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Works (4)

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures

physica status solidi (a)
2024-11 | Journal article
DOI: 10.1002/pssa.202400053
Contributors: Taketo Kowaki; Koki Hanasaku; Minagi Miyamoto; Aina Hiyama Zazuli; Daisuke Inahara; Kai Fujii; Taisei Kimoto; Ryosuke Ninoki; Satoshi Kurai; Narihito Okada et al.
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Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy

physica status solidi (a)
2024-11 | Journal article
DOI: 10.1002/pssa.202400060
Contributors: Aina Hiyama Zazuli; Taketo Kowaki; Minagi Miyamoto; Koki Hanasaku; Daisuke Inahara; Kai Fujii; Satoshi Kurai; Narihito Okada; Yoichi Yamada
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Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy

physica status solidi (a)
2024-11 | Journal article
DOI: 10.1002/pssa.202400055
Contributors: Minagi Miyamoto; Koki Hanasaku; Taketo Kowaki; Daisuke Inahara; Aina Hiyama Zazuli; Kai Fujii; Taisei Kimoto; Ryosuke Ninoki; Satoshi Kurai; Narihito Okada et al.
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Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET

Japanese Journal of Applied Physics
2024-09-02 | Journal article
DOI: 10.35848/1347-4065/ad6e8f
Contributors: Aina Hiyama Zazuli; Taketo Kowaki; Minagi Miyamoto; Koki Hanasaku; Daisuke Inahara; Kai Fujii; Taisei Kimoto; Ryosuke Ninoki; Satoshi Kurai; Narihito Okada et al.
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Crossref
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