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Biography

Dr. Sulagna Chatterjee received a B.Sc. in Electronics Honours from Gokhale Memorial Girls’ College, University of Calcutta. She was awarded the National MERIT scholarship by Govt. Of India for her performance in B.Sc. Honours. She did her M.Sc. in Electronic Science from the department of Electronic Science, University of Calcutta. Then she did her M.Tech. in Radio Physics and Electronics from Institute of Radio Physics and Electronics, University of Calcutta, Raja Bazar Campus, where she stood FIRST CLASS FIRST and was AWARDED THE GOLD MEDAL and also was AWARDED Pareshlal Dhar Bhowmick Book Award for OUTSTANDING ACADEMIC EXCELLENCE by scoring a CGPA of 9.09. She won many prestigious fellowships for her Ph.D., namely, CSIR (Senior Research Fellow) (Govt. of India), Dept. of Science and Technology (DST) Scholarship (Govt. of India) and I.I.T. Institute Fellowship for Ph.D. in the Dept. of Electronics and Electrical Communication Engineering (I.I.T. Kharagpur). She has obtained her Ph.D. (Tech.) degree in Nano Science and Nano Technology, in April, 2019 from Centre for Research in Nanoscience and Nanotechnology, University of Calcutta. She was RESEARCH ASSOCIATE in the School of Physical Sciences at INDIAN ASSOCIATION for the CULTIVATION of SCIENCE. And she is currently serving as ASSISTANT PROFESSOR in the Dept. of ELECTRONICS at ABHEDANANDA MAHAVIDYALAYA, by qualifying WEST BENGAL COLLEGE SERVICE COMMISSION. She has 8 years of teaching experience in the Department of Electronics.
She is a REVIEWER for many esteemed international journals including, IEEE Transactions on materials reliability, Journal of Applied Physics, Journal of Materials and Design and many others having very high impact factors. She has also reviewed for reputed international journal in the field of applied mathematics. She is also an editorial board member for international journal of repute.
She has been awarded in various categories of the prestigious InSc Awards, namely, Young Achiever, Research Excellence, Academic Excellence and Best Teacher for the year 2020. She has received several best reviewer awards, as well.

Her research area is Strain modeling in semiconductor devices including nanowire FETs, FinFETs, UTB MOSFETs and also various Avalanche Transit Time (ATT) devices (like MITATT, IMPATT), Characterization of stress-free and stress-induced nanoscale FET devices using NEGF and modeling of their band structures, Nanoscale quantum confinement.

Activities

Employment (4)

University of Burdwan: Abhedananda Mahavidyalaya, Sainthia, West Bengal, IN

2023-11-22 to present | Assistant Professor (Electronics , Physics )
Employment
Source: Self-asserted source
Dr. Sulagna Chatterjee

Indian Association for the Cultivation of Science: Kolkata, West Bengal, IN

2023-07 to 2023-10 (School of Physical Sciences)
Employment
Source: Self-asserted source
Dr. Sulagna Chatterjee

Adamas University: Kolkata, West Bengal, IN

2018-07-18 to 2023 | Assistant Professor (Electronics and Communication Engineering)
Employment
Source: Self-asserted source
Dr. Sulagna Chatterjee

Institute of Engineering and Management : KOLKATA, WEST BENGAL, IN

2016-07-16 to 2017-12-27 | Assistant Professor (Electronics and Communication Engineering)
Employment
Source: Self-asserted source
Dr. Sulagna Chatterjee

Education and qualifications (4)

University of Calcutta: Kolkata, West Bengal, IN

2013-01-01 to 2019-04-24 | Ph. D. (Nanoscience and Nanotechnology)
Education
Source: Self-asserted source
Dr. Sulagna Chatterjee

University of Calcutta: Kolkata, West Bengal, IN

2008-08 to 2010-07 | M. Tech. (Radio Physics and Electronics)
Education
Source: Self-asserted source
Dr. Sulagna Chatterjee

University of Calcutta: Kolkata, West Bengal, IN

2006-08 to 2008-07 | M. Sc. (Electronic Science)
Education
Source: Self-asserted source
Dr. Sulagna Chatterjee

University of Calcutta: Kolkata, West Bengal, IN

2003 to 2006 | B.Sc. Honours (Electronics)
Education
Source: Self-asserted source
Dr. Sulagna Chatterjee

Professional activities (10)

Department of Science and Technology: New Delhi, IN

INSPIRE Fellow
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

InSc: Bangalore, IN

2020-05 | Young Achiever
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

InSc: Bangalore, IN

2020-05 | Research Excellence
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

InSc: Bangalore, IN

2020-05 | Academic Excellence
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

InSc: Bangalore, IN

2020-05 | Best Teacher
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

Council of Scientific and Industrial Research: New Delhi, IN

2011 | CSIR-SRF
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

University of Calcutta: Kolkata, West Bengal, IN

2010 | Gold Medal for being First class First (Radio Physics and Electronics)
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

University of Calcutta: Kolkata, West Bengal, IN

2010 | Outstanding Academic Excellence
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

Indian Institute of Technology Kharagpur: Kharagpur, IN

2010 | Institute Fellow (Electronics and communication engineering)
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

Govt. Of India : Delhi, IN

2006 | National Merit Scholarship
Distinction
Source: Self-asserted source
Dr. Sulagna Chatterjee

Works (20)

Si/Graphene exotic type IMPATT (p+-n-n+-) Opto-sensor: First experimental observation

Materials Science in Semiconductor Processing
2025-02 | Journal article
Part of ISSN: 1369-8001
Contributors: Sulagna Chatterjee; Madhumita Chakravarti; Moumita Mukherjee
Source: Self-asserted source
Dr. Sulagna Chatterjee

