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United States

Activities

Employment (4)

University of South Carolina: Columbia, SC, US

2019-10-22 to present | Post doctoral fellow (Electrical Engineering)
Employment
Source: Self-asserted source
Sandeep Chaudhuri

Central University of Jharkhand: Brambe, Jharkhand, IN

2014-06-18 to 2019-10-14 | Assistant Professor (Physics)
Employment
Source: Self-asserted source
Sandeep Chaudhuri

University of South Carolina: Columbia, South Carolina, US

2012-01-16 to 2014-05-31 | Post Doctoral Fellow (Electrical Engineering)
Employment
Source: Self-asserted source
Sandeep Chaudhuri

University of Surrey: Guildford, Surrey, GB

2009-04-27 to 2011-08-31 | Research Officer (Department of Physics)
Employment
Source: Self-asserted source
Sandeep Chaudhuri

Education and qualifications (4)

UGC DAE Consortium for Scientific Research, Kolkata Centre: Kolkata, West Bengal, IN

2002-09-25 to 2008-12-05 | Research Scholar (Material Science)
Qualification
Source: Self-asserted source
Sandeep Chaudhuri

Banaras Hindu University Faculty of Science: Varanasi, Uttar Pradesh, IN

2000-08-13 to 2002-04 | Masters student (Physics)
Qualification
Source: Self-asserted source
Sandeep Chaudhuri

Gushkara Mahavidyalaya, University of Burdwan: Gushkara, West Bengal, IN

1997 to 2000 | BSc (Hons) student (Physics)
Qualification
Source: Self-asserted source
Sandeep Chaudhuri

Model English HIgh School: Sindri, Dhanbad, Jharkhand, IN

1985 to 1997 | High School
Education
Source: Self-asserted source
Sandeep Chaudhuri

Professional activities (3)

Indian Association of Physics Teachers: New Delhi, IN

Membership
Source: Self-asserted source
Sandeep Chaudhuri

SPIE: Bellingham, WA, US

2021-07-09 to present | Individual Member
Membership
Source: Self-asserted source
Sandeep Chaudhuri

IEEE: New York, NY, US

2020-04-21 to present
Membership
Source: Self-asserted source
Sandeep Chaudhuri

Funding (3)

Machine Learning Reinforced Novel CdZnTeSe Semiconductor Based Radiation Spectrometers for Nuclear Waste Monitoring

2021-07 to 2022-08 | Grant
University of South Carolina (SC, SC, US)
Source: Self-asserted source
Sandeep Chaudhuri

Realization of physical Frisch Grid using ion implantation in high-Z semiconductor based nuclear detectors

2015-12 to 2018-12 | Grant
UGC-DAE Consortium for Scientific Research, University Grants Commission (Kolkata, IN)
GRANT_NUMBER:

UGC DAE-CSR-KC/CRS/15/I0P/MS/03/ 0667/0672/0757

Source: Self-asserted source
Sandeep Chaudhuri

Default

2015-07 to 2018-03 | Grant
University Grants Commission (New Delhi, IN)
GRANT_NUMBER:

F.4-5(106-FRP)/2014(BSR)

Source: Self-asserted source
Sandeep Chaudhuri
grade
Preferred source (of 2)‎

Works (50 of 88)

Items per page:
Page 1 of 2

High-Resolution Cr/4H-SiC Schottky Barrier Radiation Detector

IEEE Transactions on Nuclear Science
2025 | Journal article
Contributors: Ritwik Nag; Sandeep K. Chaudhuri; Frank H. Ruddy; Krishna C. Mandal
Source: check_circle
Crossref

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

IEEE Transactions on Nuclear Science
2024 | Journal article
Contributors: Frank H. Ruddy; Sandeep K. Chaudhuri; Krishna C. Mandal
Source: check_circle
Crossref

Deep Learning-Based Classification of Gamma Photon Interaction in Room-Temperature Semiconductor Radiation Detectors

