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Scopus Author ID: 6701706773

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Works (22)

High Al-content AlGaN channel high electron mobility transistors on silicon substrate

e-Prime - Advances in Electrical Engineering, Electronics and Energy
2023 | Journal article
DOI: 10.1016/j.prime.2023.100114
EID:

2-s2.0-85147137984

Part of ISSN: 27726711
Contributors: Mehta, J.; Abid, I.; Bassaler, J.; Pernot, J.; Ferrandis, P.; Nemoz, M.; Cordier, Y.; Rennesson, S.; Tamariz, S.; Semond, F. et al.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Surface defects related to polishing cycle in ß-Ga<sub>2</sub>O<sub>3</sub> crystals grown by floating zone

Applied Physics Letters
2023 | Journal article
DOI: 10.1063/5.0149969
EID:

2-s2.0-85161025993

Part of ISSN: 00036951
Contributors: Perrier, C.; Traoré, A.; Ito, T.; Umezawa, H.; Gheeraert, E.; Ferrandis, P.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate

2022 Compound Semiconductor Week, CSW 2022
2022 | Conference paper
DOI: 10.1109/CSW55288.2022.9930430
EID:

2-s2.0-85142491774
Contributors: Mehta, J.; Abid, I.; Bassaler, J.; Pernot, J.; Ferrandis, P.; Rennesson, S.; Ngo, T.H.; Nemoz, M.; Tamariz, S.; Cordier, Y. et al.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

J. Appl. Phys. 131, 124501 (2022)
2022-03-24 | Journal article
DOI: 10.1063/5.0077107
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

J. Appl. Phys. 129, 215701 (2021)
2021-06-01 | Journal article
DOI: 10.1063/5.0045306
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Journal of Luminescence 234, 117937 (2021)
2021-01-24 | Journal article
DOI: 10.1016/j.jlumin.2021.117937
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Analysis of hole-like traps in deep level transient spectroscopy spectra of AlGaN/GaN heterojunctions

J. Phys. D: Appl. Phys. 53, 185105 (2020)
2020-02-28 | Journal article
DOI: 10.1088/1361-6463/ab7626
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Characterization of micro-pixelated InGaP/AlGaInP quantum well structures

Proc. SPIE 11302, 1130221 (2020)
2020-02-25 | Journal article
DOI: 10.1117/12.2544350
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Deep traps localization in AlGaN/GaN MIS-HEMTs by a comparative study using capacitance and current deep level transient spectroscopies

Journal of Physics: Conf. Series 1190, 012013 (2019)
2019-05-27 | Journal article
DOI: 10.1088/1742-6596/1190/1/012013
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors

Semicond. Sci. Technol. 34, 045011 (2019)
2019-03-11 | Journal article
DOI: 10.1088/1361-6641/ab07d2
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Electrical properties of thin silicon oxides grown at room temperature by ion beam sputtering technique

Journal of Materials Science: Materials in Electronics 30, 4880 (2019)
2019-01-28 | Journal article
DOI: 10.1007/s10854-019-00782-7
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

J. Appl. Phys. 125, 035702 (2019)
2019-01-21 | Journal article
DOI: 10.1063/1.5055926
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Electrical properties of metal/Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As capacitors grown on InP

Journal of Applied Physics
2018 | Journal article
DOI: 10.1063/1.5007920
EID:

2-s2.0-85037060601
Contributors: Ferrandis, P.; Billaud, M.; Duvernay, J.; Martin, M.; Arnoult, A.; Grampeix, H.; Cassé, M.; Boutry, H.; Baron, T.; Vinet, M. et al.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence

Proc. SPIE 10532, 1053225 (2018)
2018-02-23 | Journal article
DOI: 10.1117/12.2289067
Source: Self-asserted source
PHILIPPE FERRANDIS
grade
Preferred source (of 2)‎

Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes

Microelectronic Engineering
2017 | Journal article
DOI: 10.1016/j.mee.2017.05.022
EID:

2-s2.0-85019465503
Contributors: Ferrandis, P.; Charles, M.; Gillot, C.; Escoffier, R.; Morvan, E.; Torres, A.; Reimbold, G.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Japanese Journal of Applied Physics
2017 | Journal article
DOI: 10.7567/JJAP.56.04CG01
EID:

2-s2.0-85017125625
Contributors: Ferrandis, P.; Charles, M.; Baines, Y.; Buckley, J.; Garnier, G.; Gillot, C.; Reimbold, G.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Deep-level transient spectroscopy of interfacial states in "buffer-free" p-i-n GaSb/GaAs devices

Journal of Applied Physics
2013 | Journal article
DOI: 10.1063/1.4824378
EID:

2-s2.0-84885435947
Contributors: Aziz, M.; Ferrandis, P.; Mesli, A.; Hussain Mari, R.; Francisco Felix, J.; Sellai, A.; Jameel, D.; Al Saqri, N.; Khatab, A.; Taylor, D. et al.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Ferroelectric Bi<inf>3.25</inf>La<inf>0.75</inf>Ti<inf>3</inf>O<inf>12</inf> thin films on a conductive Sr<inf>4</inf>Ru<inf>2</inf>O<inf>9</inf> electrode obtained by pulsed laser deposition

Thin Solid Films
2007 | Journal article
DOI: 10.1016/j.tsf.2006.11.075
EID:

2-s2.0-34247501225
Contributors: Chmielowski, R.; Madigou, V.; Ferrandis, Ph.; Zalecki, R.; Blicharski, M.; Leroux, Ch.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD

Physica E: Low-Dimensional Systems and Nanostructures
2003 | Journal article
DOI: 10.1016/S1386-9477(02)00853-6
EID:

2-s2.0-0345381753
Contributors: Ferrandis, P.; Vescan, L.; Holländer, B.; Dashtizadeh, V.; Dieker, C.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Growth and characterization of Ge islands on Si(1 1 0)

Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2002 | Journal article
DOI: 10.1016/S0921-5107(01)00836-4
EID:

2-s2.0-0037074811
Contributors: Ferrandis, P.; Vescan, L.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Optical characterisation of Ge islands grown on Si(110)

Microelectronics Journal
2002 | Journal article
DOI: 10.1016/S0026-2692(02)00016-2
EID:

2-s2.0-0036641231
Contributors: Ferrandis, P.; Vescan, L.; Holländer, B.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Optical properties of self-organised SSMBE and GSMBE Ge nanostructures grown on SiGe template layers on Si (118)

Materials Research Society Symposium - Proceedings
2001 | Journal article
EID:

2-s2.0-0035558401
Contributors: Brémond, G.; Ferrandis, P.; Souifi, A.; Ronda, A.; Berbezier, I.
Source: Self-asserted source
PHILIPPE FERRANDIS via Scopus - Elsevier

Peer review (3 reviews for 2 publications/grants)

Review activity for Journal of physics. (2)
Review activity for Semiconductor science and technology. (1)
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