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Works (7)

Influence of Short-Circuit Time on Short-Circuit Failure Modes of Planar Silicon Carbide MOSFETs

IEEE Transactions on Device and Materials Reliability
2024 | Journal article
Contributors: JiaHui Meng; Peng Sun; YuMeng Cai; HaoRan Zhang; ZhiBin Zhao; Zhen Xin
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Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability

IEEE Transactions on Power Electronics
2024-11 | Journal article
Contributors: Yumeng Cai; Peng Sun; Yuankui Zhang; Cong Chen; Zhibin Zhao; Xuebao Li; Lei Qi; Zhong Chen; Hans-Peter Nee
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Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation

IEEE Transactions on Power Electronics
2024-08 | Journal article
Contributors: Yumeng Cai; Peng Sun; Cong Chen; Yuankui Zhang; Zhibin Zhao; Xuebao Li; Lei Qi; Zhong Chen; Hans-Peter Nee
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Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split C–V Method Under Bias Temperature Instability Conditions

IEEE Transactions on Power Electronics
2023-05 | Journal article
Contributors: Yumeng Cai; Cong Chen; Zhibin Zhao; Peng Sun; Xuebao Li; Manhong Zhang; Hui Wang; Zhong Chen; Hans-Peter Nee
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Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs

IEEE Transactions on Device and Materials Reliability
2021-12 | Journal article
Contributors: Bin Zhao; Qiuping Yu; Peng Sun; Yumeng Cai; Zhibin Zhao
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Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs

IEEE Transactions on Electron Devices
2021-10 | Journal article
Contributors: Yumeng Cai; Hao Xu; Peng Sun; Junji Ke; Erping Deng; Zhibin Zhao; Xuebao Li; Zhong Chen
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Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs

IEEE Transactions on Device and Materials Reliability
2021-09 | Journal article
Contributors: Bin Zhao; Peng Sun; Qiuping Yu; Yumeng Cai; Zhibin Zhao
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Peer review (1 review for 1 publication/grant)

Review activity for Microelectronics and reliability. (1)