1988-04-01 to 2004-03-31
Employment
Source: Self-asserted source
Furuta Mamoru

Education and qualifications (3)

Nara Institute of Science and Technology: Ikoma, JP

2002-04-01 to 2003-03-31 | Ph. D (Material Science)
Education
Source: Self-asserted source
Furuta Mamoru

University of Electro-Communications: Tokyo, JP

1986-04-01 to 1988-03-31 | M.E.
Education
Source: Self-asserted source
Furuta Mamoru

University of Electro-Communications: Tokyo, JP

1984-04-01 to 1986-03-31 | B.E.
Education
Source: Self-asserted source
Furuta Mamoru

Works (50 of 68)

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Page 1 of 2

Uniformity and Reliability of Enhancement-mode Polycrystalline Indium Oxide Thin Film Transistors formed by Solid-phase Crystallization

IEEE Electron Device Letters
2024 | Journal article | Author
DOI: 10.1109/led.2024.3480991
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Contributors: Naoki Okamoto; Xiaoqian Wang; Kotaro Morita; Yuto Kato; Mir Mutakabbir Alom; Yusaku Magari; Furuta Mamoru
Source: Self-asserted source
Furuta Mamoru

Reliable Operation in High‐Mobility Indium Oxide Thin Film Transistors

Small Methods
2024-08-03 | Journal article | Author
DOI: 10.1002/smtd.202400578
Part of ISSN: 2366-9608
Part of ISSN: 2366-9608
Contributors: Prashant Ghediya; Yusaku Magari; Hikaru Sadahira; Takashi ENDO; Furuta Mamoru; Yuqiao Zhang; Yasutaka Matsuo; Hiromichi Ohta
Source: Self-asserted source
Furuta Mamoru

Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide

Japanese Journal of Applied Physics
2024-03-01 | Journal article | Author
DOI: 10.35848/1347-4065/ad21ba
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Contributors: Xiaoqian Wang; Yusaku Magari; Furuta Mamoru
Source: Self-asserted source
Furuta Mamoru

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

Nature Communications
2022-02-28 | Journal article
DOI: 10.1038/s41467-022-28480-9
Part of ISSN: 2041-1723
Contributors: Yusaku Magari; Taiki Kataoka; Wenchang Yeh; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Materials
2022-01 | Journal article | Author
DOI: 10.3390/ma15010334
Contributors: Rostislav Velichko; Yusaku Magari; Furuta Mamoru
Source: check_circle
Multidisciplinary Digital Publishing Institute

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Materials
2021-12 | Journal article | Author
DOI: 10.3390/ma15010187
Contributors: Taiki Kataoka; Yusaku Magari; Hisao Makino; Furuta Mamoru
Source: check_circle
Multidisciplinary Digital Publishing Institute

Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors

Nanomaterials
2020-09 | Journal article | Author
DOI: 10.3390/nano10091782
Contributors: Dapeng Wang; Furuta Mamoru; Shigekazu Tomai; Koki Yano
Source: check_circle
Multidisciplinary Digital Publishing Institute

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Materials
2020-04 | Journal article | Author
DOI: 10.3390/ma13081935
Contributors: Daichi Koretomo; Shuhei Hamada; Yusaku Magari; Furuta Mamoru
Source: check_circle
Multidisciplinary Digital Publishing Institute

Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

Nanomaterials
2020-03 | Journal article | Author
DOI: 10.3390/nano10040617
Contributors: Dapeng Wang; Furuta Mamoru; Shigekazu Tomai; Koki Yano
Source: check_circle
Multidisciplinary Digital Publishing Institute

Effect of Fluorine Diffusion on Amorphous-InGaZnO-Based Thin-Film Transistors

Journal of Nanoscience and Nanotechnology
2018-08-01 | Journal article
DOI: 10.1166/jnn.2018.15414
Part of ISSN: 1533-4880
Contributors: Jingxin Jiang; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

(Invited) Low-Temperature Processed InGaZnO MES-FET for Flexible Device Applications