IEEE Access
2024 | Journal article
Contributors: Sandeep K. Chaudhuri; Qinyang Li; Krishna C. Mandal; Jianjun Hu
Source: check_circle
Crossref

Self-Biased (p⁺)Diamond/(n)4H-SiC Vertical Schottky Diodes for UV Detection

IEEE Electron Device Letters
2024-12 | Journal article
Contributors: Krishna C. Mandal; Sandeep K. Chaudhuri; Ritwik Nag
Source: check_circle
Crossref

High-Resolution γ -Ray Spectroscopy in Capacitive Frisch Grid CdZnTeSe Detectors

IEEE Electron Device Letters
2024-10 | Journal article
Contributors: Sandeep K. Chaudhuri; Ritwik Nag; Utpal N. Roy; Ralph B. James; Krishna C. Mandal
Source: check_circle
Crossref

High-Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review

IEEE Transactions on Nuclear Science
2024-08 | Journal article
Contributors: Krishna C. Mandal; Sandeep K. Chaudhuri; Frank H. Ruddy
Source: check_circle
Crossref

High-Resolution Alpha Spectrometry Using 4H-SiC Detectors: A Review of the State-of-the-Art

IEEE Transactions on Nuclear Science
2023 | Journal article
Contributors: Krishna C. Mandal; Sandeep K. Chaudhuri; Frank H. Ruddy
Source: check_circle
Crossref

Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction

IEEE Transactions on Electron Devices
2023-12 | Journal article
Contributors: Sandeep K. Chaudhuri; Ritwik Nag; Iftikhar Ahmad; Krishna C. Mandal
Source: check_circle
Crossref

Charge Trapping Effects in THM- and VGF-Grown CdZnTeSe Radiation Detectors

IEEE Transactions on Nuclear Science
2023-09 | Journal article
Contributors: Sandeep K. Chaudhuri; Ritwik Nag; Joshua W. Kleppinger; Utpal N. Roy; Ralph B. James; Krishna C. Mandal
Source: check_circle
Crossref

Effect of Enhanced Hole Transport on the Performance of Ni/Y2O3/n-4H-SiC Epilayer Radiation Detectors

IEEE Transactions on Nuclear Science
2023-09 | Journal article
Contributors: Omerfaruk Karadavut; Joshua W. Kleppinger; Sandeep K. Chaudhuri; Krishna C. Mandal
Source: check_circle
Crossref

Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Applied Physics Letters
2023-08-07 | Journal article
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; Ritwik Nag; Utpal N. Roy; Ralph B. James; Krishna C. Mandal
Source: check_circle
Crossref

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

Micromachines
2023-07-30 | Journal article
Contributors: Krishna C. Mandal; Sandeep K. Chaudhuri; Ritwik Nag
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Self-Biased Mo/n-4H-SiC Schottky Barriers as High-Performance Ultraviolet Photodetectors

IEEE Electron Device Letters
2023-05 | Journal article
Contributors: Sandeep K. Chaudhuri; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide–semiconductor (MOS) betavoltaic cell

Journal of Materials Science: Materials in Electronics
2023-02 | Journal article
Contributors: Sandeep K. Chaudhuri; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

Vertical gradient freeze growth of detector grade CdZnTeSe single crystals

Journal of Crystal Growth
2022-10 | Journal article
Contributors: Ritwik Nag; Sandeep K. Chaudhuri; Joshua W. Kleppinger; OmerFaruk Karadavut; Krishna C. Mandal
Source: check_circle
Crossref

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

IEEE Electron Device Letters
2022-09 | Journal article
Contributors: Sandeep K. Chaudhuri; OmerFaruk Karadavut; Joshua W. Kleppinger; Ritwik Nag; Gene Yang; Dongkyu Lee; Krishna C. Mandal
Source: check_circle
Crossref

Current Transient Spectroscopic Study of Vacancy Complexes in Diamond Schottky p-i-n Diode

