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Works (4)

The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures

physica status solidi (a)
2021-01 | Journal article
DOI: 10.1002/pssa.202000511
Contributors: Felix Winkler; Carsten Strobel; Christian Wenzel; Johann W. Bartha
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Design, Fabrication, and Comparison of 3D Multimode Optical Interconnects on Silicon Interposer

Journal of Lightwave Technology
2020-07-01 | Journal article
DOI: 10.1109/JLT.2020.2971394
Contributors: Sujay Charania; Niels Neumann; Sebastian Killge; Felix Winkler; Zaid Al-Husseini; Laszlo Szilagyi; Ronny Henker; Frank Ellinger; Dirk Plettemeier; Johann W. Bartha
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In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2020-01-01 | Journal article
DOI: 10.1116/1.5132891
Contributors: Johanna Reif; Martin Knaut; Sebastian Killge; Felix Winkler; Matthias Albert; Johann W. Bartha
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Demonstration of a graphene-base heterojunction transistor with saturated output current

Journal of Applied Physics
2019-06-21 | Journal article
DOI: 10.1063/1.5093167
Contributors: C. Strobel; C. A. Chavarin; B. Leszczynska; S. Leszczynski; F. Winkler; S. Killge; S. Völkel; K. Richter; A. Hiess; M. Knaut et al.
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