ECS Transactions
2017-05-01 | Journal article
DOI: 10.1149/07901.0043ecst
Part of ISSN: 1938-6737
Contributors: Mamoru Furuta; Yusaku Magari; Shinsuke Hashimoto; Kenichiro Hamada
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Rare-metal-free high-performance Ga-Sn-O thin film transistor

Scientific Reports
2017-03 | Journal article
DOI: 10.1038/srep44326
Part of ISSN: 2045-2322
Contributors: Tokiyoshi Matsuda; Kenta Umeda; Yuta Kato; Daiki Nishimoto; Mamoru Furuta; Mutsumi Kimura
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Water-triggered macroscopic structural transformation of a metal–organic framework

CrystEngComm
2016 | Journal article
DOI: 10.1039/c6ce00031b
Part of ISSN: 1466-8033
Contributors: Masataka Ohtani; Kazutaka Takase; Pengyu Wang; Kouki Higashi; Kimiyoshi Ueno; Nobuhiro Yasuda; Kunihisa Sugimoto; Mamoru Furuta; Kazuya Kobiro
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Fabrication of Zinc Oxide Nanostructures by Mist Chemical Vapor Deposition

Transactions of the Materials Research Society of Japan
2014 | Journal article
DOI: 10.14723/tmrsj.39.161
Part of ISSN: 1382-3469
Contributors: Xin Li; Chaoyang Li; Toshiyuki Kawaharamura; Dapeng Wang; Noriko Nitta; Mamoru Furuta; Hiroshi Furuta; Akimitsu Hatta
Source: Self-asserted source
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Stacked organic photoconductive films and thin-film transistor circuits separated by thin silicon nitride for a color image sensor

IEEE SENSORS 2014 Proceedings
2014-11 | Conference paper
DOI: 10.1109/icsens.2014.6985342
Part of ISBN: 9781479901623
Contributors: Hokuto Seo; Toshikatsu Sakai; Hiroshi Ohtake; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition

Vacuum
2014-03 | Journal article
DOI: 10.1016/j.vacuum.2013.08.003
Part of ISSN: 0042-207X
Contributors: Tokiyoshi Matsuda; Mamoru Furuta; Takahiro Hiramatsu; Hiroshi Furuta; Toshiyuki Kawaharamura; Takashi Hirao
Source: Self-asserted source
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Influence of Substrates on Formation of Zinc Oxide Nanostructures by a Novel Reducing Annealing Method

Nanoscience and Nanotechnology Letters
2014-02-01 | Journal article
DOI: 10.1166/nnl.2014.1708
Part of ISSN: 1941-4900
Contributors: Xin Li; Chaoyang Li; Toshiyuki Kawaharamura; Dapeng Wang; Noriko Nitta; Mamoru Furuta; Hiroshi Furuta; Akimitsu Hatta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering

Journal of Materials
2013 | Journal article
DOI: 10.1155/2013/547271
Part of ISSN: 2314-4866
Contributors: Chaoyang Li; Dapeng Wang; Zeming Li; Xin Li; Toshiyuki Kawaharamura; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Enhancing carrier mobility of IGZO TFT fabricated by non-vacuum mist CVD with O3assistance

physica status solidi (c)
2013-10-07 | Journal article
DOI: 10.1002/pssc.201300247
Part of ISSN: 1862-6351
Contributors: Toshiyuki Kawaharamura; Takayuki Uchida; Dapeng Wang; Masaru Sanada; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Atmospheric pressure processed InGaZnO thin-film transistors

2013 IEEE International Meeting for Future of Electron Devices, Kansai
2013-06 | Conference paper
DOI: 10.1109/imfedk.2013.6602270
Part of ISBN: 9781467361071
Contributors: Mamoru Furuta; Toshiyuki Kawaharamura
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors

Japanese Journal of Applied Physics
2012-09 | Journal article
DOI: 10.1143/jjap.51.108003
Part of ISSN: 0021-4922
Contributors: Shin-ichi Shimakawa; Dapeng Wang; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

