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Dark-field optical fault inspection of ∼10 nm scale room-temperature silicon single-electron transistors

Nanotechnology
2023-12-10 | Journal article
DOI: 10.1088/1361-6528/acfb10
Contributors: Wenkun He; Kai-Lin Chu; Faris Abualnaja; Mervyn Jones; Zahid Durrani
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Single particle entropy stability and the temperature-entropy diagram in quantum dot transistors

Physical Review Research
2023-07-13 | Journal article
DOI: 10.1103/PhysRevResearch.5.033025
Contributors: Faris Abualnaja; Wenkun He; Aleksey Andreev; Mervyn Jones; Zahid Durrani
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Tunable hybrid silicon single-electron transistor–nanoscale field-effect transistor operating at room temperature

Applied Physics Letters
2023-06-05 | Journal article
DOI: 10.1063/5.0154994
Contributors: Faris Abualnaja; Wenkun He; Kai-Lin Chu; Aleksey Andreev; Mervyn Jones; Zahid Durrani
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Room temperature Szilard cycle and entropy exchange at the Landauer limit in a dopant atom double quantum dot silicon transistor

Journal of Physics D: Applied Physics
2022-07-14 | Journal article
DOI: 10.1088/1361-6463/ac66a8
Contributors: Zahid Durrani; Faris Abualnaja; Mervyn Jones
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Device fabrication for investigating Maxwell's Demon at room-temperature using double quantum dot transistors in silicon

Micro and Nano Engineering
2022-04-01 | Journal article
DOI: 10.1016/j.mne.2022.100114
SOURCE-WORK-ID:

1265937

Part of ISSN: 2590-0072
WOSUID:

WOS:000820702300010
Contributors: Faris Abualnaja; Wenkun He; Mervyn Jones; Zahid Durrani
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Imperial College London

Room-Temperature Measurement of Electrostatically Coupled, Dopant-Atom Double Quantum Dots in Point-Contact Transistors

Physical Review Applied
2019-12-23 | Journal article
DOI: 10.1103/PhysRevApplied.12.064050
Contributors: Faris Abualnaja; Chen Wang; Vlad-Petru Veigang-Radulescu; Jonathan Griffiths; Aleksey Andreev; Mervyn Jones; Zahid Durrani
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Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing

Nanotechnology
2018-12-14 | Journal article
DOI: 10.1088/1361-6528/aae3df
Contributors: Colin Rawlings; Yu Kyoung Ryu; Matthieu Rüegg; Nolan Lassaline; Christian Schwemmer; Urs Duerig; Armin W Knoll; Zahid Durrani; Chen Wang; Dixi Liu et al.
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Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Journal of Applied Physics
2018-10-09 | Journal article
DOI: 10.1063/1.5050773
SOURCE-WORK-ID:

1040779

Part of ISSN: 0021-8979
WOSUID:

WOS:000447148100015
Contributors: Zahid Durrani; Mervyn Jones; Faris Abualnaja; Chen Wang; Marcus Kaestner; Steve Lenk; Claudia Lenk; Ivo Rangelow; Aleksey Andreev
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Imperial College London

Field-Emission Scanning Probe Lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Proceedings of SPIE
2018-01-01 | Conference paper
DOI: 10.1117/12.2299955
SOURCE-WORK-ID:

1058473

Part of ISSN: 0277-786X
WOSUID:

WOS:000454731800003
Contributors: Ivo W Rangelow; Claudia Lenk; Martin Hofmann; Steve Lenk; Tzvetan Ivanov; Ahmad Ahmad; Marcus Kaestner; Elshad Guliyev; Christoph Reuter; Matthias Budden et al.
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Imperial College London

Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

Nanotechnology
2017-11-24 | Journal article
DOI: 10.1088/1361-6528/aa9356
Contributors: Z A K Durrani; M E Jones; C Wang; M Scotuzzi; C W Hagen
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Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

Nanotechnology
2017-03-24 | Journal article
DOI: 10.1088/1361-6528/aa5ddd
SOURCE-WORK-ID:

818334

PMID: 28151725
Part of ISSN: 0957-4484
WOSUID:

WOS:000408177200001
Contributors: Zahid Durrani; M E Jones; C Wang; D Liu; J Griffiths
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Imperial College London

Pattern-generation and pattern-transfer for single-digit nano devices

Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics
2016-11-03 | Journal article
DOI: 10.1116/1.4966556
SOURCE-WORK-ID:

808779

Part of ISSN: 2166-2746
WOSUID:

WOS:000389530000002
Contributors: I W Rangelow; A Ahmad; T Ivanov; M Kaestner; Y Krivoshapkina; T Angelov; S Lenk; C Lenk; V Ishchuk; M Hofmann et al.
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Imperial College London

Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

Applied Physics Letters
2015-11-30 | Journal article
DOI: 10.1063/1.4936757
SOURCE-WORK-ID:

759053

Part of ISSN: 1077-3118
WOSUID:

WOS:000366311900043
Contributors: J Llobet; E Krali; C Wang; J Arbiol; M E Jones; F Perez-Murano; Zahid Durrani
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Imperial College London

Single-electron and quantum confinement limits in length-scaled silicon nanowires

Nanotechnology
2015-07-10 | Journal article
DOI: 10.1088/0957-4484/26/30/305203
SOURCE-WORK-ID:

740738

PMID: 26160889
Part of ISSN: 0957-4484
WOSUID:

WOS:000358675900008
Contributors: Chen Wang; Mervyn E Jones; Zahid Durrani
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Imperial College London

Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays

Applied Physics Letters
2015-02-18 | Journal article
DOI: 10.1063/1.4908569
SOURCE-WORK-ID:

718833

Part of ISSN: 1077-3118
WOSUID:

WOS:000350227300038
Contributors: Kamran Rasool; M A Rafiq; Mushtaq Ahmad; Z Imran; S S Batool; Adnan Nazir; Zahid Durrani; M M Hasan
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Imperial College London

Inelastic electron tunneling spectroscopy for molecular detection

Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics
2014-10-02 | Journal article
DOI: 10.1116/1.4897137
SOURCE-WORK-ID:

706344

Part of ISSN: 2166-2746
WOSUID:

WOS:000345512800015
Contributors: Yasaman Hamidi Zadeh; Zahid Durrani
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Imperial College London

Tailoring transport and dielectric properties by surface passivation of silicon nanowires with Polyacrylic acid/TiO<sub>2</sub> nanoparticles composite

Microelectronic Engineering
2014-05-01 | Journal article
DOI: 10.1016/j.mee.2014.03.040
SOURCE-WORK-ID:

700963

Part of ISSN: 0167-9317
WOSUID:

WOS:000343364400030
Contributors: Kamran Rasool; M A Rafiq; Zahid Durrani
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Imperial College London

Seebeck coefficient of one electron

Journal of Applied Physics
2014-03-07 | Journal article
DOI: 10.1063/1.4867775
SOURCE-WORK-ID:

653640

Part of ISSN: 0021-8979
WOSUID:

WOS:000332730700056
Contributors: Zahid Durrani
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Imperial College London

Seebeck coefficient in silicon nanowire arrays (vol 102, 143102, 2013)

Applied Physics Letters
2013-07-15 | Journal article
DOI: 10.1063/1.4813109
SOURCE-WORK-ID:

604770

Part of ISSN: 0003-6951
WOSUID:

WOS:000322146300147
Contributors: Emiljana Krali; Zahid Durrani
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Imperial College London

Seebeck coefficient in silicon nanowire arrays

Applied Physics Letters
2013-04-08 | Journal article
DOI: 10.1063/1.4800778
SOURCE-WORK-ID:

580024

Part of ISSN: 0003-6951
WOSUID:

WOS:000318268800070
Contributors: E Krali; Zahid Durrani; N Q Lam
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Imperial College London

Scanning Probe Lithography approach for beyond CMOS devices

Proceedings of SPIE
2013-02-28 | Conference paper
DOI: 10.1117/12.2012199
SOURCE-WORK-ID:

580062

Part of ISSN: 0277-786X
WOSUID:

WOS:000323077100024
Contributors: Zahid Durrani; M Jones; M Kaestner; M Hofer; E Guliyev; A Ahmed; J P Zoellner; I W Rangelow; SPIE
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Imperial College London

Scanning probe lithography for electronics at the 5 nm scale

SPIE newsroom
2013-02-19 | Report
SOURCE-WORK-ID:

578682
Contributors: Zahid Durrani; M Kaestner; M Hofer; T Ivanov; I W Rangelow
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Imperial College London

Seebeck coefficient in silicon nanowire arrays

2013-02-04 | Conference paper
SOURCE-WORK-ID:

580061
Contributors: E Krali; C Li; K Fobelets; M Zaremba-Tymieniecki; Zahid Durrani; H Mizuta
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Imperial College London

Electrifying Possibilities

2012-11-30 | Other
SOURCE-WORK-ID:

578681
Contributors: Zahid Durrani; Guardian Newspaper
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Imperial College London

Nanoscale single-electron and quantum dot devices for 'beyond-CMOS' application

2012-10-27 | Conference paper
SOURCE-WORK-ID:

580059
Contributors: Zahid Durrani; X M Mei
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Imperial College London

Seebeck coefficient in silicon nanowire arrays

2012-09-20 | Conference paper
SOURCE-WORK-ID:

580058
Contributors: E Krali; Zahid Durrani; C Vieu
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Imperial College London

Effect of incorporation of zinc sulfide nanoparticles on carrier transport in silicon nanowires

Physica E: Low-Dimensional Systems and Nanostructures
2012-08 | Journal article
DOI: 10.1016/j.physe.2012.08.007
SOURCE-WORK-ID:

533221

Part of ISSN: 1386-9477
WOSUID:

WOS:000310673500030
Contributors: Mushtaq Ahmad; Kamran Rasool; M A Rafiq; M M Hasan; C B Li; Zahid Durrani
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Imperial College London

Electrical transport in polymer covered Si nanowires

IEEE Transactions on Nanotechnology
2012-07 | Journal article
DOI: 10.1109/TNANO.2010.2049746
SOURCE-WORK-ID:

357109

Part of ISSN: 1536-125X
WOSUID:

WOS:000306184400004
Contributors: Kristel Fobelets; Zahid Durrani; P W Ding; N Mohseni Kiasari
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Imperial College London

Enhanced electrical and dielectric properties of polymer covered silicon nanowire arrays

Applied Physics Letters
2012-07-12 | Journal article
DOI: 10.1063/1.4735278
SOURCE-WORK-ID:

458940

Part of ISSN: 0003-6951
WOSUID:

WOS:000306360600079
Contributors: K Rasool; M A Rafiq; C B Li; E Krali; Zahid Durrani; M M Hasan
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Imperial College London

Si1-xGex Nanowire Arrays for Thermoelectric Power Generation

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
2012-06 | Conference paper
DOI: 10.1109/istdm.2012.6222465
SOURCE-WORK-ID:

1201569
Contributors: Bin Xu; Chuanbo Li; Maksym Myronov; Zahid Durrani; Kristel Fobelets
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Imperial College London

High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors

Applied Physics Letters
2012-03-12 | Journal article
DOI: 10.1063/1.3694046
SOURCE-WORK-ID:

438619

Part of ISSN: 0003-6951
WOSUID:

WOS:000302204900068
Contributors: M A Rafiq; K Masubuchi; Zahid Durrani; A Colli; H Mizuta; W I Milne; S Oda
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Imperial College London

Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature

Japanese Journal of Applied Physics
2012-02-06 | Journal article
DOI: 10.1143/JJAP.51.025202
SOURCE-WORK-ID:

419335

Part of ISSN: 0021-4922
WOSUID:

WOS:000300627200051
Contributors: M A Rafiq; K Masubuchi; Zahid Durrani; A Colli; H Mizuta; W I Milne; S Oda
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Imperial College London

Thermoelectric characteristics of SiGe nanowire arrays as a function of Ge concentration

AIP Conference Proceedings
2012-01-01 | Conference paper
DOI: 10.1063/1.4731585
SOURCE-WORK-ID:

577373

Part of ISSN: 0094-243X
WOSUID:

WOS:000313173100102
Contributors: C B Li; B Xu; Zahid Durrani; M Mironov; Kristel Fobelets; NA
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Imperial College London

Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching

Applied Physics Letters
2011 | Journal article
DOI: 10.1063/1.3565971
SOURCE-WORK-ID:

357103

Part of ISSN: 0003-6951
WOSUID:

WOS:000288277200039
Contributors: M Zaremba-Tymieniecki; Zahid Durrani
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Imperial College London

Schottky-barrier modulation of silicon nanowire field-effect transistors prepared by metal-assisted chemical etching

2011 | Conference paper
SOURCE-WORK-ID:

389106
Contributors: Zahid Durrani; M Zaremba-Tymieniecki
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Imperial College London

Influence of chemical modification on the electrical properties of Si nanowire arrays

Advanced Materials Research
2011-01-01 | Conference paper
DOI: 10.4028/www.scientific.net/AMR.160-162.1331
SOURCE-WORK-ID:

355852

Part of ISSN: 1022-6680
WOSUID:

WOS:000289504000241
Contributors: Chuanbo Li; Kristel Fobelets; S N Syed Jalal; Wei A Ng; Zahid Durrani
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Imperial College London

Single-electron devices and circuits in silicon

2010 | Book
SOURCE-WORK-ID:

357097

ISBN: 978-1-84816-413-0
Contributors: Zahid Durrani
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Imperial College London

Field-effect transistors using silicon nanowires prepared by electroless chemical etching

