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ResearcherID: C-1859-2014
Scopus Author ID: 8915790700

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Ioffe Institute: Saint Petersburg, RU

2010-10-01 to present | Junior researcher (Division of Physics of Dielectric and Semiconductors)
Employment
Source: Self-asserted source
Alehander Myasoedov

Works (30)

Dissociation of 13<101‾1> misfit dislocation at the interface of α-Ga2O3 thin film deposited on m-plane sapphire

Materials Science in Semiconductor Processing
2024-12 | Journal article
DOI: 10.1016/j.mssp.2024.108778
Contributors: A.V. Myasoedov; I.S. Pavlov; A.V. Morozov; A.I. Pechnikov; S.I. Stepanov; V.I. Nikolaev
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Crossref

TEM investigation of the interface formation during transfer of 3C-SiC(001) layer onto 6H-SiC(0001) wafer

Journal of Applied Physics
2024-09-21 | Journal article
DOI: 10.1063/5.0227316
Contributors: A. V. Myasoedov; M. G. Mynbaeva; S. P. Lebedev; S. Iu. Priobrazhenskii; D. G. Amelchuk; D. A. Kirilenko; A. A. Lebedev
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Crossref

Planar defects in α-Ga2O3 thin films produced by HVPE

Journal of Applied Physics
2024-03-28 | Journal article
DOI: 10.1063/5.0189133
Contributors: A. V. Myasoedov; I. S. Pavlov; A. I. Pechnikov; S. I. Stepanov; V. I. Nikolaev
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Crossref

Piezoelectric fields and martensitic transition in spontaneously ordered GaInP2/GaAs epi-layers

Applied Physics Letters
2024-01-29 | Journal article
DOI: 10.1063/5.0172579
Contributors: A. V. Ankudinov; N. A. Bert; M. S. Dunaevskiy; A. I. Galimov; N. A. Kalyuzhnyy; S. A. Mintairov; A. V. Myasoedov; N. V. Pavlov; M. V. Rakhlin; R. A. Salii et al.
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Crossref

Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga2O3 Grown by Epitaxial Lateral Overgrowth

ECS Journal of Solid State Science and Technology
2023-11-01 | Journal article
DOI: 10.1149/2162-8777/ad0888
Contributors: V. I. Nikolaev; A. Y. Polyakov; A. V. Myasoedov; I. S. Pavlov; A. V. Morozov; A. I. Pechnikov; In-Hwan Lee; E. B. Yakimov; A. A. Vasilev; M. P. Scheglov et al.
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Crossref

A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates

Technical Physics Letters
2020 | Journal article
DOI: 10.1134/S1063785020100119
EID:

2-s2.0-85095772224

Part of ISBN:

10906533 10637850
Contributors: Myasoedov, A.V.; Sakharov, A.V.; Nikolaev, A.E.; Kalmykov, A.E.; Sorokin, L.M.; Lundin, W.V.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

An Increase of Threading Dislocations Filtering Efficiency in Al<inf>2</inf>O<inf>3</inf> Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy

Technical Physics Letters
2020 | Journal article
DOI: 10.1134/S1063785020060097
EID:

2-s2.0-85088571458

Part of ISBN:

10906533 10637850
Contributors: Myasoedov, A.V.; Nechaev, D.V.; Ratnikov, V.V.; Kalmykov, A.E.; Sorokin, L.M.; Jmerik, V.N.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

Technical Physics Letters
2020 | Journal article
DOI: 10.1134/S1063785020040240
EID:

2-s2.0-85085976506

Part of ISBN:

10906533 10637850
Contributors: Ratnikov, V.V.; Nechaev, D.V.; Myasoedov, A.V.; Koshelev, O.A.; Zhmerik, V.N.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al<inf>2</inf>O<inf>3</inf> templates grown by PA MBE

Superlattices and Microstructures
2020 | Journal article
DOI: 10.1016/j.spmi.2019.106368
EID:

2-s2.0-85076514131

Part of ISBN:

10963677 07496036
Contributors: Nechaev, D.V.; Koshelev, O.A.; Ratnikov, V.V.; Brunkov, P.N.; Myasoedov, A.V.; Sitnikova, A.A.; Ivanov, S.V.; Jmerik, V.N.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Third International Conference “Physics for Life Sciences” Study of Dentin Structural Features by Computed Microtomography and Transmission Electron Microscopy

Technical Physics
2020 | Journal article
DOI: 10.1134/S1063784220090054
EID:

2-s2.0-85090921609

Part of ISBN:

10906525 10637842
Contributors: Argunova, T.S.; Gudkina, Z.V.; Gutkin, M.Y.; Zaytsev, D.V.; Kalmykov, A.E.; Myasoedov, A.V.; Nazarova, E.D.; Panfilov, P.E.; Sorokin, L.M.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001)

Technical Physics Letters
2018 | Journal article
DOI: 10.1134/S1063785018100267
EID:

2-s2.0-85058541234

Part of ISBN:

10637850
Contributors: Kalmykov, A.E.; Myasoedov, A.V.; Sorokin, L.M.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

CuO nanowhiskers: Preparation, structure features, properties, and applications

Materials Science and Technology
2018-11 | Journal article
DOI: 10.1080/02670836.2018.1514706
Contributors: M. Dorogov; A. Kalmykov; L. Sorokin; A. Kozlov; A. Myasoedov; D. Kirilenko; N. Chirkunova; A. Priezzheva; A. Romanov; E. C. Aifantis
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Crossref
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Distribution of dislocations near the interface in AIN crystals grown on evaporated SiC substrates

Crystals
2017 | Journal article
DOI: 10.3390/cryst7060163
EID:

2-s2.0-85020378655

Part of ISBN:

20734352
Contributors: Argunova, T.S.; Gutkin, M.Y.; Je, J.H.; Kalmykov, A.E.; Kazarova, O.P.; Mokhov, E.N.; Mikaelyan, K.N.; Myasoedov, A.V.; Sorokin, L.M.; Shcherbachev, K.D.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Effect of low NiO doping on anomalous light scattering in zinc aluminosilicate glass-ceramics

Journal of Non-Crystalline Solids
2017 | Journal article
DOI: 10.1016/j.jnoncrysol.2017.08.012
EID:

2-s2.0-85027398831

Part of ISBN:

00223093
Contributors: Shepilov, M.P.; Dymshits, O.S.; Zhilin, A.A.; Golubkov, V.V.; Kalmykov, A.E.; Alekseeva, I.P.; Myasoedov, A.V.; Hubetsov, A.A.; Zapalova, S.S.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

Physica Status Solidi (A) Applications and Materials Science
2017 | Journal article
DOI: 10.1002/pssa.201700190
EID:

2-s2.0-85025074258

Part of ISBN:

18626319 18626300
Contributors: Rozhavskaya, M.M.; Kukushkin, S.A.; Osipov, A.V.; Myasoedov, A.V.; Troshkov, S.I.; Sorokin, L.M.; Brunkov, P.N.; Baklanov, A.V.; Telyatnik, R.S.; Juluri, R.R. et al.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

Journal of Crystal Growth
2017 | Journal article
DOI: 10.1016/j.jcrysgro.2016.05.025
EID:

2-s2.0-84969931474

Part of ISBN:

00220248
Contributors: Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Semipolar AlN on Si(100): Technology and properties

Microelectronic Engineering
2017 | Journal article
DOI: 10.1016/j.mee.2017.04.047
EID:

2-s2.0-85018941134

Part of ISBN:

01679317
Contributors: Bessolov, V.; Kalmykov, A.; Konenkov, S.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Osipov, A.; Panteleev, V.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Structural and optical properties of chrysotile with gold nanoparticles in channels

Proceedings of the International Conference Days on Diffraction 2017, DD 2017
2017 | Conference paper
DOI: 10.1109/DD.2017.8167991
EID:

2-s2.0-85046095988
Contributors: Belotitskii, V.I.; Kumzerov, Y.A.; Sysoeva, A.A.; Kalmykov, A.E.; Myasoedov, A.V.; Sorokin, L.M.; Andronikova, D.A.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

TEM investigation of nanostructures with a high aspect ratio

Springer Proceedings in Physics
2017 | Conference paper
DOI: 10.1007/978-3-319-46601-9_17
EID:

2-s2.0-84996497372

Part of ISBN:

18674941 09308989
Contributors: Myasoedov, A.V.; Kalmykov, A.E.; Kirilenko, D.A.; Sorokin, L.M.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Thin film GaP for solar cell application

Journal of Physics: Conference Series
2016 | Conference paper
DOI: 10.1088/1742-6596/741/1/012088
EID:

2-s2.0-84989350504

Part of ISBN:

17426596 17426588
Contributors: Morozov, I.A.; Gudovskikh, A.S.; Kudryashov, D.A.; Nikitina, E.V.; Kleider, J.-P.; Myasoedov, A.V.; Levitskiy, V.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

Physics of the Solid State
2015 | Journal article
DOI: 10.1134/S1063783415100042
EID:

2-s2.0-84943785463

Part of ISBN:

10637834
Contributors: Bessolov, V.N.; Grashchenko, A.S.; Konenkova, E.V.; Myasoedov, A.V.; Osipov, A.V.; Red’kov, A.V.; Rodin, S.N.; Rubets, V.P.; Kukushkin, S.A.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

Physics of the Solid State
2015 | Journal article
DOI: 10.1134/S1063783415090218
EID:

2-s2.0-84940755731

Part of ISBN:

10637834
Contributors: Kukushkin, S.A.; Osipov, A.V.; Rozhavskaya, M.M.; Myasoedov, A.V.; Troshkov, S.I.; Lundin, V.V.; Sorokin, L.M.; Tsatsul’nikov, A.F.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates

Semiconductor Science and Technology
2015 | Journal article
DOI: 10.1088/0268-1242/30/11/114002
EID:

2-s2.0-84945949270

Part of ISBN:

13616641 02681242
Contributors: Sorokin, L.M.; Myasoedov, A.V.; Kalmykov, A.E.; Kirilenko, D.A.; Bessolov, V.N.; Kukushkin, S.A.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

Technical Physics Letters
2014 | Journal article
DOI: 10.1134/S1063785014050046
EID:

2-s2.0-84904413377

Part of ISBN:

10637850
Contributors: Bessolov, V.N.; Konenkova, E.V.; Kukushkin, S.A.; Myasoedov, A.V.; Osipov, A.V.; Rodin, S.N.; Shcheglov, M.P.; Feoktistov, N.A.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom substitution

Materials Physics and Mechanics
2014 | Journal article
EID:

2-s2.0-84906675586

Part of ISBN:

16058119 16052730
Contributors: Bessolov, V.N.; Konenkova, E.V.; Kukushkin, S.A.; Myasoedov, A.V.; Rodin, S.N.; Osipov, A.V.; Shcheglov, M.P.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

Technical Physics Letters
2013 | Journal article
DOI:

10.1134/S1063785013110230

Part of ISSN:

1063-7850;1090-6533
Contributors: Ratnikov, V. V.; Kalmykov, A. E.; Myasoedov, A. V.; Kukushkin, S. A.; Osipov, A. V.; Sorokin, L. M.
Source: Self-asserted source
Alehander Myasoedov via ResearcherID
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Preferred source (of 2)‎

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

18th Microscopy of Semiconducting Materials Conference (Msm Xviii)
2013 | Journal article
DOI:

10.1088/1742-6596/471/1/012033

Part of ISSN:

1742-6588;*****************
Contributors: Sorokin, L. M.; Kalmykov, A. E.; Myasoedov, A. V.; Bessolov, V. N.; Osipov, A. V.; Kukushkin, S. A.; IOP
Source: Self-asserted source
Alehander Myasoedov via ResearcherID
grade
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Последовательная структурная характеризация слоев в системе GaN/AlN/SiC/Si(111) методом рентгеновской дифрактометрии после каждой стадии их образования

Письма ЖТФ
2013 | Journal article
Source: Self-asserted source
Alehander Myasoedov

Structural characterization of GaN/AlN layers on 3C-SiC/Si(111) by TEM

17th International Conference on Microscopy of Semiconducting Materials 2011
2011 | Journal article
DOI:

10.1088/1742-6596/326/1/012015

Part of ISSN:

1742-6588;*****************
Contributors: Sorokin, L. M.; Kalmykov, A. E.; Myasoedov, A. V.; Veselov, N. V.; Bessolov, V. N.; Feoktistov, N. A.; Osipov, A. V.; Kukushkin, S. A.; IOP; Walther, T et al.
Source: Self-asserted source
Alehander Myasoedov via ResearcherID
grade
Preferred source (of 2)‎

Positive temperature coefficient of resistance in the lead-containing ceramic barium titanate

Technical Physics
1997 | Journal article
DOI: 10.1134/1.1258783
EID:

2-s2.0-26844457662

Part of ISBN:

10637842
Contributors: Myasoedov, A.V.; Syrtsov, S.R.
Source: Self-asserted source
Alehander Myasoedov via Scopus - Elsevier
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