Personal information

Emails & domains

Verified email addresses

Verified email domains

Other IDs

ResearcherID: T-5251-2017

Keywords

Nano Structures, Theoretical modeling, Carbon nano tubes, Resonant tunneling

Countries

Egypt

Activities

Collapse all

Employment (1)

Mansoura University: Mansoura, Egypt, EG

2010-09-01 to present
Employment
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Education and qualifications (3)

Mansoura University: Mansoura, Egypt, EG

Ph.D (Physics )
Education
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Mansoura University: Mansoura , Egypt, Egypt, EG

1975-09-01 to present | Ph.D. / Professor of Physics (Physics )
Education
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Mansoura University: Mansoura, Egypt, EG

1975-09 to present | Ph.D (Physics )
Education
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Professional activities (5)

University of Maine: Orono, Maine, USA., US

Membership
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

The University of Newcastle Physics Program: Newcastle, Newcastle, UK., AU

Invited position
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

The Egyptian Materials Research Society: Cairo, Cairo, EG

Membership
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

AMIDEAST: Washington, DC, US

Distinction
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

American Physical Society: College Park, Maryland, US

Membership
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Works (35)

Resonant tunneling frequency and current in a nanostructured diode with a two-fold right triangular barrier

2024-09-24 | Preprint
DOI: 10.21203/rs.3.rs-5130309/v1
Contributors: A. M. Elabsy
Source: check_circle
Crossref

Resonant tunneling of electrons in biased symmetric triangular double barrier nanostructure triodes

Physica Scripta
2023-10-01 | Journal article
DOI: 10.1088/1402-4896/acf4d1
Contributors: A M Elabsy; M T Attia
Source: check_circle
Crossref

Quasi-resonant tunneling states in triangular double-barrier nanostructures

2023-05-05 | Preprint
DOI: 10.21203/rs.3.rs-2850811/v1
Contributors: Abdelsalam Elabsy; Mohamed Attia
Source: check_circle
Crossref

Impact of pressure on the resonant energy and resonant frequency for two barriers Ga<sub>1−x</sub>Al<sub>x</sub>As/GaAs nanostructures

Physica Scripta
2023-01-01 | Journal article
DOI: 10.1088/1402-4896/aca5cb
Part of ISSN: 0031-8949
Part of ISSN: 1402-4896
Contributors: Elkenany B. Elkenany; A M Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Comparative investigation between complex energy and transfer matrix techniques for quasi-energy states in heterostructure materials

Journal of Materials Science: Materials in Electronics
2022-10 | Journal article
DOI: 10.1007/s10854-022-09025-8
Part of ISSN: 0957-4522
Part of ISSN: 1573-482X
Contributors: Elkenany B. Elkenany; A. M. Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effect of the nonparabolicity on the resonant lifetimes and resonant energies of symmetric GaAs/AlxGa1-xAs double barrier nanostructures

Physica B: Condensed Matter
2022-05 | Journal article
DOI: 10.1016/j.physb.2022.413711
Part of ISSN: 0921-4526
Contributors: A.M. Elabsy; Elkenany B. Elkenany
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Optoelectronic properties of GaAs1-xPx alloys under the influence of temperature and pressure

Superlattices and Microstructures 52 (2), 336-348
2012 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Pressure dependence of the electronic structure in Ge, GaP and InP semiconductors at room temperature

Indian Journal of Physics 86 (5), 363-369
2012 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Pressure and Temperature Dependent Form Factors of the Empirical Pseudopotential Method for the Electronic Structures of Nanomaterials

Advances in Condensed Matter and Materials,
2011 | Book chapter
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Pressure response to electronic structures of bulk semiconductors at room temperature

Physica B: Condensed Matter 405 (17), 3709-3713
2010 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Thermal response to electronic structures of bulk semiconductors

Physica B 405, 266-271
2010 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Transmission Coefficients for Tunneling of Electrons and Holes in Biased Ga1−xAlxAs–GaAs–Ga1−xAlxAs Triple Barriers Semiconductor Heterostructures

ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference.
2009-06-05 | Conference paper
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Structure of electropolymerized polyacrylonitrile

Journal of Polymer Materials 21(4):445-454
2004-12 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Influence of Heat on Impurity States in an Artificial Semiconductor Atom

Egypt. J. Sol., Vol. 23, 267-275 (2000)
2000 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effective mass dependence of resonant quasi-level lifetime in GaAs–AlxGa1−xAs double-barrier structures

Physica B: Condensed Matter
2000-11 | Journal article
DOI: 10.1016/s0921-4526(00)00472-5
Part of ISSN: 0921-4526
Contributors: A.M. Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effect of Temperature on the Binding Energy of a Confined Impurity to a Spherical Semiconductor Quantum Dot

