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Weifang University: Weifang, Shandong, CN

Employment
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Kai Han

Education and qualifications (1)

Institute of Microelectronics of Chinese Academy of Sciences: Beijing, CN

Education
Source: Self-asserted source
Kai Han

Works (24)

Tunable electronic and magnetic properties of monolayer electride Hf2S by N decorating

Applied Surface Science
2025-07 | Journal article
DOI: 10.1016/j.apsusc.2025.163020
Contributors: Xiaole Qiu; Wenjun Zhang; Jiaxi Zhang; Kai Han; Hongchao Yang
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Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

IEEE Access
2024 | Journal article
DOI: 10.1109/ACCESS.2024.3354378
Contributors: Muhammad Faizan; Kai Han; Xiaolei Wang; Muhammad Zain Yousaf
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Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3409203
Contributors: Saifei Dai; Songwei Li; Shuangshuang Xu; Fengbin Tian; Junshuai Chai; Jiahui Duan; Wenjuan Xiong; Jinjuan Xiang; Kai Han; Yanrong Wang et al.
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Effect of Nitridation of Bottom Interlayer in FeFETs With the TiN/Al2O3/Hf0.5Zr0.5O2/Bottom Interlayer/Si Substrate Structure

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3473889
Contributors: Jia Yang; Runhao Han; Tao Hu; Saifei Dai; Xianzhou Shao; Xiaoqing Sun; Junshuai Chai; Hao Xu; Kai Han; Yanrong Wang et al.
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Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si Gate-Stacks

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3479159
Contributors: Xianzhou Shao; Junshuai Chai; Fengbin Tian; Xiaoyu Ke; Min Liao; Saifei Dai; Hongyang Fan; Xiaoqing Sun; Hao Xu; Kai Han et al.
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Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer

IEEE Transactions on Electron Devices
2024-10 | Journal article
DOI: 10.1109/TED.2024.3446753
Contributors: Min Liao; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
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Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

IEEE Transactions on Electron Devices
2024-08 | Journal article
DOI: 10.1109/TED.2024.3418372
Contributors: Saifei Dai; Junshuai Chai; Jiahui Duan; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Jing Zhang; Xiaolei Wang; Wenwu Wang
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Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses

IEEE Transactions on Electron Devices
2024-06 | Journal article
DOI: 10.1109/TED.2024.3393935
Contributors: Xiaoyu Ke; Junshuai Chai; Xianzhou Shao; Jiahui Duan; Xiaoqing Sun; Shuai Yang; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu et al.
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Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor

AIP Advances
2024-06-01 | Journal article
DOI: 10.1063/5.0208941
Contributors: Xiaoyu Ke; Saifei Dai; Hao Xu; Junshuai Chai; Kai Han; Xiaolei Wang; Wenwu Wang
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Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2

IEEE Transactions on Electron Devices
2024-03 | Journal article
DOI: 10.1109/TED.2024.3351599
Contributors: Xinpei Jia; Junshuai Chai; Jiahui Duan; Xiaoqing Sun; Xianzhou Shao; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang et al.
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Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current

IEEE Transactions on Electron Devices
2024-02 | Journal article
DOI: 10.1109/TED.2023.3341905
Contributors: Fengbin Tian; Xiaoqing Sun; Songwei Li; Shuangshuang Xu; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Jing Zhang et al.
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A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3297563
Contributors: Min Liao; Junshuai Chai; Jinjuan Xiang; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
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Crossref

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3297082
Contributors: Xiaoqing Sun; Junshuai Chai; Fengbin Tian; Shujing Zhao; Jiahui Duan; Jinjuan Xiang; Kai Han; Hao Xu; Xiaolei Wang; Wenwu Wang
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Crossref

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3285715
Contributors: Min Liao; Hao Xu; Jiahui Duan; Shujing Zhao; Fengbin Tian; Junshuai Chai; Kai Han; Yibo Jiang; Jinjuan Xiang; Wenwu Wang et al.
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Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement

IEEE Transactions on Electron Devices
2023-06 | Journal article
DOI: 10.1109/TED.2023.3265913
Contributors: Xianzhou Shao; Junshuai Chai; Fengbin Tian; Shujing Zhao; Jiahui Duan; Xiaoyu Ke; Xiaoqing Sun; Jinjuan Xiang; Kai Han; Yanrong Wang et al.
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Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf0.5Zr0.5O2/SiO x Interface to Suppress Oxygen Vacancy Generation

IEEE Transactions on Electron Devices
2022-12 | Journal article
DOI: 10.1109/TED.2022.3217997
Contributors: Junshuai Chai; Hao Xu; Jinjuan Xiang; Yuanyuan Zhang; Shujing Zhao; Fengbin Tian; Jiahui Duan; Kai Han; Xiaolei Wang; Jun Luo et al.
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Crossref

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue

IEEE Transactions on Electron Devices
2022-12 | Journal article
DOI: 10.1109/TED.2022.3215935
Contributors: Jiahui Duan; Shujing Zhao; Fengbin Tian; Jinjuan Xiang; Kai Han; Tingting Li; Hao Xu; Xiaolei Wang; Wenwu Wang; Tianchun Ye
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Crossref

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

IEEE Transactions on Electron Devices
2022-03 | Journal article
DOI: 10.1109/TED.2021.3139285
Contributors: Shujing Zhao; Fengbin Tian; Hao Xu; Jinjuan Xiang; Tingting Li; Junshuai Chai; Jiahui Duan; Kai Han; Xiaolei Wang; Wenwu Wang et al.
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Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x O2/Interlayer/Si (MFIS) Gate Structure

IEEE Transactions on Electron Devices
2021-11 | Journal article
DOI: 10.1109/TED.2021.3114663
Contributors: Fengbin Tian; Shujing Zhao; Hao Xu; Jinjuan Xiang; Tingting Li; Wenjuan Xiong; Jiahui Duan; Junshuai Chai; Kai Han; Xiaolei Wang et al.
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Crossref

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

IEEE Transactions on Electron Devices
2021-09 | Journal article
DOI: 10.1109/TED.2021.3097008
Contributors: Xiaoqing Sun; Yuanyuan Zhang; Jinjuan Xiang; Kai Han; Xiaolei Wang; Wenwu Wang; Tianchun Ye
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Crossref

On the Dependence of Band Alignment of SiO₂/Si Stack on SiO₂ Thickness: Extrinsic Or Intrinsic?

IEEE Access
2020 | Journal article
DOI: 10.1109/ACCESS.2020.3020072
Contributors: Yonggui Xu; Kai Han; Jinjuan Xiang; Xiaolei Wang
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Crossref

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

Journal of Physics D: Applied Physics
2020-11-04 | Journal article
DOI: 10.1088/1361-6463/aba70e
Contributors: Yuanyuan Zhang; Xueli Ma; Xiaolei Wang; Kai Han; Jinjuan Xiang; Wenwu Wang
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Crossref

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

IEEE Transactions on Electron Devices
2020-10 | Journal article
DOI: 10.1109/TED.2020.3017569
Contributors: Xiaolei Wang; Xiaoqing Sun; Yuanyuan Zhang; Lixing Zhou; Jinjuan Xiang; Xueli Ma; Hong Yang; Yongliang Li; Kai Han; Jun Luo et al.
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Crossref

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

Semiconductor Science and Technology
2019-07-01 | Journal article
DOI: 10.1088/1361-6641/ab2167
Contributors: Kai Han; Xiaolei Wang; Jinjuan Xiang; Lixing Zhou; Jiazhen Zhang; Yanrong Wang; Xueli Ma; Hong Yang; Jing Zhang; Chao Zhao et al.
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