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Scopus Author ID: 58629278300

Keywords

III-V semiconductors, AlGaN/GaN HEMT, VSLI, Embedded Systems, Nanoelectronics

Countries

India

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Employment (1)

Visakha Institute of Engineering and Technology: Visakhapatnam, Andhra Pradesh, IN

2019-10-07 to 2022-07-02 | Assistant Professor (Electronics and Communication Engineering)
Employment
Source: Self-asserted source
Ellapu Bhanu Prakash

Education and qualifications (4)

National Institute of Technology: Aizawl, Mizoram, IN

2022-07-15 to present | Ph.D (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Ellapu Bhanu Prakash

Visakha Institute of Engineering and Technology: Visakhapatnam, Andhra Pradesh, IN

2017 to 2019 | M.Tech (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Ellapu Bhanu Prakash

Wellfare Institute of Science Technology and Management: Visakhapatnam, Andhra pradesh, IN

2013 to 2016 | B.E (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Ellapu Bhanu Prakash

Sai Ganapathi Polytechnic: Visakhapatnam, Andhra Pradesh, IN

2010 to 2013 | Diploma (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Ellapu Bhanu Prakash

Works (5)

Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration

2024 15th International Conference on Computing Communication and Networking Technologies, ICCCNT 2024
2024 | Conference paper
DOI: 10.1109/ICCCNT61001.2024.10724793
EID:

2-s2.0-85211131688

Part of ISBN: 9798350370249
Contributors: Prakash, E.B.; Maitra, V.; Dadi, A.P.; Ray, A.; Bordoloi, S.
Source: Self-asserted source
Ellapu Bhanu Prakash via Scopus - Elsevier
grade
Preferred source (of 2)‎

Effect of Buried depth, Thickness of Channel and Gate length on Breakdown Voltage in AlGaN/GaN HEMT

2024 12th International Conference on Internet of Everything, Microwave, Embedded, Communication and Networks (IEMECON)
2024-10-24 | Conference paper
DOI: 10.1109/iemecon62401.2024.10846033
Contributors: Anil Prasad Dadi; Ellapu Bhanu Prakash; Vijay Maitra; Ashok Ray; Sushanta Bordoloi; Ellapu Bhanu Prakash
Source: Self-asserted source
Ellapu Bhanu Prakash

Development of Rectangular Nanosheet GAA-FET with Underlap

NanoWorld Journal
2023-12-21 | Journal article
DOI: 10.17756/nwj.2023-s5-085
Part of ISSN: 2379-1101
Contributors: Ellapu Bhanu Prakash; Rudra Sankar Dhar
Source: Self-asserted source
Ellapu Bhanu Prakash

Study of Nanosheet Performance by Varying the Aspect Ratio

2023 World Conference on Communication & Computing (WCONF)
2023-07-14 | Conference paper
DOI: 10.1109/wconf58270.2023.10235175
Contributors: Ellapu Bhanu Prakash; Rudra Sankar Dhar
Source: Self-asserted source
Ellapu Bhanu Prakash
grade
Preferred source (of 2)‎

A LOW POWER DESIGN FOR DI-CIRCUITS USING ENHANCED NULL CONVENTIONAL APPROACH

IJRAR - International Journal of Research and Analytical Reviews
2019-05-02 | Journal article
Part of ISSN: E-ISSN 2348-1269, P- ISSN 2349-5138
Contributors: Ellapu Bhanu Prakash; B. MURALI KRISHNA
Source: Self-asserted source
Ellapu Bhanu Prakash
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