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Works (2)

A Novel Trench IGBT With N-P-N Polysilicon Gate Structure for Low EMI Noise and High Robustness

IEEE Transactions on Electron Devices
2024 | Journal article
Contributors: Yishang Zhao; Zehong Li; Jixian Zhu; Yang Yang; Kuangli Chen; Tongyang Wang; Ziming Xia
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Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

IEEE Transactions on Power Electronics
2024-02 | Journal article
Contributors: Ning Yang; Chaowu Pan; Zhen Wu; Pengxiang Bai; Kuangli Chen; Liyang Zhu; Chunhua Zhou; Bo Zhang; Qi Zhou
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