Power-enhancement mode high electron mobility avalanche transit time (HEMATT) oscillators at THz region: a study on electro-optical characteristics

Microsystem Technologies
2024-11 | Journal article | Conceptualization, Investigation, Writing - original draft
Contributors: Dr. Sulagna Chatterjee; Moumita Mukherjee
Source: Self-asserted source
Dr. Sulagna Chatterjee

Role of two-dimensional electron gas (2DEG) in GaN/AlGaN avalanche transit time (ATT) oscillator for RF performance boosting: application in THz opto-electronics

Microsystem Technologies
2024-10 | Journal article
Contributors: Sulagna Chatterjee; Moumita Mukherjee
Source: check_circle
Crossref

Gap-opening in Graphene by Substrate-induced Strain-engineering Coupled with Magnetic Spin-engineering

SCOPUS indexed Book Series of LNEE ( Lecture Notes on Electrical Engineering) of Springer Nature, ( Impact Factor=0.5)
2023 | Book chapter
Contributors: Dr. Sulagna Chatterjee
Source: Self-asserted source
Dr. Sulagna Chatterjee

Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source

Journal of Electronic Materials
2023-02 | Journal article
Part of ISSN: 0361-5235
Part of ISSN: 1543-186X
Contributors: Sulagna Chatterjee; PROF. (DR.) MOUMITA MUKHERJEE
Source: Self-asserted source
Dr. Sulagna Chatterjee

Opening of Bandgap in Graphene: A Complete Overview to Unexplored Aspects

Advances in Materials Science Research. Volume 45, Chapter 4, pp. Nova Science Publishers, Inc., New York, 2021, ISBN: 978-1-68507-098-4
2022 | Book chapter
Contributors: Dr. Sulagna Chatterjee
Source: Self-asserted source
Dr. Sulagna Chatterjee

High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches

Microsystem Technologies
2022-04 | Journal article
Contributors: Sulagna Chatterjee; Moumita Mukherjee
Source: check_circle
Crossref

Band-engineered quasi-AlGaN/GaN high-electron-mobility-avalanche-transit-time (HEMATT) oscillator: electro-optical interaction study in sub-mm frequency domain

The European Physical Journal Plus
2022-03 | Journal article
Part of ISSN: 2190-5444
Contributors: Sulagna Chatterjee; PROF. (DR.) MOUMITA MUKHERJEE
Source: Self-asserted source
Dr. Sulagna Chatterjee

Process-induced Strain-Engineering in Nano-Scale: Coupled Effect of Quantum Confinement and Strain, an Unexplored Aspect of Advanced Materials Research with Immense Potential

Advances in Materials Science Research, Vol: 44, Chapter 3, pp. 97-125, Nova Science Publishers, Inc., New York, 2021, ISBN: 978-1-53619-028-1, e-Book ISBN: 978-1-53619-092-2, ISSN: 2159-1997
2021 | Book chapter
Contributors: Dr. Sulagna Chatterjee
Source: Self-asserted source
Dr. Sulagna Chatterjee

Millimetre‐wave high–low IMPATT source development: First on‐chip experimental verification

Electronics Letters
2021-03 | Journal article
Part of ISSN: 0013-5194
Part of ISSN: 1350-911X
Contributors: Moumita Mukherjee; Sulagna Chatterjee
Source: Self-asserted source
Dr. Sulagna Chatterjee

Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches

Applied Physics A
2021-02 | Journal article
Contributors: Sulagna Chatterjee; Moumita Mukherjee
Source: check_circle
Crossref

Direct band gap silicon nanowire avalanche transit time thz opto-electronic sensor with strain-engineering

Optical and Quantum Electronics
2020-11 | Journal article
Contributors: Sulagna Chatterjee; Moumita Mukherjee
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Hybrid Multi-Graphene/Si Avalanche Transit Time <h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies

IEEE Transactions on Device and Materials Reliability
2020-08 | Journal article
Source: Self-asserted source
Dr. Sulagna Chatterjee
grade
Preferred source (of 2)‎

THz Medical imaging: Current status and future outlook

THz Biomedical and Healthcare Technologies
2020-08 | Book chapter
Source: Self-asserted source
Dr. Sulagna Chatterjee

Strain-Engineered Asymmetrical Superlattice Si/Si1–x Ge x Nano-ATT $\langle$ p++-n-n−-n++$\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain

IEEE Transactions on Electron Devices
2019-08 | Journal article
Contributors: Sulagna Chatterjee; Moumita Mukherjee
Source: check_circle
Crossref

Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates

Journal of Applied Physics
2019-02 | Journal article
Source: Self-asserted source
Dr. Sulagna Chatterjee

Fraction of Insertion of the Channel Fin as Performance Booster in Strain-Engineered p-FinFET Devices With Insulator-on-Silicon Substrate

IEEE Transactions on Electron Devices
2018-02 | Journal article
Contributors: Sulagna Chatterjee; Sanatan Chattopadhyay
Source: check_circle
Crossref

Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates

Superlattices and Microstructures
2016-12 | Journal article
Source: Self-asserted source
Dr. Sulagna Chatterjee

Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

Superlattices and Microstructures
2016-10 | Journal article
Contributors: Sulagna Chatterjee; Sanatan Chattopadhyay
Source: check_circle
Crossref

Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics

Semiconductor Science and Technology, Volume 28, Issue 12, article id. 125011 (2013)
2013-11 | Journal article
Source: Self-asserted source
Dr. Sulagna Chatterjee

Peer review (11 reviews for 3 publications/grants)

Review activity for e-Prime - Advances in Electrical Engineering, Electronics and Energy (1)
Review activity for International journal of infrared and millimeter waves. (1)
Review activity for Microsystem technologies. (9)