IEEE Transactions on Electron Devices
2022-08 | Journal article
Contributors: Sandeep K. Chaudhuri; Mohamadali Malakoutian; Joshua W. Kleppinger; Maitreya Dutta; Franz A. Koeck; Robert J. Nemanich; Srabanti Chowdhury; Krishna C. Mandal
Source: check_circle
Crossref

Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-μm-Thick 4H-SiC Epitaxial Layers

IEEE Transactions on Nuclear Science
2022-08 | Journal article
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; Omerfaruk Karadavut; Ritwik Nag; Daniel L. P. Watson; Douglas S. McGregor; Krishna C. Mandal
Source: check_circle
Crossref

Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection

IEEE Transactions on Nuclear Science
2022-08 | Journal article
Contributors: Omerfaruk Karadavut; Sandeep K. Chaudhuri; Joshua W. Kleppinger; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

Applied Physics Letters
2022-07-04 | Journal article
Contributors: OmerFaruk Karadavut; Sandeep K. Chaudhuri; Joshua W. Kleppinger; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm

Journal of Crystal Growth
2022-04 | Journal article
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; OmerFaruk Karadavut; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref

Synthesis of CdZnTeSe single crystals for room temperature radiation detector fabrication: mitigation of hole trapping effects using a convolutional neural network

Journal of Materials Science: Materials in Electronics
2022-01 | Journal article
Contributors: Sandeep K. Chaudhuri; Joshua W. Kleppinger; OmerFaruk Karadavut; Ritwik Nag; Rojina Panta; Forest Agostinelli; Amit Sheth; Utpal N. Roy; Ralph B. James; Krishna C. Mandal
Source: check_circle
Crossref

Characterization of vertical Bridgman grown Cd0.9Zn0.1Te0.97Se0.03 single crystal for room-temperature radiation detection

Journal of Materials Science: Materials in Electronics
2021-11-25 | Journal article
Contributors: Ritwik Nag; Sandeep K. Chaudhuri; Joshua W. Kleppinger; OmerFaruk Karadavut; Krishna C. Mandal
Source: check_circle
Crossref

Growth of Cd0.9Zn0.1Te1–y Se y Single Crystals for Room-Temperature Gamma Ray Detection

IEEE Transactions on Nuclear Science
2021-09 | Journal article
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; Utpal N. Roy; Ralph B. James; Krishna C. Mandal
Source: check_circle
Crossref

High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Journal of Applied Physics
2021-08-21 | Journal article
Contributors: Sandeep K. Chaudhuri; OmerFaruk Karadavut; Joshua W. Kleppinger; Krishna C. Mandal
Source: check_circle
Crossref

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Applied Physics Letters
2021-08-09 | Journal article
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; OmerFaruk Karadavut; Krishna C. Mandal
Source: check_circle
Crossref

Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection

Crystals
2021-07-16 | Journal article
Contributors: Sandeep K. Chaudhuri; Joshua W. Kleppinger; OmerFaruk Karadavut; Ritwik Nag; Krishna C. Mandal
Source: check_circle
Crossref
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Preferred source (of 2)‎

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

Journal of Applied Physics
2021-06-28 | Journal article
Contributors: Joshua W. Kleppinger; Sandeep K. Chaudhuri; OmerFaruk Karadavut; Krishna C. Mandal
Source: check_circle
Crossref

Behavioral Contrast of Electron and Hole Transport in High-Resolution Diamond Detectors: A Biparametric Correlation Study

IEEE Electron Device Letters
2021-02 | Journal article
Contributors: Sandeep K. Chaudhuri; Joshua W. Kleppinger; Omerfaruk Karadavut; Krishna C. Mandal
Source: check_circle
Crossref

Correlation of Space Charge Limited Current and γ-Ray Response of CdxZn1-xTe1-ySey Room-Temperature Radiation Detectors

IEEE Electron Device Letters
2020-09 | Journal article
Contributors: Sandeep K. Chaudhuri; Mohsin Sajjad; Joshua W. Kleppinger; Krishna C. Mandal
Source: check_circle
Crossref

Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects

Journal of Applied Physics
2020-09-21 | Journal article
Contributors: Sandeep K. Chaudhuri; Joshua W. Kleppinger; Krishna C. Mandal
Source: check_circle
Crossref

Growth of Large-Area Cd₀.₉Zn₀.₁Te Single Crystals and Fabrication of Pixelated Guard-Ring Detector for Room-Temperature γ-Ray Detection

IEEE Transactions on Nuclear Science
2020-08 | Journal article
Contributors: Mohsin Sajjad; Sandeep K. Chaudhuri; Joshua W. Kleppinger; Krishna C. Mandal
Source: check_circle
Crossref

Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors

Journal of Applied Physics
2020-06-28 | Journal article
Contributors: Sandeep K. Chaudhuri; Mohsin Sajjad; Joshua W. Kleppinger; Krishna C. Mandal
Source: check_circle
Crossref

Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors

Applied Physics Letters
2020-04-20 | Journal article
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Sandeep Chaudhuri
grade
Preferred source (of 2)‎

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Micromachines
2020-02-28 | Journal article
Part of ISSN: 2072-666X
Source: Self-asserted source
Sandeep Chaudhuri

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

ECS Journal of Solid State Science and Technology
2016 | Journal article
Contributors: Das, Sandip; Chaudhuri, Sandeep K.; Mandal, Krishna C.
Source: check_circle
Web of Science Researcher Profile Sync

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

ECS Journal of Solid State Science and Technology
2016 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Correlation of deep levels with detector performance in 4H-SiC epitaxial schottky barrier alpha detectors

IEEE Transactions on Nuclear Science
2014 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Defect levels in Cu2ZnSn (SxSe1- x) 4 solar cells probed by current-mode deep level transient spectroscopy

Applied Physics Letters
2014 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Defect levels in Cu2ZnSn(SxSe1-x)(4) solar cells probed by current-mode deep level transient spectroscopy

Applied Physics Letters
2014 | Journal article
Contributors: Das, Sandip; Chaudhuri, Sandeep K.; Bhattacharya, Raghu N.; Mandal, Krishna C.
Source: check_circle
Web of Science Researcher Profile Sync

Effect of Z(1/2), EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Journal of Applied Physics
2014 | Journal article
Contributors: Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.
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Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Journal of Applied Physics
2014 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI
2014 | Conference paper
Source: Self-asserted source
Sandeep Chaudhuri

Large Area $${$rm Cd$}$ _ ${$0.9$}$${$rm Zn$}$ _ ${$0.1$}$${$rm Te$}$ $ Pixelated Detector: Fabrication and Characterization

Nuclear Science, IEEE Transactions on
2014 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Large Area Cd0.9Zn0.1Te Pixelated Detector: Fabrication and Characterization

IEEE Transactions on Nuclear Science
2014 | Journal article
Contributors: Chaudhuri, Sandeep K.; Khai Nguyen; Pak, Rahmi O.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Mandal, Krishna C.
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Web of Science Researcher Profile Sync

An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection

IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
2013 | Conference paper
Contributors: Mandal, Krishna C.; Chaudhuri, Sandeep K.; Khai Nguyen
Source: check_circle
Web of Science Researcher Profile Sync

An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
2013 | Conference paper
Source: Self-asserted source
Sandeep Chaudhuri

Biparametric analyses of charge trapping in Cd0.9Zn0.1Te based virtual Frisch grid detectors

Journal of Applied Physics
2013 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Cd0.9Zn0.1Te Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing Gamma Detectors

IEEE Transactions on Nuclear Science
2013 | Journal article
Source: Self-asserted source
Sandeep Chaudhuri

Characterization of amorphous selenium alloy detectors for x-rays and high energy nuclear radiation detection

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV
2013 | Conference paper
Source: Self-asserted source
Sandeep Chaudhuri
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