Japanese Journal of Applied Physics
2012-03 | Journal article
DOI: 10.1143/jjap.51.03ca01
Part of ISSN: 0021-4922
Contributors: Takashi Nishida; Kazushi Fuse; Mamoru Furuta; Yasuaki Ishikawa; Yukiharu Uraoka
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation

Japanese Journal of Applied Physics
2012-03 | Journal article
DOI: 10.1143/jjap.51.03cb04
Part of ISSN: 0021-4922
Contributors: Shin-ichi Shimakawa; Yudai Kamada; Toshiyuki Kawaharamura; Dapeng Wang; Chaoyang Li; Shizuo Fujita; Takashi Hirao; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Successful Growth of Conductive Highly Crystalline Sn-Doped $\alpha$-Ga$_{2}$O$_{3}$ Thin Films by Fine-Channel Mist Chemical Vapor Deposition

Japanese Journal of Applied Physics
2012-03 | Journal article
DOI: 10.1143/jjap.51.040207
Part of ISSN: 0021-4922
Contributors: Toshiyuki Kawaharamura; Giang T. Dang; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

Japanese Journal of Applied Physics
2012-03-01 | Journal article
DOI: 10.7567/jjap.51.03ca01
Part of ISSN: 0021-4922
Contributors: Takashi Nishida; Kazushi Fuse; Mamoru Furuta; Yasuaki Ishikawa; Yukiharu Uraoka
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Photo-Leakage Current of Thin-Film Transistors with ZnO Channels Formed at Various Oxygen Partial Pressures under Visible Light Irradiation

Japanese Journal of Applied Physics
2012-03-01 | Journal article
DOI: 10.7567/jjap.51.03cb04
Part of ISSN: 0021-4922
Contributors: Shin-ichi Shimakawa; Yudai Kamada; Toshiyuki Kawaharamura; Dapeng Wang; Chaoyang Li; Shizuo Fujita; Takashi Hirao; Mamoru Furuta
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Control of Swelling Height of Si Crystal by Irradiating Ar Beam

Journal of Nanoscience and Nanotechnology
2012-01-01 | Journal article
DOI: 10.1166/jnn.2012.5371
Part of ISSN: 1533-4880
Contributors: Sadao Momota; Jianguo Zhang; Takuya Toyonaga; Hikaru Terauchi; Kazuki Maeda; Jun Taniguchi; Takashi Hirao; Mamoru Furuta; Toshiyuki Kawaharamura
Source: Self-asserted source
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Well-arrayed ZnO nanostructures formed by multi-annealing processes at low temperature

physica status solidi (c)
2011 | Journal article
DOI: 10.1002/pssc.201100271
Part of ISSN: 1862-6351
Contributors: Dapeng Wang; Zeming Li; Toshiyuki Kawaharamura; Mamoru Furuta; Tadashi Narusawa; Chaoyang Li
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

ZnO Thin-Film Transistors with SiNx/SiOx Stacked Gate Insulators: Trap Densities and N2O Flow Rate Dependence

Electrochemical and Solid-State Letters
2011 | Journal article
DOI: 10.1149/1.3601058
Part of ISSN: 1099-0062
Contributors: Mutsumi Kimura; Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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Study on oxygen source and its effect on film properties of ZnO deposited by radio frequency magnetron sputtering

Applied Surface Science
2011-11 | Journal article
DOI: 10.1016/j.apsusc.2011.07.100
Part of ISSN: 0169-4332
Contributors: Yudai Kamada; Mamoru Furuta; Takahiro Hiramatsu; Toshiyuki Kawaharamura; Dapeng Wang; Shin-ichi Shimakawa; Chaoyang Li; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation

Japanese Journal of Applied Physics
2011-11-01 | Journal article
DOI: 10.7567/jjap.50.110204
Part of ISSN: 0021-4922
Contributors: Mamoru Furuta; Yudai Kamada; Mutsumi Kimura; Shin-ichi Shimakawa; Toshiyuki Kawaharamura; Dapeng Wang; Chaoyang Li; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation

