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Keywords

Emerging memories, ECRAM, Electron devices, Neuromorphic computing

Biography

PhD candidate in Electronics Engineering, Nanoelectronic Devices and Emerging Technologies Laboratory, Politecnico di Milano, Italy.

Activities

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Employment (1)

Politecnico di Milano: Milan, IT

2022-05 to present | Ph.D. in Electronics Engineering (DEIB)
Employment
Source: Self-asserted source
Matteo Porzani

Education and qualifications (1)

Politecnico di Milano: Milan, IT

2020 to 2022-04 | Master Of Science in Electronics Engineering (DEIB)
Education
Source: Self-asserted source
Matteo Porzani

Works (4)

Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3360015
Contributors: N. Lepri; A. Glukhov; P. Mannocci; M. Porzani; D. Ielmini
Source: check_circle
Crossref

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3376309
Contributors: M. Porzani; S. Ricci; M. Farronato; D. Ielmini
Source: check_circle
Crossref

Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3376308
Contributors: M. Porzani; F. Carletti; S. Ricci; M. Farronato; D. Ielmini
Source: check_circle
Crossref

Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network

Advanced Electronic Materials
2024-10 | Journal article
DOI: 10.1002/aelm.202300709
Contributors: Oradee Srikimkaew; Saverio Ricci; Matteo Porzani; Thien Tan Dang; Yusuke Nakaoka; Yuki Usami; Daniele Ielmini; Hirofumi Tanaka
Source: check_circle
Crossref
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