IEEE Electron Device Letters
2010-08-01 | Journal article
DOI: 10.1109/LED.2010.2050572
SOURCE-WORK-ID:

357108

Part of ISSN: 0741-3106
WOSUID:

WOS:000283376800028
Contributors: M Zaremba-Tymieniecki; Chaunbo Li; Kristel Fobelets; Zahid Durrani
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Imperial College London

Electron transport in silicon nanocrystals and nanochains

Microelectronic Engineering
2009 | Journal article
DOI: 10.1016/j.mee.2009.03.123
SOURCE-WORK-ID:

357110

Part of ISSN: 0167-9317
WOSUID:

WOS:000267273300005
Contributors: Zahid Durrani; M A Rafiq
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Imperial College London

Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures

Japanese Journal of Applied Physics
2008 | Journal article
DOI: 10.1143/JJAP.47.4820
SOURCE-WORK-ID:

357112

Part of ISSN: 0021-4922
WOSUID:

WOS:000257260600095
Contributors: Gento Yamahata; Yoshishige Tsuchiya; Shunri Oda; Zahid Durrani; Hiroshi Mizuta
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Imperial College London

Field dependant hopping conduction across silicon nanocrystal films

Journal of Applied Physics
2008 | Journal article
DOI: 10.1063/1.3050332
SOURCE-WORK-ID:

357111

Part of ISSN: 0021-8979
WOSUID:

WOS:000262225100062
Contributors: M A Rafiq; Zahid Durrani; H Mizuta; M M Hassan; S Oda
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Imperial College London

Room temperature single electron charging in single silicon nanochains

Journal of Applied Physics
2008 | Journal article
DOI: 10.1063/1.2887988
SOURCE-WORK-ID:

357113

Part of ISSN: 0021-8979
WOSUID:

WOS:000254025000044
Contributors: M A Rafiq; Zahid Durrani; H Mizuta; A Colli; P Servati; A C Ferrari; W I Milne; S Oda
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Imperial College London

Nanosilicon single-electron transistors and memory

2007 | Book chapter
SOURCE-WORK-ID:

357116

Part of ISBN: 978-0-08-044528-1
Contributors: Zahid Durrani; H Ahmed; V Kumar
Source: check_circle
Imperial College London

Fabrication of vertical nanopillar devices

Micro- and Nano-Engineering 2006, 17-20 September 2006, Barcelona, Spain.
2006 | Conference paper
SOURCE-WORK-ID:

175665
Contributors: Rafiq, M A; Mizuta, H; Uno, S; Durrani, Z
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Imperial College London

Hopping conduction in size-controlled Si nanocrystals

Journal of Applied Physics
2006 | Journal article
DOI: 10.1063/1.2209808
SOURCE-WORK-ID:

59169

Part of ISSN: 0021-8979
Contributors: Rafiq, M A; Tsuchiya, Y; Mizuta, H; Oda, S; Uno, S; Durrani, Z; Milne, W I
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Imperial College London

Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints

Physical Review B: Condensed Matter and Materials Physics
2006 | Journal article
DOI: 10.1103/physrevb.74.035316
SOURCE-WORK-ID:

134310

Part of ISSN: 1098-0121
Contributors: Khalafalla, M A H; Mizuta, H; Durrani, Z
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Imperial College London

Catalyst-free Silicon Nanowires and Nanocrystals: Growth and Electron Transport

6th International Conference on the Science and application of Nanotubes (NT06), 26 June 26 – 1 July 2005, Göteborg, Sweden.
2005 | Conference paper
SOURCE-WORK-ID:

96485
Contributors: Durrani, Z; Rafiq, M A; Colli, A; Fasoli, A; Ferrari, A C; Robertson, J; Milne, W I
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Imperial College London

Charge injection and trapping in silicon nanocrystals

Applied Physics Letters
2005 | Journal article
DOI: 10.1063/1.2119431
SOURCE-WORK-ID:

144048

Part of ISSN: 0003-6951
Contributors: Rafiq, M A; Tsuchiya, Y; Mizuta, H; Oda, S; Uno, S; Durrani, Z; Milne, W I
Source: check_circle
Imperial College London

Single-electron devices in silicon

2005 Silicon Nanoelectronics Workshop, 12-13 June, Kyoto, Japan
2005 | Conference paper
SOURCE-WORK-ID:

107580
Contributors: Durrani, Z
Source: check_circle
Imperial College London

Single-electron transistors, memory and logic in silicon

2nd Open Workshop on the Fusion of Bio-, Nano- and Semiconductor-Technologies, 6-7 October, Osaka.
2005 | Conference paper
SOURCE-WORK-ID:

57638
Contributors: Durrani, Z
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Imperial College London
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