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Employment (1)

National Renewable Energy Laboratory: Golden, CO, US

2020-10 to present | Researcher III (Materials, Chemical, and Computational Science)
Employment
Source: Self-asserted source
M. Brooks Tellekamp

Education and qualifications (3)

National Renewable Energy Laboratory: Golden, CO, US

2018-03-12 to 2020-10 | Postdoctoral (Materials and Chemical Science and Technology)
Education
Source: Self-asserted source
M. Brooks Tellekamp

Georgia Institute of Technology: Atlanta, Ga, US

2012-08 to 2017-12 | PhD (Electrical Engineering)
Education
Source: Self-asserted source
M. Brooks Tellekamp

Georgia Institute of Technology: Atlanta, GA, US

2007-08 to 2012-05 | B.S. (Electrical and Computer Engineering)
Education
Source: Self-asserted source
M. Brooks Tellekamp

Works (50 of 57)

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Page 1 of 2

Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes

APL Energy
2025-03-01 | Journal article
DOI: 10.1063/5.0251435
Contributors: Kingsley Egbo; William A. Callahan; Shahadat Sohel; Chris Chae; Brooks Tellekamp; Jinwoo Hwang; Andriy Zakutayev
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Erratum: “Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates” [Appl. Phys. Lett. 125, 172106 (2024)]

Applied Physics Letters
2025-02-10 | Journal article
DOI: 10.1063/5.0259706
Contributors: Stephen Schaefer; Michelle Smeaton; Kingsley Egbo; Syed Hasan; William Callahan; Glenn Teeter; Andriy Zakutayev; M. Brooks Tellekamp
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Basin-Size Mapping: Prediction of Metastable Polymorph Synthesizability Across TaC–TaN Alloys

Journal of the American Chemical Society
2025-02-05 | Journal article
DOI: 10.1021/jacs.4c15441
Contributors: Andrew Novick; Quan Nguyen; Matthew Jankousky; M. Brooks Tellekamp; Eric S. Toberer; Vladan Stevanović
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Low leakage current in heteroepitaxial Al0.7Sc0.3N ferroelectric films on GaN

Physical Review Applied
2025-01-17 | Journal article
DOI: 10.1103/PhysRevApplied.23.014036
Contributors: Keisuke Yazawa; Charles Evans; Elizabeth C. Dickey; M. Brooks Tellekamp; Geoff L. Brennecka; Andriy Zakutayev
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Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3375830
Contributors: Olivia D. Schneble; Jeramy D. Zimmerman; M. Brooks Tellekamp
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Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1−x)2O3 alloys

Journal of Materials Chemistry A
2024 | Journal article
DOI: 10.1039/D3TA07220G
Contributors: Stephen Schaefer; Davi Febba; Kingsley Egbo; Glenn Teeter; Andriy Zakutayev; Brooks Tellekamp
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Electrically-driven IMT and volatile memristor behavior in NdNiO3 films

Journal of Physics D: Applied Physics
2024-12-06 | Journal article
DOI: 10.1088/1361-6463/ad714e
Contributors: O D Schneble; I A Leahy; J D Zimmerman; M B Tellekamp
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Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates

Applied Physics Letters
2024-10-21 | Journal article
DOI: 10.1063/5.0238259
Contributors: Stephen Schaefer; Michelle Smeaton; Kingsley Egbo; Syed Hasan; William Callahan; Glenn Teeter; Andriy Zakutayev; M. Brooks Tellekamp
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Designing TaC Virtual Substrates for Vertical AlxGa1−xN Power Electronics Devices

PRX Energy
2024-09-27 | Journal article
DOI: 10.1103/PRXEnergy.3.033007
Contributors: Dennice M. Roberts; Jordan A. Hachtel; Nancy M. Haegel; Moira K. Miller; Anthony D. Rice; M. Brooks Tellekamp
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Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Journal of Physics D: Applied Physics
2024-09-20 | Journal article
DOI: 10.1088/1361-6463/ad54ce
Contributors: Moira K Miller; David Diercks; M Brooks Tellekamp
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NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature

Applied Physics Letters
2024-04-22 | Journal article
DOI: 10.1063/5.0194540
Contributors: Kingsley Egbo; Emily M. Garrity; William A. Callahan; Chris Chae; Cheng-Wei Lee; Brooks Tellekamp; Jinwoo Hwang; Vladan Stevanovic; Andriy Zakutayev
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Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting

Journal of Applied Physics
2024-02-21 | Journal article
DOI: 10.1063/5.0187547
Contributors: Jacob J. Cordell; Stephan Lany; M. Brooks Tellekamp
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Gallium Oxide Heterojunction Diodes for 400 °C High-Temperature Applications

Physica Status Solidi (A) Applications and Materials Science
2023 | Journal article
DOI: 10.1002/pssa.202300535
EID:

2-s2.0-85171988016

Part of ISSN: 18626319 18626300
Contributors: Sohel, S.H.; Kotecha, R.; Khan, I.S.; Heinselman, K.N.; Narumanchi, S.; Tellekamp, M.B.; Zakutayev, A.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions

Journal of Materials Chemistry C
2023 | Journal article
DOI: 10.1039/D3TC02425C
Contributors: M. Brooks Tellekamp; M. K. Miller; Lin Zhou; Adele Tamboli
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Composition Dependent Electrochemical Properties of Earth-Abundant Ternary Nitride Anodes

arXiv
2022 | Other
DOI: 10.48550/arXiv.2207.07585
EID:

2-s2.0-85134751169

Part of ISSN: 23318422
Contributors: Tellekamp, M.B.; Osella, A.; Heinselman, K.N.; Tamboli, A.C.; Ban, C.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Designing low-cost TaC virtual substrates for $Al_xGa_{1-x}N$ epitaxy

2022 | Preprint
DOI: 10.48550/ARXIV.2208.11769
Contributors: M. Brooks Tellekamp
Source: Self-asserted source
M. Brooks Tellekamp
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Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance

arXiv
2022 | Other
DOI: 10.48550/arxiv.2204.00112
EID:

2-s2.0-85171214707

Part of ISSN: 23318422
Contributors: Sohel, S.H.; Kotecha, R.; Khan, I.S.; Heinselman, K.N.; Narumanchi, S.; Tellekamp, M.B.; Zakutayev, A.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Reactive phosphine combinatorial co-sputtering of cation disordered ZnGeP2 films

Journal of Materials Chemistry C
2022 | Journal article
DOI: 10.1039/D1TC04695K
Contributors: Rekha R. Schnepf; Andrea Crovetto; Prashun Gorai; Anna Park; Megan Holtz; Karen N. Heinselman; Sage R. Bauers; M. Brooks Tellekamp; Andriy Zakutayev; Ann L. Greenaway et al.
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Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

arXiv
2022 | Other
DOI: 10.48550/arxiv.2204.09158
EID:

2-s2.0-85170903127

Part of ISSN: 23318422
Contributors: Garrity, E.; Lee, C.-W.; Gorai, P.; Tellekamp, B.; Zakutayev, A.; Stevanović, V.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Computational Identification of Ternary Wide-Band-Gap Oxides for High-Power Electronics

PRX Energy
2022-12-20 | Journal article
DOI: 10.1103/PRXEnergy.1.033006
Contributors: Emily M. Garrity; Cheng-Wei Lee; Prashun Gorai; M. Brooks Tellekamp; Andriy Zakutayev; Vladan Stevanović
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Simulated Structural and Electronic Properties of Cation-Disordered ZnGeN 2 and its Interface with GaN

Physical Review Applied
2022-12-12 | Journal article
DOI: 10.1103/PhysRevApplied.18.064030
Contributors: Jacob J. Cordell; Moira K. Miller; M. Brooks Tellekamp; Adele Tamboli; Garritt J. Tucker; Stephan Lany
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Epitaxial ZnGeP2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine

Crystal Growth & Design
2022-10-05 | Journal article
DOI: 10.1021/acs.cgd.2c00723
Contributors: Rekha R. Schnepf; M. Brooks Tellekamp; Theresa Saenz; John S. Mangum; Edwin Supple; Dennice M. Roberts; Craig L. Perkins; Karen N. Heinselman; Brian P. Gorman; Ann L. Greenaway et al.
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Composition dependent electrochemical properties of earth-abundant ternary nitride anodes

APL Materials
2022-04-01 | Journal article
DOI: 10.1063/5.0083998
Contributors: M. Brooks Tellekamp; Anna Osella; Karen N. Heinselman; Adele C. Tamboli; Chunmei Ban
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Heteroepitaxial ZnGeN2 on AlN: Growth, Structure, and Optical Properties

Crystal Growth & Design
2022-02-02 | Journal article
DOI: 10.1021/acs.cgd.1c01232
Contributors: M. Brooks Tellekamp; Moira K. Miller; Anthony D. Rice; Adele C. Tamboli
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Metal chalcogenides for neuromorphic computing: emerging materials and mechanisms

Nanotechnology
2021-09-10 | Journal article
DOI: 10.1088/1361-6528/abfa51
Contributors: Sage R Bauers; M Brooks Tellekamp; Dennice M Roberts; Breanne Hammett; Stephan Lany; Andrew J Ferguson; Andriy Zakutayev; Sanjini U Nanayakkara
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Ternary Nitride Materials: Fundamentals and Emerging Device Applications

Annual Review of Materials Research
2021-07-01 | Journal article
DOI: 10.1146/annurev-matsci-080819-012444
Part of ISSN: 1531-7331
Part of ISSN: 1545-4118
Source: Self-asserted source
M. Brooks Tellekamp
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Epitaxy of LiNbO3: Historical Challenges and Recent Success

Crystals
2021-04-09 | Journal article
DOI: 10.3390/cryst11040397
Contributors: Bill Zivasatienraj; M. Brooks Tellekamp; W. Alan Doolittle
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Growth and characterization of homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> layers

arXiv
2020 | Other
DOI: 10.48550/arxiv.2004.08470
EID:

2-s2.0-85170905591

Part of ISSN: 23318422
Contributors: Tellekamp, M.B.; Heinselman, K.N.; Harvey, S.; Khan, I.; Zakutayev, A.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Heteroepitaxial integration of ZnGeN2 on GaN buffers using molecular beam epitaxy

arXiv
2020 | Other
DOI: 10.48550/arxiv.2002.03980
EID:

2-s2.0-85171100432

Part of ISSN: 23318422
Contributors: Brooks Tellekamp, M.; Melamed, C.L.; Norman, A.G.; Tamboli, A.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Using resonant energy X-ray diffraction to extract chemical order parameters in ternary semiconductors

Journal of Materials Chemistry C
2020 | Journal article
DOI: 10.1039/C9TC06699C
Contributors: Rekha R. Schnepf; Ben L. Levy-Wendt; M. Brooks Tellekamp; Brenden R. Ortiz; Celeste L. Melamed; Laura T. Schelhas; Kevin H. Stone; Michael F. Toney; Eric S. Toberer; Adele C. Tamboli
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Growth and characterization of homoepitaxial β-Ga2O3 layers

Journal of Physics D: Applied Physics
2020-11-25 | Journal article
DOI: 10.1088/1361-6463/aba6b8
Contributors: M Brooks Tellekamp; Karen N Heinselman; Steve Harvey; Imran S Khan; Andriy Zakutayev
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Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors

ACS Energy Letters
2020-06-12 | Journal article
DOI: 10.1021/acsenergylett.0c00576
Contributors: Rekha R. Schnepf; Jacob J. Cordell; M. Brooks Tellekamp; Celeste L. Melamed; Ann L. Greenaway; Allison Mis; Geoff L. Brennecka; Steven Christensen; Garritt J. Tucker; Eric S. Toberer et al.
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Combinatorial synthesis of magnesium tin nitride semiconductors

Journal of the American Chemical Society
2020-04-11 | Journal article
DOI: 10.1021/jacs.0c02092
Part of ISSN: 0002-7863
Contributors: Ann L Greenaway; Amanda Loutris; Karen N Heinselman; Celeste L Melamed; Rekha R Schnepf; M. Brooks Tellekamp; Rachel Woods-Robinson; Rachel Sherbondy; Dylan J. Bardgett; Sage R Bauers et al.
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M. Brooks Tellekamp via Crossref Metadata Search
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Heteroepitaxial Integration of ZnGeN2 on GaN Buffers Using Molecular Beam Epitaxy

Crystal Growth & Design
2020-03-04 | Journal article
DOI: 10.1021/acs.cgd.9b01578
Contributors: M. Brooks Tellekamp; Celeste L. Melamed; Andrew G. Norman; Adele Tamboli
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Temporal versatility from intercalation-based neuromorphic devices exhibiting 150 mV non-volatile operation

Journal of Applied Physics
2020-02-24 | Journal article
DOI: 10.1063/1.5138193
Contributors: Bill Zivasatienraj; M. Brooks Tellekamp; Alex S. Weidenbach; Aheli Ghosh; Timothy M. McCrone; W. Alan Doolittle
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Blue-green emission from epitaxial yet cation-disordered ZnGeN<sub>2−x</sub>O<sub>x</sub>

arXiv
2019 | Other
DOI: 10.48550/arxiv.1904.12022
EID:

2-s2.0-85170979487

Part of ISSN: 23318422
Contributors: Melamed, C.L.; Tellekamp, M.B.; Mangum, J.S.; Perkins, J.D.; Dippo, P.; Toberer, E.S.; Tamboli, A.C.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

arXiv
2019 | Other
DOI: 10.48550/arxiv.1910.03705
EID:

2-s2.0-85169273884

Part of ISSN: 23318422
Contributors: Brooks Tellekamp, M.; Shank, J.C.; Goorsky, M.S.; Alan Doolittle, W.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Molecular Beam Epitaxy of Lithium Niobium Oxide Multifunctional Materials

arXiv
2019 | Other
DOI: 10.48550/arxiv.1910.03703
EID:

2-s2.0-85170334196

Part of ISSN: 23318422
Contributors: Tellekamp, M.B.; Shank, J.C.; Doolittle, W.A.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Scalable memdiodes exhibiting rectification and hysteresis for neuromorphic computing

arXiv
2019 | Other
DOI: 10.48550/arxiv.1910.03700
EID:

2-s2.0-85169201495

Part of ISSN: 23318422
Contributors: Shank, J.C.; Brooks Tellekamp, M.; Wahila, M.J.; Howard, S.; Weidenbach, A.S.; Zivasatienraj, B.; Piper, L.F.J.; Alan Doolittle, W.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Thin‐Film Lithium Niobites and Their Chemical Properties for Lithium‐Ion Storage and Diffusion

ChemElectroChem
2019-10 | Journal article
DOI: 10.1002/celc.201901347
Part of ISSN: 2196-0216
Contributors: Dong‐Chan Lee; Joshua C. Shank; M. Brooks Tellekamp; W. Alan Doolittle; Faisal M. Alamgir
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M. Brooks Tellekamp via Crossref Metadata Search
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Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2

Physical Review Materials
2019-07 | Journal article
DOI: 10.1103/physrevmaterials.3.074602
Part of ISSN: 2475-9953
Contributors: Matthew J. Wahila; Galo Paez; Christopher N. Singh; Anna Regoutz; Shawn Sallis; Mateusz J. Zuba; Jatinkumar Rana; M. Brooks Tellekamp; Jos E. Boschker; Toni Markurt et al.
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Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy

Journal of Applied Physics
2019-07-07 | Journal article
DOI: 10.1063/1.5097557
Contributors: Evan A. Clinton; Ehsan Vadiee; M. Brooks Tellekamp; W. Alan Doolittle
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Blue-green emission from epitaxial yet cation-disordered ZnGeN2−xOx

Physical Review Materials
2019-05 | Journal article
DOI: 10.1103/physrevmaterials.3.051602
Part of ISSN: 2475-9953
Contributors: Celeste L. Melamed; M. Brooks Tellekamp; John S. Mangum; John D. Perkins; Patricia Dippo; Eric S. Toberer; Adele C. Tamboli
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Diffuson-driven ultralow thermal conductivity in amorphous Nb2O5 thin films

Physical Review Materials
2019-02 | Journal article
DOI: 10.1103/physrevmaterials.3.025002
Part of ISSN: 2475-9953
Contributors: Zhe Cheng; Alex Weidenbach; Tianli Feng; M. Brooks Tellekamp; Sebastian Howard; Matthew J. Wahila; Bill Zivasatienraj; Brian Foley; Sokrates T. Pantelides; Louis F. J. Piper et al.
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Diffuson-driven ultralow thermal conductivity in amorphous Nb2O5 thin films

arXiv
2018 | Other
DOI: 10.48550/arxiv.1807.05483
EID:

2-s2.0-85170782147

Part of ISSN: 23318422
Contributors: Cheng, Z.; Weidenbach, A.; Feng, T.; Tellekamp, M.B.; Howard, S.; Wahila, M.J.; Zivasatienraj, B.; Foley, B.; Pantelides, S.T.; Piper, L.F.J. et al.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing

Scientific Reports
2018-08 | Journal article
DOI: 10.1038/s41598-018-30727-9
Part of ISSN: 2045-2322
Contributors: Joshua C. Shank; M. Brooks Tellekamp; Matthew J. Wahila; Sebastian Howard; Alex S. Weidenbach; Bill Zivasatienraj; Louis F. J. Piper; W. Alan Doolittle
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Total-Ionizing-Dose Response of Nb2O5-Based MIM Diodes for Neuromorphic Computing Applications

IEEE Transactions on Nuclear Science
2018-01 | Journal article
DOI: 10.1109/tns.2017.2761904
Part of ISSN: 0018-9499
Contributors: Rong Jiang; En Xia Zhang; Simeng E. Zhao; Daniel M. Fleetwood; Ronald D. Schrimpf; Robert A. Reed; Michael L. Alles; Joshua C. Shank; M. Brooks Tellekamp; William A. Doolittle
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Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials

Journal of Crystal Growth
2017-04 | Journal article
DOI: 10.1016/j.jcrysgro.2017.02.020
Contributors: M. Brooks Tellekamp; Joshua C. Shank; W. Alan Doolittle
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A scalable non-electroformed memdiode for neuromorphic circuitry

Device Research Conference - Conference Digest, DRC
2016 | Conference paper
DOI: 10.1109/DRC.2016.7548463
EID:

2-s2.0-84987768424

ISBN: 9781509028276
Part of ISSN: 15483770
Contributors: Shank, J.C.; Tellekamp, M.B.; Doolittle, W.A.
Source: Self-asserted source
M. Brooks Tellekamp via Scopus - Elsevier

Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

Journal of Electronic Materials
2016-10-07 | Journal article
DOI: 10.1007/s11664-016-4986-3
Part of ISSN: 0361-5235
Contributors: M. Brooks Tellekamp; Joshua C. Shank; Mark S. Goorsky; W. Alan Doolittle
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Peer review (5 reviews for 2 publications/grants)

Review activity for Crystal growth & design. (4)
Review activity for Physica status solidi. (1)
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