Japanese Journal of Applied Physics
2011-10 | Journal article
DOI: 10.1143/jjap.50.110204
Part of ISSN: 0021-4922
Contributors: Mamoru Furuta; Yudai Kamada; Mutsumi Kimura; Shin-ichi Shimakawa; Toshiyuki Kawaharamura; Dapeng Wang; Chaoyang Li; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films

IEEE Transactions on Electron Devices
2011-09 | Journal article
DOI: 10.1109/ted.2011.2158546
Part of ISSN: 0018-9383
Contributors: Mutsumi Kimura; Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With Dual-Gate Structure

IEEE Electron Device Letters
2011-04 | Journal article
DOI: 10.1109/led.2011.2105459
Part of ISSN: 0741-3106
Contributors: Yudai Kamada; Shizuo Fujita; Mutsumi Kimura; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao
Source: Self-asserted source
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Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

Japanese Journal of Applied Physics
2011-03 | Journal article
DOI: 10.1143/jjap.50.03cb09
Part of ISSN: 0021-4922
Contributors: Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Chaoyang Li; Mutsumi Kimura; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
Furuta Mamoru via Crossref Metadata Search

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

Japanese Journal of Applied Physics
2011-03-01 | Journal article
DOI: 10.7567/jjap.50.03cb09
Part of ISSN: 0021-4922
Contributors: Mamoru Furuta; Yudai Kamada; Takahiro Hiramatsu; Chaoyang Li; Mutsumi Kimura; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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69.1: Photo-Leakage Current in ZnO TFTs for Transparent Electronics

SID Symposium Digest of Technical Papers
2010 | Journal article
DOI: 10.1889/1.3499823
Part of ISSN: 0097-966X
Contributors: Yudai Kamada; Shizuo Fujita; Takahiro Hiramatsu; Toshiyuki Matsuda; Mamoru Furuta; Takashi Hirao
Source: Self-asserted source
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Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

Electrochemical and Solid-State Letters
2010 | Journal article
DOI: 10.1149/1.3290741
Part of ISSN: 1099-0062
Contributors: Mamoru Furuta; Takashi Nakanishi; Mutsumi Kimura; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Toshiyuki Kawaharamura; Chaoyang Li; Takashi Hirao
Source: Self-asserted source
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High-Density Short-Height Directly Grown CNT Patterned Emitter on Glass

e-Journal of Surface Science and Nanotechnology
2010 | Journal article
DOI: 10.1380/ejssnt.2010.336
Part of ISSN: 1348-0391
Contributors: Hiroshi Furuta; Toshiyuki Kawaharamura; Katsumasa Kawabata; Mamoru Furuta; Tokiyoshi Matsuda; ChaoYang Li; Takashi Hirao
Source: Self-asserted source
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Uniformity and bias-temperature instability of bottom-gate zinc oxide thin-film transistors (ZnO TFTs)

Journal of the Society for Information Display
2010 | Journal article
DOI: 10.1889/jsid18.10.773
Part of ISSN: 1071-0922
Contributors: Mamoru Furuta; Mutsumi Kimura; Takahiro Hiramatsu; Takashi Nakanishi; Chaoyang Li; Takashi Hirao
Source: Self-asserted source
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Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures

IEEE Electron Device Letters
2010-11 | Journal article
DOI: 10.1109/led.2010.2068276
Part of ISSN: 0741-3106
Contributors: Mamoru Furuta; Yudai Kamada; Mutsumi Kimura; Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Chaoyang Li; Shizuo Fujita; Takashi Hirao
Source: Self-asserted source
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Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation

Applied Physics Letters
2010-10 | Journal article
DOI: 10.1063/1.3502563
Part of ISSN: 0003-6951
Contributors: Mutsumi Kimura; Yudai Kamada; Shizuo Fujita; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta; Takashi Hirao
Source: Self-asserted source
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Crystal Structure Analysis of Multiwalled Carbon Nanotube Forests by Newly Developed Cross-Sectional X-ray Diffraction Measurement

