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Scopus Author ID: 57211310408

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Employment (2)

IMEC: Leuven, Belgium, BE

2022-09-01 to present | Process Integration Engineer
Employment
Source: Self-asserted source
Md Arif Khan

AGNIT Semiconductors pvt ltd: Bengaluru, Karnataka, IN

2021-04-05 to 2022-07-31 | Senior Process Engineer
Employment
Source: Self-asserted source
Md Arif Khan

Works (21)

Route Toward Commercially Manufacturable Vertical GaN Devices

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2023.3340661
Contributors: Karen Geens; M. Borga; M. A. Khan; W. Gonçalez Filho; A. Vohra; S. Banerjee; K. J. Lee; U. Chatterjee; D. Cingu; B. Bakeroot et al.
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Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN

IEEE Transactions on Electron Devices
2024-09 | Journal article
DOI: 10.1109/TED.2024.3422950
Contributors: Walter Gonçalez Filho; Matteo Borga; Karen Geens; Md Arif Khan; Deepthi Cingu; Urmimala Chatterjee; Stefaan Decoutere; Werner Knaepen; Seda Kizir; Panagiota Arnou et al.
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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Applied Physics Letters
2024-03-11 | Journal article
DOI: 10.1063/5.0191973
Contributors: Walter Gonçalez Filho; Matteo Borga; Karen Geens; Md Arif Khan; Deepthi Cingu; Urmimala Chatterjee; Anurag Vohra; Stefaan Decoutere; Benoit Bakeroot
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Crossref

Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs

Semiconductor Science and Technology
2023-03-01 | Journal article
DOI: 10.1088/1361-6641/acb8d5
Contributors: Md Arif Khan; Rangarajan Muralidharan; Hareesh Chandrasekar
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Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer

IEEE Transactions on Electron Devices
2022-11 | Journal article
DOI: 10.1109/TED.2022.3206172
Contributors: Pawan Kumar; Sumit Chaudhary; Md Arif Khan; Ruchi Singh; Myo Than Htay; Rahul Prajesh; Ajay Agarwal; Shaibal Mukherjee
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Electron scattering analysis in 2DEG in sputtering-grown MgZnO/ZnO heterostructure

Journal of Physics D: Applied Physics
2020 | Journal article
DOI: 10.1088/1361-6463/ab6467
EID:

2-s2.0-85079532050
Contributors: Kumar, P.; Khan, M.A.; Siddharth, G.; Kumar, S.; Singh, R.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Performance Analysis of p-LPZO/n-GZO and p-SZO/n-GZO Homojunction UV Photodetectors

Superlattices and Microstructures
2020 | Journal article
DOI: 10.1016/j.spmi.2020.106451
EID:

2-s2.0-85079840637
Contributors: Bhardwaj, R.; Singh, R.; Khan, M.A.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Drain Current Optimization in DIBS-Grown MgZnO/CdZnO HFET

IEEE Transactions on Electron Devices
2020-06 | Journal article
DOI: 10.1109/TED.2020.2989731
Contributors: Md Arif Khan; Pawan Kumar; Mangal Das; Myo Than Htay; Ajay Agarwal; Shaibal Mukherjee
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Crossref

Analytical Performance Analysis of CdZnO/ZnO-Based Multiple Quantum Well Solar Cell

IEEE Transactions on Electron Devices
2020-03 | Journal article
DOI: 10.1109/TED.2020.2965020
Contributors: Gaurav Siddharth; Brajendra S. Sengar; Vivek Garg; Md Arif Khan; Ruchi Singh; Shaibal Mukherjee
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Enhanced sheet carrier density in zno based heterostructure by alloying cadmium in buffer layer zno

Springer Proceedings in Physics
2019 | Conference paper
DOI: 10.1007/978-3-319-97604-4_193
EID:

2-s2.0-85064047325
Contributors: Khan, M.A.; Singh, R.; Bhardwaj, R.; Kranti, A.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Mgzno based uv heterojunction photodetector fabricated using dual ion beam sputtering

