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Works (6)

Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications

Applied Physics Letters
2025-03-01 | Journal article
DOI: 10.1063/5.0257620
Contributors: Haochen Zhang; Mingshuo Zhang; Hu Wang; Xinchuan Zhang; Hui Zhang; Chengjie Zuo; Yansong Yang; Yi Pei; Haiding Sun
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2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

IEEE Electron Device Letters
2024 | Journal article
DOI: 10.1109/LED.2024.3402310
Contributors: Haochen Zhang; Hu Wang; Mingshuo Zhang; Lei Yang; Yankai Ye; Hongtu Qian; Xinchuan Zhang; Chengjie Zuo; Yansong Yang; Yi Pei et al.
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Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network

IEEE Journal of Emerging and Selected Topics in Power Electronics
2024-12 | Journal article
DOI: 10.1109/JESTPE.2024.3455999
Contributors: Zikun Xiang; Haochen Zhang; Bolun Zeng; Mingshuo Zhang; Lei Yang; Liling Qiu; Xi Jin; Yi Pei; Guoping Guo; Chao Luo et al.
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Structural and Electrical Characteristics of GaN HEMTs With In Situ SiN x Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas

IEEE Transactions on Electron Devices
2024-08 | Journal article
DOI: 10.1109/TED.2024.3420260
Contributors: Zhe Huang; Haochen Zhang; Yao Chen; Fangzhou Liang; Lei Yang; Kun Liang; Zhanyong Xing; Hu Wang; Mingshuo Zhang; Jiayao Li et al.
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GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

IEEE Electron Device Letters
2024-05 | Journal article
DOI: 10.1109/LED.2024.3381838
Contributors: Fangzhou Liang; Haochen Zhang; Siqi Zhu; Lei Yang; Zhe Huang; Kun Liang; Zhanyong Xing; Hu Wang; Mingshuo Zhang; Jiayao Li et al.
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Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

Applied Physics Letters
2023-04-24 | Journal article
DOI: 10.1063/5.0146447
Contributors: Haochen Zhang; Yao Chen; Yue Sun; Lei Yang; Kunpeng Hu; Zhe Huang; Kun Liang; Zhanyong Xing; Hu Wang; Mingshuo Zhang et al.
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