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Works (12)

Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations

IEEE Transactions on Electron Devices
2024-09 | Journal article
DOI: 10.1109/TED.2024.3433317
Contributors: Xiaopeng Li; Lu Tai; Pengpeng Sang; Xiaoyu Dou; Xuepeng Zhan; Hao Xu; Xiaolei Wang; Jixuan Wu; Jiezhi Chen
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Crossref

Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing

Applied Physics Letters
2024-08-26 | Journal article
DOI: 10.1063/5.0223115
Contributors: Lu Tai; Xiaopeng Li; Xiaoyu Dou; Pengpeng Sang; Xuepeng Zhan; Jixuan Wu; Jiezhi Chen
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Crossref

Silicon Atomic-Layer Doped Hf₀.₇Zr₀.₃O₂ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>10¹² Cycles)

IEEE Transactions on Electron Devices
2024-07 | Journal article
DOI: 10.1109/TED.2024.3400930
Contributors: Lu Tai; Wei Wei; Pengpeng Sang; Xiaopeng Li; Xiaoyu Dou; Guoqing Zhao; Pengfei Jiang; Qing Luo; Xuepeng Zhan; Jixuan Wu et al.
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Erratum: “Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation” [Appl. Phys. Lett. 124, 092901 (2024)]

Applied Physics Letters
2024-07-08 | Journal article
DOI: 10.1063/5.0224201
Contributors: Xiaoyu Dou; Wei Wei; Pengpeng Sang; Lu Tai; Xiaopeng Li; Xuepeng Zhan; Jixuan Wu; Jiezhi Chen
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Crossref

Impact of Time Delay Schemes on Reliability Degradation during Program/Erase Cycling in HZO-based FeFETs

2024 IEEE Silicon Nanoelectronics Workshop (SNW)
2024-06-15 | Conference paper
DOI: 10.1109/snw63608.2024.10639198
Contributors: Xiaopeng Li; Guoqing Zhao; Lu Tai; Pengpeng Sang; Xiaoyu Dou; Xuepeng Zhan; Xiaolei Wang; Jixuan Wu; Jiezhi Chen
Source: Self-asserted source
Xiaopeng Li
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In-Depth Investigation of Seed Layer Engineering in Ferroelectric Hf0.5Zr0.5O2 Film: Wakeup-Free Achievement and Reliability Mechanisms

IEEE Transactions on Electron Devices
2024-02 | Journal article
DOI: 10.1109/TED.2023.3342770
Contributors: Xiaopeng Li; Jixuan Wu; Lu Tai; Xiaoyu Dou; Pengpeng Sang; Hao Xu; Xuepeng Zhan; Xiaolei Wang; Jiezhi Chen
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Crossref

Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation

Applied Physics Letters
2024-02-26 | Journal article
DOI: 10.1063/5.0194409
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Contributors: Xiaoyu Dou; Wei Wei; Pengpeng Sang; Lu Tai; Xiaopeng Li; Xuepeng Zhan; jixuan wu; jiezhi chen
Source: Self-asserted source
Xiaopeng Li

Toward Low-Thermal-Budget Processing in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Ozone Interface Oxidation

IEEE Electron Device Letters
2023-12 | Journal article
DOI: 10.1109/led.2023.3325426
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Contributors: Lu Tai; Wei Wei; Pengfei Jiang; Pengpeng Sang; Xiaopeng Li; Guoqing Zhao; Xiaoyu Dou; Xuepeng Zhan; Qing Luo; jixuan wu et al.
Source: Self-asserted source
Xiaopeng Li

Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair

IEEE Electron Device Letters
2023-08 | Journal article
DOI: 10.1109/LED.2023.3287874
Contributors: Xiaopeng Li; Lu Tai; Guoqing Zhao; Xuepeng Zhan; Xiaolei Wang; Masaharu Kobayashi; Jixuan Wu; Jiezhi Chen
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Crossref

Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films

IEEE Electron Device Letters
2023-05 | Journal article
DOI: 10.1109/led.2023.3263294
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Contributors: Lu Tai; Wei Wei; Pengpeng Sang; Xiaopeng Li; Guoqing Zhao; Pengfei Jiang; Peng Yuan; Qing Luo; Xuepeng Zhan; jixuan wu et al.
Source: Self-asserted source
Xiaopeng Li
grade
Preferred source (of 2)‎

Temperature-dependent Defect Behaviors in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms

2022 International Electron Devices Meeting (IEDM)
2022-12-03 | Conference paper
DOI: 10.1109/iedm45625.2022.10019325
Contributors: Xiaopeng Li; Jixuan Wu; Lu Tai; Wei Wei; Pengpeng Sang; Yang Feng; Bo Chen; Guoqing Zhao; Xuepeng Zhan; Xiaolei Wang et al.
Source: Self-asserted source
Xiaopeng Li

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film through comprehensive TDDB characterizations

Japanese Journal of Applied Physics
2022-10-01 | Journal article
DOI: 10.35848/1347-4065/ac8aea
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Contributors: Xiaopeng Li; Wei Wei; jixuan wu; Lu Tai; Xuepeng Zhan; Weiqiang Zhang; Mingfeng Tang; Guoqing Zhao; Hao Xu; Junshuai Chai et al.
Source: Self-asserted source
Xiaopeng Li
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