Springer Proceedings in Physics
2019 | Conference paper
DOI: 10.1007/978-3-319-97604-4_149
EID:

2-s2.0-85064043785
Contributors: Bhardwaj, R.; Sharma, P.; Khan, M.A.; Singh, R.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Spectral Photoresponse Tunability of MgZnO Based UV Photodetectors

Proceedings of the IEEE Conference on Nanotechnology
2019 | Conference paper
DOI: 10.1109/NANO.2018.8626417
EID:

2-s2.0-85062258600
Contributors: Bhardwaj, R.; Mandal, B.; Khan, M.A.; Aaryashree; Kumar, A.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Analysis of Drain Current in Polycrystalline MgZnO/ZnO and MgZnO/CdZnO HFET

IEEE Transactions on Electron Devices
2019-12 | Journal article
DOI: 10.1109/TED.2019.2947422
Contributors: Md Arif Khan; Pawan Kumar; Gaurav Siddharth; Mangal Das; Shaibal Mukherjee
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Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

Journal of Physics D: Applied Physics
2018 | Journal article
DOI: 10.1088/1361-6463/aab183
EID:

2-s2.0-85044134129
Contributors: Singh, R.; Khan, M.A.; Sharma, P.; Htay, M.T.; Kranti, A.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Effect of Surface Variations on the Performance of Yttria Based Memristive System

IEEE Electron Device Letters
2018-12 | Journal article
DOI: 10.1109/LED.2018.2878953
Contributors: Mangal Das; Amitesh Kumar; Sanjay Kumar; Biswajit Mandal; Md Arif Khan; Shaibal Mukherjee
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Role of Surface States and Interface Charges in 2DEG in Sputtered ZnO Heterostructures

IEEE Transactions on Electron Devices
2018-07 | Journal article
DOI: 10.1109/TED.2018.2838546
Contributors: Rohit Singh; Md. Arif Khan; Shaibal Mukherjee; Abhinav Kranti
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Crossref
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Enhanced Sheet Charge Density in DIBS Grown CdO Alloyed ZnO Buffer Based Heterostructure

IEEE Electron Device Letters
2018-06 | Journal article
DOI: 10.1109/LED.2018.2829761
Contributors: Md Arif Khan; Rohit Singh; Ritesh Bhardwaj; Amitesh Kumar; Amit Kumar Das; Pankaj Misra; Abhinav Kranti; Shaibal Mukherjee
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Analytical Model for 2DEG Density in Graded MgZnO/ZnO Heterostructures with Cap Layer

IEEE Transactions on Electron Devices
2017 | Journal article
DOI: 10.1109/TED.2017.2721437
EID:

2-s2.0-85023622408
Contributors: Singh, R.; Khan, M.A.; Mukherjee, S.; Kranti, A.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Buffer layer engineering for high (≥ 10<sup>13</sup> cm<sup>-2</sup>) 2-DEG density in ZnO-based heterostructures

IEEE Transactions on Electron Devices
2017 | Journal article
DOI: 10.1109/TED.2016.2647258
EID:

2-s2.0-85009975888
Contributors: Khan, M.A.; Singh, R.; Mukherjee, S.; Kranti, A.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact

Journal of Physics D: Applied Physics
2016 | Journal article
DOI: 10.1088/0022-3727/49/44/445303
EID:

2-s2.0-84992727453
Contributors: Singh, R.; Sharma, P.; Khan, M.A.; Garg, V.; Awasthi, V.; Kranti, A.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier

Two-dimensional electron gas in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
2016 | Conference paper
DOI: 10.1109/ICIPRM.2016.7528617
EID:

2-s2.0-84992045193
Contributors: Singh, R.; Khan, M.A.; Kranti, A.; Mukherjee, S.
Source: Self-asserted source
Md Arif Khan via Scopus - Elsevier
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