Personal information

Other IDs

SciProfiles: 312601
ResearcherID: N-7027-2014
Scopus Author ID: 55523101406

Keywords

Schottky diode, Silicon Carbide, ion implantation, electronic devices

Activities

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Employment (2)

Rutgers University New Brunswick: New Brunswick, NJ, US

Research Scientist (School of Engineering)
Employment
Source: Self-asserted source
Vibhor Kumar

Northern Illinois University: DeKalb, Illinois, US

Postdoc (Electrical Engineering)
Employment
Source: Self-asserted source
Vibhor Kumar

Education and qualifications (1)

Central Electronics Engineering Research Institute CSIR: Pilani, Rajasthan, IN

Ph.D (Sensors and Nanotechnology)
Qualification
Source: Self-asserted source
Vibhor Kumar

Professional activities (1)

Department of Science and Technology: Delhi, Delhi, IN

2018 | Young Scientist
Distinction
Source: Self-asserted source
Vibhor Kumar

Works (30)

Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication

International Journal of Molecular Sciences
2025-03-26 | Journal article
DOI: 10.3390/ijms26073027
Contributors: Prithvi Basu; Jyoti Verma; Vishnuram Abhinav; Ratneshwar Kumar Ratnesh; Yogesh Kumar Singla; Vibhor Kumar
Source: check_circle
Crossref

Triple and Quadruple Metal Gate Work Function Engineering to Improve the Performance of Junctionless Double Surrounding Gate In0.53Ga0.47As Nanotube MOSFET for the Upcoming Sub 3 nm Technology Node

Physics Letters A
2024-10 | Journal article
DOI: 10.1016/j.physleta.2024.130011
Contributors: Sanjay; Vibhor Kumar; Anil Vohra
Source: check_circle
Crossref

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

International Journal of Precision Engineering and Manufacturing
2024-09 | Journal article
DOI: 10.1007/s12541-024-01023-6
Contributors: Sanjay; Vibhor Kumar; Anil Vohra
Source: check_circle
Crossref

Correction to: Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node

Silicon
2024-06 | Journal article
DOI: 10.1007/s12633-024-02955-4
Contributors: Sanjay; Vibhor Kumar; Anil Vohra
Source: check_circle
Crossref

Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node

Silicon
2024-06 | Journal article
DOI: 10.1007/s12633-024-02919-8
Contributors: Sanjay; Vibhor Kumar; Anil Vohra
Source: check_circle
Crossref

Triple-metal gate work function engineering to improve the performance of junctionless cylindrical gate-all-around Si nanowire MOSFETs for the upcoming sub-3-nm technology node

Journal of Computational Electronics
2024-04 | Journal article
DOI: 10.1007/s10825-024-02148-7
Contributors: Sanjay; Vibhor Kumar; Anil Vohra
Source: check_circle
Crossref

Performance Comparison Between Inversion Mode and Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using Dual Metal Gate Work Function Engineering for Upcoming Sub 5 nm Technology Node

Silicon
2024-02 | Journal article
DOI: 10.1007/s12633-023-02730-x
Contributors: Sanjay; Vibhor Kumar; Anil Vohra
Source: check_circle
Crossref

Core-shell oxide nanoparticles and their biomedical applications

Oxides for Medical Applications
2023 | Book chapter
Part of DOI: 10.1016/B978-0-323-90538-1.00016-9
EID:

2-s2.0-85162629736
Contributors: Abhinav, V.; Ranjan, P.; Mahapatra, A.; Belwanshi, V.; Kumar, V.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Pinhole-Free Ultrathin Silicon Oxide Layer by Ozone-Dissolved Deionized Water

Physica Status Solidi - Rapid Research Letters
2023 | Journal article
DOI: 10.1002/pssr.202200325
EID:

2-s2.0-85140483985

Part of ISSN: 18626270 18626254
Contributors: Kumar, V.; Gao, M.; Zin, N.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

UV-Ozone Oxide for Surface Clean, Passivation, and Tunneling Contact Applications of Silicon Solar Cells

IEEE Journal of Photovoltaics
2023 | Journal article
DOI: 10.1109/JPHOTOV.2023.3244370
Contributors: Munan Gao; Vibhor Kumar; Winston Schoenfeld; Ngwe Zin
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Interfacial and structural analysis of MeV heavy ion irradiated SiC

Applied Nanoscience
2023-05 | Journal article
DOI: 10.1007/s13204-021-01921-5
Contributors: Vibhor Kumar; Sandeep Kumar; A. S. Maan; Jamil Akhtar
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Interface improvement of epitaxial 4H-SiC based Schottky didoes by selective heavy ion irradiation

Applied Nanoscience
2023-01 | Journal article
DOI: 10.1007/s13204-020-01608-3
Contributors: Vibhor Kumar; Sandeep Kumar; A. S. Maan; Jamil Akhtar
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Defect levels in high energy heavy ion implanted 4H-SiC

Materials Letters
2022 | Journal article
DOI: 10.1016/j.matlet.2021.131150
EID:

2-s2.0-85118513021

Part of ISSN: 18734979 0167577X
Contributors: Kumar, V.; Maan, A.S.; Akhtar, J.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Design and Simulation Study of a Piezoelectric Microcantilever-Based Energy Harvester for Ambient Vibrations

Lecture Notes in Mechanical Engineering
2022 | Book
DOI: 10.1007/978-981-16-8341-1_34
EID:

2-s2.0-85129863623

Part of ISSN: 21954364 21954356
Contributors: Belwanshi, V.; Abhinav, V.; Kumar, V.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Development of Highly Uniform and Reproducible DI-O<sub>3</sub>layers for Photovoltaic Applications and Beyond

Conference Record of the IEEE Photovoltaic Specialists Conference
2022 | Conference paper
DOI: 10.1109/PVSC48317.2022.9938655
EID:

2-s2.0-85142813447

Part of ISSN: 01608371
Contributors: Gao, M.; Kumar, V.; Zin, N.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Electrical conductivity and relaxation phenomena in Li<sub>2</sub>O·B<sub>2</sub>O<sub>3</sub> based glass and glass-ceramic: A comprehensive and comparative analysis

Journal of Physics and Chemistry of Solids
2022 | Journal article
DOI: 10.1016/j.jpcs.2022.110911
EID:

2-s2.0-85136592659

Part of ISSN: 00223697
Contributors: Kumar, S.; Kumari, S.; Kumar, V.; Dalal, J.; Kumar, A.; Ohlan, A.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Graphene piezoresistive flexible MEMS force sensor for bi-axial micromanipulation applications

Microsystem Technologies
2022 | Journal article
DOI: 10.1007/s00542-022-05312-w
EID:

2-s2.0-85132100801

Part of ISSN: 14321858 09467076
Contributors: Lamba, M.; Chaudhary, H.; Singh, K.; Keshyep, P.; Kumar, V.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Excellent uv‐light triggered photocatalytic performance of zno.Sio2 nanocomposite for water pollutant compound methyl orange dye

Nanomaterials
2021 | Journal article
DOI: 10.3390/nano11102548
EID:

2-s2.0-85115806165

Part of ISSN: 20794991
Contributors: Rohilla, S.; Gupta, A.; Kumar, V.; Kumari, S.; Petru, M.; Amor, N.; Noman, M.T.; Dalal, J.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Investigation of structural and impedance spectroscopic properties of borate glasses with high Li+ concentration

Solid State Ionics
2021-10 | Journal article
DOI: 10.1016/j.ssi.2021.115704
Part of ISSN: 0167-2738
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

LnFe0.5Cr0.5O3 based perovskites showing multiferroic properties and polarization induced photoelectrochemical activity

Journal of Solid State Chemistry
2021-07 | Journal article
DOI: 10.1016/j.jssc.2021.122200
Part of ISSN: 0022-4596
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Effect of Na<sub>2</sub>O on physical, structural and electrical properties of borate glasses

Materials Today: Proceedings
2020 | Conference paper
DOI: 10.1016/j.matpr.2020.12.688
EID:

2-s2.0-85107400901

Part of ISSN: 22147853
Contributors: Tijaria, M.; Sharma, Y.; Kumar, V.; Dahiya, S.; Dalal, J.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Epitaxial 4H–SiC based Schottky diode temperature sensors in ultra-low current range

Vacuum
2020-12 | Journal article
DOI: 10.1016/j.vacuum.2020.109590
Part of ISSN: 0042-207X
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 3)‎

Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions

Materials Science in Semiconductor Processing
2020-08 | Journal article
DOI: 10.1016/j.mssp.2020.105108
Part of ISSN: 1369-8001
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Improvement in reverse bias leakage current of Ni/4H-nSiC Schottky barrier diodes via MeV selective ion irradiation

IOP Conference Series: Materials Science and Engineering
2018-03 | Journal article
DOI: 10.1088/1757-899x/331/1/012016
Part of ISSN: 1757-8981
Part of ISSN: 1757-899X
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Tailoring Surface and Electrical Properties of Ni/4H-nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation

physica status solidi (a)
2018-03 | Journal article
DOI: 10.1002/pssa.201700555
Part of ISSN: 1862-6300
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2 /4H-nSiC Schottky barrier diodes

physica status solidi (a)
2016-01 | Journal article
DOI: 10.1002/pssa.201532454
Part of ISSN: 1862-6300
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2015-09 | Journal article
DOI: 10.1116/1.4929890
Part of ISSN: 2166-2746
Part of ISSN: 2166-2754
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2014-07 | Journal article
DOI: 10.1116/1.4884756
Part of ISSN: 2166-2746
Part of ISSN: 2166-2754
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Selective SHI irradiation for mesa type edge termination in semiconductor planar junction

Journal of Physics: Conference Series
2013-04-10 | Journal article
DOI: 10.1088/1742-6596/423/1/012057
Part of ISSN: 1742-6588
Part of ISSN: 1742-6596
Source: Self-asserted source
Vibhor Kumar
grade
Preferred source (of 2)‎

Simulation based analysis of temperature effect on breakdown voltage of ion implanted Co/n-Si schottky diode

Journal of Nano- and Electronic Physics
2012 | Journal article
EID:

2-s2.0-84871976343

Part of ISSN: 20776772
Contributors: Kumar, V.; Akhtar, J.; Singh, K.; Maan, A.S.
Source: Self-asserted source
Vibhor Kumar via Scopus - Elsevier

Peer review (19 reviews for 9 publications/grants)

Review activity for Biomass conversion and biorefinery. (1)
Review activity for Journal of applied physics. (1)
Review activity for Journal of electronic materials. (2)
Review activity for Journal of vacuum science and technology. (6)
Review activity for Materials. (3)
Review activity for Memories, materials, devices, circuits and systems. (2)
Review activity for Microelectronics and reliability. (1)
Review activity for Micromachines. (2)
Review activity for Vacuum. (1)
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