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High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique

physica status solidi (a)
2020-04 | Journal article
Contributors: Zhongyang Li; Lin Du; Jianshe Lou; Yun Jiang; Kunshu Wang; Wei Wen; Zhizhe Wang; Shenglei Zhao; Jincheng Zhang; Yue Hao
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