Applied Physics Express
2010-09 | Journal article
DOI: 10.1143/apex.3.105101
Part of ISSN: 1882-0778
Contributors: Hiroshi Furuta; Toshiyuki Kawaharamura; Mamoru Furuta; Katsumasa Kawabata; Takashi Hirao; Takuji Komukai; Kumiko Yoshihara; Yutaka Shimomoto; Toshiyuki Oguchi
Source: Self-asserted source
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Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy

Applied Surface Science
2010-08 | Journal article
DOI: 10.1016/j.apsusc.2010.04.015
Part of ISSN: 0169-4332
Contributors: Tokiyoshi Matsuda; Mamoru Furuta; Takahiro Hiramatsu; Hiroshi Furuta; Chaoyang Li; Takashi Hirao
Source: Self-asserted source
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Simulation study of the in-plane-type triode carbon nanotube emitter

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2010-07 | Journal article
DOI: 10.1116/1.3456180
Part of ISSN: 2166-2746
Contributors: Hiroshi Furuta; Kazuhisa Ishii; Kouji Okada; Mamoru Furuta; Takashi Hirao
Source: Self-asserted source
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Enhanced Nucleation of Microcrystalline Silicon Thin Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition with Low-Frequency Pulse Substrate Bias

Japanese Journal of Applied Physics
2010-05-06 | Journal article
DOI: 10.1143/jjap.49.050202
Part of ISSN: 0021-4922
Contributors: Mamoru Furuta; Takahiro Hiramatsu; Takashi Hirao
Source: Self-asserted source
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Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2010-03 | Journal article
DOI: 10.1116/1.3271250
Part of ISSN: 2166-2746
Contributors: Chaoyang Li; Tokiyoshi Matsuda; Toshiyuki Kawaharamura; Hiroshi Furuta; Mamoru Furuta; Takahiro Hiramatsu; Takashi Hirao; Yoichiro Nakanishi; Keiji Ichinomiya
Source: Self-asserted source
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Effect of Pulsed Substrate Bias on Film Properties of SiO2Deposited by Inductively Coupled Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics
2010-03 | Journal article
DOI: 10.1143/jjap.49.03ca03
Part of ISSN: 0021-4922
Contributors: Takahiro Hiramatsu; Tokiyoshi Matsuda; Hiroshi Furuta; Hiroshi Nitta; Toshiyuki Kawaharamura; Chaoyang Li; Mamoru Furuta; Takashi Hirao
Source: Self-asserted source
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Stacked color image sensor using wavelength-selective organic photoconductive films with zinc-oxide thin film transistors as a signal readout circuit

Sensors, Cameras, and Systems for Industrial/Scientific Applications XI
2010-02-04 | Conference paper
DOI: 10.1117/12.838347
Contributors: Hokuto Seo; Satoshi Aihara; Masakazu Namba; Toshihisa Watabe; Hiroshi Ohtake; Misao Kubota; Norifumi Egami; Takahiro Hiramatsu; Tokiyoshi Matsuda; Mamoru Furuta et al.
Source: Self-asserted source
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Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2010-01 | Journal article
DOI: 10.1116/1.3259843
Part of ISSN: 0734-2101
Contributors: Tokiyoshi Matsuda; Mamoru Furuta; Takahiro Hiramatsu; Hiroshi Furuta; Takashi Hirao
Source: Self-asserted source
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Peer review (29 reviews for 15 publications/grants)

Review activity for ACS applied electronic materials. (3)
Review activity for ACS applied materials & interfaces. (8)
Review activity for Advanced electronic materials (2)
Review activity for Advanced functional materials. (1)
Review activity for Advanced materials interfaces. (1)
Review activity for Advanced Materials Technologies (1)
Review activity for Applied physics letters. (1)
Review activity for Applied surface science. (1)
Review activity for Journal of alloys and compounds. (1)
Review activity for Journal of applied physics. (2)
Review activity for Materials science in semiconductor processing. (2)
Review activity for Physica status solidi. (1)
Review activity for Small methods (2)
Review activity for Small. (1)
Review activity for Thin solid films. (2)
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