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Scopus Author ID: 56367531000
Scopus Author ID: 56367531000

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Employment (2)

The University of Birmingham: Birmingham, GB

Employment
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University of Birmingham

University of Birmingham: Birmingham, GB

2019-05-06 to present | Research Fellow (Metallurgy & Materials)
Employment
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Dimitra Spathara

Education and qualifications (3)

The University of Birmingham: Birmingham, GB

Education
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University of Birmingham

University of Birmingham: Birmingham, GB

2013-12-02 to 2019-05-13 | PhD Researcher (Metallurgy & Materials)
Qualification
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Dimitra Spathara

University Of Edinburgh: Edinburgh, GB

2012-09-01 to 2013-08-31 | MSc Sustainable Energy Systems (School of Engineering)
Education
Source: Self-asserted source
Dimitra Spathara

Works (6)

Designing New Ultra-Radiopure, High-Strength Electroformed CuCr Alloys, for Rare Event Searches

ECS Meeting Abstracts
2024-11-22 | Journal article
DOI: 10.1149/MA2024-02231979mtgabs
Contributors: Dimitra Spathara; Patrick Knights; Konstantinos Nikolopoulos
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Crossref

Accurate voltage prediction for lithium and sodium-ion full-cell development

Next Energy
2024-10 | Journal article
DOI: 10.1016/j.nxener.2024.100166
Contributors: Yongxiu Chen; Yazid Lakhdar; Lin Chen; Brij Kishore; Jaehoon Choi; Ethan Williams; Dimitra Spathara; Roksana Jackowska; Emma Kendrick
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Crossref

Thermodynamic study of single crystal, Ni-based superalloys in the γ+γ’ two-phase region using Knudsen Effusion Mass Spectrometry, DSC and SEM

Journal of Alloys and Compounds
2021-02-24 | Journal article
DOI: 10.1016/j.jallcom.2021.159295
SOURCE-WORK-ID:

13c37794-6b1c-4d7c-9d21-499a722865cf
Source: Self-asserted source
Dimitra Spathara
grade
Preferred source (of 2)‎

Study into the Role of Nickel Vapor on Surface Modification of a Third-Generation Single-Crystal Superalloy

Metallurgical and Materials Transactions A
2018 | Journal article
DOI: 10.1007/s11661-018-4712-2
Source: Self-asserted source
Dimitra Spathara
grade
Preferred source (of 2)‎

Depletion of parallel conducting layers in high mobility In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As modulation doped field effect transistors

AIP Conference Proceedings
2013 | Conference paper
Source: Self-asserted source
Dimitra Spathara

Depletion of parallel conducting layers in high mobility In 0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistors

Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
2013 | Conference paper | Author
DOI: 10.1063/1.4848355
SOURCE-WORK-ID:

1ad3efdd-5467-4a83-a082-cb7f6a3addf7

EID:

2-s2.0-84907343867

Part of ISBN: 9780735411944
Contributors: E. Skuras; A. Gavalas; Dimitra Spathara; Th Makris; D. Anagnostopoulos; C. R. Stanley; A. R. Long
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University of Birmingham
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