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Scopus Author ID: 55342663700

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Indian Institute of Technology Gandhinagar: Gandhinagar, Gujrat, IN

Assistant Professor (Electrical Engineering)
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Sandip Lashkare

Works (20)

Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing

IEEE Electron Device Letters
2020 | Journal article
DOI: 10.1109/led.2020.3010858
Part of ISSN: 0741-3106
Contributors: S. Lashkare; S. Subramoney; U. Ganguly
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Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed

2020 Device Research Conference (DRC)
2020-06 | Other
DOI: 10.1109/drc50226.2020.9135171
Contributors: Jayatika Sakhuja; Sandip Lashkare; Vivek Saraswat; Udayan Ganguly
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Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM

ACS Applied Electronic Materials
2020-06 | Journal article
DOI: 10.1021/acsaelm.0c00297
Part of ISSN: 2637-6113
Contributors: Sandip Lashkare; Vivek Saraswat; Udayan Ganguly
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PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem

APL Materials
2019-09-01 | Journal article
DOI: 10.1063/1.5108694
Part of ISSN: 2166-532X
Contributors: Devesh Khilwani; Vineet Moghe; Sandip Lashkare; Vivek Saraswat; Pankaj Kumbhare; Maryam Shojaei Baghini; Srivatsava Jandhyala; Sreenivas Subramoney; Udayan Ganguly
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Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing

2019 IEEE 9th International Nanoelectronics Conferences (INEC)
2019-07 | Other
DOI: 10.1109/inec.2019.8853856
Contributors: S. Lashkare; J. Sakhuja; U. Ganguly
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Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise

2019 Device Research Conference (DRC)
2019-06 | Other
DOI: 10.1109/drc46940.2019.9046471
Contributors: Vivek Saraswat; Sandip Lashkare; Pankaj Kumbhare; Udayan Ganguly
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Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics

Neurocomputing
2018 | Journal article
DOI: 10.1016/j.neucom.2018.09.019
Part of ISSN: 0925-2312
Contributors: Anakha V Babu; Sandip Lashkare; Udayan Ganguly; Bipin Rajendran
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A Compact PrMnO<inf>3</inf> Based Oscillator as an Alternative to CMOS Ring Oscillator in a Smart Temperature Sensor

2018 IEEE SENSORS
2018-10 | Other
DOI: 10.1109/icsens.2018.8589573
Contributors: Sandip Lashkare; Pankaj Kumbhare; Vivek Saraswat; Shouri Chatterjee; Udayan Ganguly
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Transient Joule Heating in PrMnO3 RRAM enables ReLU type Neuron

2018 Non-Volatile Memory Technology Symposium (NVMTS)
2018-10 | Other
DOI: 10.1109/nvmts.2018.8603101
Contributors: S. Lashkare; A. Bhat; P. Kumbhare; U. Ganguly
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Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing

IEEE Electron Device Letters
2018-09 | Journal article
DOI: 10.1109/led.2018.2854732
Part of ISSN: 0741-3106
Contributors: S. Lashkare; P. Kumbhare; V. Saraswat; U. Ganguly
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A case for multiple and parallel RRAMs as synaptic model for training SNNs

2018 International Joint Conference on Neural Networks (IJCNN)
2018-07 | Other
DOI: 10.1109/ijcnn.2018.8489429
Contributors: Aditya Shukla; Sidharth Prasad; Sandip Lashkare; Udayan Ganguly
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PCMO RRAM for Integrate-and-Fire Neuron in Spiking Neural Networks

IEEE Electron Device Letters
2018-04 | Journal article
DOI: 10.1109/led.2018.2805822
Part of ISSN: 0741-3106
Contributors: S. Lashkare; S. Chouhan; T. Chavan; A. Bhat; P. Kumbhare; U. Ganguly
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PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP

IEEE Electron Device Letters
2017-09 | Journal article
DOI: 10.1109/led.2017.2723503
Part of ISSN: 0741-3106
Contributors: S. Lashkare; N. Panwar; P. Kumbhare; B. Das; U. Ganguly
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High performance triangular barrier engineered NIPIN selector for bipolar RRAM

2014 IEEE 6th International Memory Workshop (IMW)
2014-05 | Other
DOI: 10.1109/imw.2014.6849388
Contributors: R. Meshram; B. Das; R. Mandapati; S. Lashkare; S. Deshmukh; S. Lodha; U. Ganguly; J. Schulze
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I-NPN: A sub-60mV/decade, sub-0.6V selection diode for STTRAM

71st Device Research Conference
2013-06 | Other
DOI: 10.1109/drc.2013.6633819
Contributors: S. Deshmukh; S. Lashkare; B. Rajendran; U. Ganguly
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A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry

2013 5th IEEE International Memory Workshop
2013-05 | Other
DOI: 10.1109/imw.2013.6582128
Contributors: S. Lashkare; P. Karkare; P. Bafna; M.V.S. Raju; V.S.S. Srinivasan; S. Lodha; U. Ganguly; J. Schulze; S. Chopra
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Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM

2012 International Conference on Emerging Electronics
2012 | Other
DOI: 10.1109/icemelec.2012.6636237
Contributors: S. Lashkare; P. Karkare; P. Bafna; S. Deshmukh; V.S.S. Srinivasan; S. Lodha; U. Ganguly
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Comparison of novel punch-through diode (NPN) selector with MIM selector for bipolar RRAM

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings
2012-10 | Other
DOI: 10.1109/nvmts.2013.6632861
Contributors: S. Deshmukh; R. Mandapati; S. Lashkare; A. Borkar; V.S.S. Srivinasan; S. Lodha; U. Ganguly
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Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

IEEE Electron Device Letters
2012-10 | Journal article
DOI: 10.1109/led.2012.2209394
Part of ISSN: 0741-3106
Contributors: V. S. S. Srinivasan; S. Chopra; P. Karkare; P. Bafna; S. Lashkare; P. Kumbhare; Y. Kim; S. Srinivasan; S. Kuppurao; S. Lodha et al.
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Epitaxial Si punch-through based selector for bipolar RRAM

70th Device Research Conference
2012-06 | Other
DOI: 10.1109/drc.2012.6256979
Contributors: P. Bafna; P. Karkare; S Srinivasan; S. Chopra; S. Lashkare; Y. Kim; S. Srinivasan; S. Kuppurao; S. Lodha; U. Ganguly
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