Physica Scripta
1999-04-01 | Journal article
DOI: 10.1238/physica.regular.059a00328
Part of ISSN: 0031-8949
Part of ISSN: 1402-4896
Contributors: A M Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Combined Effect of the Screening of a Donor Ion and the Conduction Band Nonparabolicity on the Binding Energy of a Donor at the Center of a Spherical Quantum Dot"

Intr. J. Quantum Chem., Quantum Chem. Symp. 30, 1719-1722 (1996)
1996 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Screening of Donors in GaAs/Ga1-x Alx As Quantum Dot

Croatica Chemica Acta 68, 309-313 (1995)
1995 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effect of Nonparabolicity of the GaAs Conduction Band on the Binding Energy of a Hydrogenic Donor in a GaAs/Ga1-x Alx As Quantum Dot

J. Math. Chem. 16, 309-313 (1994)
1994 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effect of the Gamma -X crossover on the binding energies of confined donors in single GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As quantum-well microstructures

Journal of Physics: Condensed Matter
1994-11-14 | Journal article
DOI: 10.1088/0953-8984/6/46/019
Part of ISSN: 0953-8984
Part of ISSN: 1361-648X
Contributors: A M Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

"Maximum entropy for linear Boltzmann equation"

J. Phys. D: Appl. Phys. 26, 909-912 (1993)
1993 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Hydrostatic pressure dependence of binding energies for donors in quantum well heterostructures

Physica Scripta
1993-09-01 | Journal article
DOI: 10.1088/0031-8949/48/3/019
Part of ISSN: 0031-8949
Part of ISSN: 1402-4896
Contributors: A M Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Band mixing dependence of the lowest energy states in uncoupled quantum wells

Superlattices and Microstructures
1993-07 | Journal article
DOI: 10.1006/spmi.1993.1104
Part of ISSN: 0749-6036
Contributors: A.M. Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

A Fourier Transform Solution of Radiation Transfer in a Spherical Inhomogeneous Medium

Astrophysics and Space Sci. 196, 143-152 (1992).
1992 | Journal issue or edition
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Response of Binding Energy of Acceptors in Quantum Wells to Multiple Images

Egypt. J. Solids, Vol. 15, 157 (1992)
1992 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Temperature dependence of shallow donor states in GaAs-Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>As compositional superlattice

Physica Scripta
1992-11-01 | Journal article
DOI: 10.1088/0031-8949/46/5/015
Part of ISSN: 0031-8949
Part of ISSN: 1402-4896
Contributors: A M Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effect of image forces on the binding energies of impurity atoms in Ga1−xAlxAs/GaAs/Ga1−xAlxAs quantum wells

Physical Review B
1992-07-15 | Journal article
DOI: 10.1103/physrevb.46.2621
Part of ISSN: 0163-1829
Part of ISSN: 1095-3795
Contributors: A. M. Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Response of binding energy of donors in semiconductor quantum wells to realistic multiple images

Physica Scripta
1992-03-01 | Journal article
DOI: 10.1088/0031-8949/45/3/013
Part of ISSN: 0031-8949
Part of ISSN: 1402-4896
Contributors: A M Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Multiple images theory in superlattices

Journal of Applied Physics
1991-12-15 | Journal article
DOI: 10.1063/1.349728
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: A. M. Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

A numerical investigation of model effective mass Hamiltonians and the associated wave function matching conditions for abrupt heterojunctions

Semicond. Sci. Technol. 3, 1010-1014 (1989)
1989 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effective mass hamiltonians and wavefunction matching conditions for abrupt heterojunctions

Journal of Molecular Structure 202, 337-346 (1989)
1989 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Effect of the Nonparabolicity of the GaAs Conduction Band on the Binding Energy of off Center Hydrogenic Donors in a Ga1-xAlxAs/GaAs/Ga1-xAlxAs Quantum Well

Int. J. Quantum Chem., Quantum Chem. Symp. 22, 25 (1988).
1988 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Dielectric response to an acceptor ion in a Ga1-xAlxAs/GaAs/Ga1-xAlxAs quantum well

Int. J. Quantum Chem., Quantum Chem. Symp. 21, 79-87 (1987).
1987 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Dielectric response to a donor ion in a Ga1-xAlxAs/GaAs/Ga1-xAlxAs quantum well of finite depth

Int. J. Quantum Chem., Quantum Chem. Symp. 20, 325-333 (1986).
1986 | Journal article
Contributors: Abdelsalam Mohamed Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Dielectric response to a donor ion in a Ga1-xAlxAs-GaAs-Ga1-xAlxAs quantum well of infinite depth

Physical Review B
1985-11-15 | Journal article
DOI: 10.1103/physrevb.32.6498
Part of ISSN: 0163-1829
Contributors: P. Csavinszky; A. M. Elabsy
Source: Self-asserted source
Abdelsalam Mohamed Elabsy

Peer review (3 reviews for 2 publications/grants)

Review activity for Micro and nanostructures. (2)
Review activity for Results in surfaces and interfaces. (1)
How many people are using ORCID?