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Employment (1)

Pusan National University: Busan, KR

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Ogyun Seok

Works (4)

A Comprehensive Design of Edge Terminations for High-Voltage SiC Devices Utilizing P-Type Epitaxial Layer

Journal of Electrical Engineering & Technology
2025-02 | Journal article
DOI: 10.1007/s42835-024-02130-0
Contributors: Sangyeob Kim; Ogyun Seok
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Analysis of Static and Dynamic Characteristics of 1.2 kV 4H-SiC Trench MOSFETs with Trenched P-Source and Buried P+ Layers

Journal of Electrical Engineering & Technology
2025-02 | Journal article
DOI: 10.1007/s42835-024-02129-7
Contributors: Gyuhyeok Kang; Yeongeun Park; Ogyun Seok
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Crossref

Improved Switching Characteristics of 1.2 kV P-Shielded Split Gate SiC MOSFETs

Journal of Electrical Engineering & Technology
2025-02 | Journal article
DOI: 10.1007/s42835-024-02132-y
Contributors: Kanghee Shin; Dongkyun Kim; Minu Kim; Junho Park; Ogyun Seok
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Crossref

Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide

Microelectronic Engineering
2020-03 | Journal article
DOI: 10.1016/j.mee.2020.111280
Contributors: Ogyun Seok; In Ho Kang; Jeong Hyun Moon; Hyoung Woo Kim; Min-Woo Ha; Wook Bahng
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