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Darkness in interlayer and charge density wave states of 2H-TaS2

Physical Review B
2025-03-24 | Journal article
DOI: 10.1103/PhysRevB.111.L121112
Contributors: Luigi Camerano; Dario Mastrippolito; Debora Pierucci; Ji Dai; Massimo Tallarida; Luca Ottaviano; Gianni Profeta; Federico Bisti
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Electronic structure and lattice dynamics of 1T−VSe2: Origin of the three-dimensional charge density wave

Physical Review B
2024-01-16 | Journal article
DOI: 10.1103/physrevb.109.035133
Part of ISSN: 2469-9950
Part of ISSN: 2469-9969
Contributors: Josu Diego López; D. Subires; A. H. Said; D. A. Chaney; A. Korshunov; G. Garbarino; F. Diekmann; S. K. Mahatha; V. Pardo; J. M. Wilkinson et al.
Source: Self-asserted source
Massimo Tallarida

Anisotropic Electronic Structure of the 2D Electron Gas at the AlO<i><sub>x</sub></i>/KTaO<sub>3</sub>(110) Interface

Advanced Electronic Materials
2023-10 | Journal article
DOI: 10.1002/aelm.202300267
Part of ISSN: 2199-160X
Part of ISSN: 2199-160X
Contributors: Emanuel A. Martínez; Ji Dai; Massimo Tallarida; Norbert M. Nemes; Flavio Bruno
Source: Self-asserted source
Massimo Tallarida

On the Suitable Choice of Metal for HgTe Nanocrystal-Based Photodiode: To Amalgam or Not to Amalgam

The Journal of Physical Chemistry C
2023-06-29 | Journal article
DOI: 10.1021/acs.jpcc.3c01603
Part of ISSN: 1932-7447
Part of ISSN: 1932-7455
Contributors: Rodolphe Alchaar; Corentin Dabard; Dario Mastrippolito; Erwan Bossavit; Tung Dang Huu; Mariarosa Cavallo; Adrien Khalili; Huichen Zhang; Lucile Domenach; Nicolas LEDOS et al.
Source: Self-asserted source
Massimo Tallarida

Experimental Demonstration of a Magnetically Induced Warping Transition in a Topological Insulator Mediated by Rare-Earth Surface Dopants

Nano Letters
2023-05-08 | Journal article
DOI: 10.1021/acs.nanolett.3c00587
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Contributors: Beatriz Muniz Cano; Yago Ferreiros; Pierre A. Pantaleón; Ji Dai; Massimo Tallarida; A.I. Figueroa; Vera Marinova; Kevin Garcia Diez; aitor mugarza; Sergio O. Valenzuela et al.
Source: Self-asserted source
Massimo Tallarida

Operando NAP-XPS Studies of a Ceria-Supported Pd Catalyst for CO Oxidation

Chemistry
2022-12-20 | Journal article
DOI: 10.3390/chemistry5010001
Part of ISSN: 2624-8549
Contributors: Xènia Garcia; Lluís Soler; Xavier Vendrell ; Isabel Serrano; Facundo Carlos Herrera; Jordi Prat; Eduardo Solano; Massimo Tallarida; Jordi Llorca; Carlos Escudero
Source: Self-asserted source
Massimo Tallarida

Process design for the manufacturing of soft X-ray gratings in single-crystal diamond by high-energy heavy-ion irradiation

The European Physical Journal Plus
2022-10-19 | Journal article
DOI: 10.1140/epjp/s13360-022-03358-3
Part of ISSN: 2190-5444
Contributors: Gaston Garcia; M. Martin; M. D. Ynsa; V. Torres-Costa; M. L. Crespillo; M. Tardío; J. Olivares; F. Bosia; O. Peña-Rodríguez; J. Nicolas et al.
Source: Self-asserted source
Massimo Tallarida

Enhancement of phase stability and optoelectronic performance of BiFeO3 thin films via cation co-substitution

Journal of Materials Chemistry C
2021 | Journal article
DOI: 10.1039/D0TC04304D
Contributors: Pamela Machado; Ivan Caño; César Menéndez; Claudio Cazorla; Huan Tan; Ignasi Fina; Mariano Campoy-Quiles; Carlos Escudero; Massimo Tallarida; Mariona Coll
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In situ XPS analysis of the electronic structure of silicon and titanium thin films exposed to low-pressure inductively-coupled RF plasma

Applied Surface Science
2021-03 | Journal article
DOI: 10.1016/j.apsusc.2020.148684
Part of ISSN: 0169-4332
Contributors: Jordi Fraxedas; Max Schütte; Guillaume Sauthier; Massimo Tallarida; Salvador Ferrer; Vincent Carlino; Eric Pellegrin
Source: Self-asserted source
Massimo Tallarida

In situ Near‐Ambient Pressure X‐ray Photoelectron Spectroscopy Reveals the Influence of Photon Flux and Water on the Stability of Halide Perovskite

ChemSusChem
2020-11-06 | Journal article
DOI: 10.1002/cssc.202001527
Contributors: M. Kot; L. Kegelmann; H. Köbler; M. Vorokhta; C. Escudero; P. Kúš; B. Šmíd; M. Tallarida; S. Albrecht; A. Abate et al.
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Ceria-Based Catalysts Studied by Near Ambient Pressure X-ray Photoelectron Spectroscopy: A Review

Catalysts
2020-03-03 | Journal article
DOI: 10.3390/catal10030286
Part of ISSN: 2073-4344
Contributors: Xènia Garcia; Lluís Soler; Núria J. Divins; Xavier Vendrell; Isabel Serrano; Ilaria Lucentini; Jordi Prat; Eduardo Solano; Massimo Tallarida; Carlos Escudero et al.
Source: Self-asserted source
Massimo Tallarida

Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy

Acta Materialia
2019-11 | Journal article
DOI: 10.1016/j.actamat.2019.09.003
Part of ISSN: 1359-6454
Contributors: Tony Schenk; Andris Anspoks; Inga Jonane; Reinis Ignatans; Brienne S. Johnson; Jacob L. Jones; Massimo Tallarida; Carlo Marini; Laura Simonelli; Philipp Hönicke et al.
Source: Self-asserted source
Massimo Tallarida

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

ACS Applied Electronic Materials
2019-11-26 | Journal article
DOI: 10.1021/acsaelm.9b00388
Part of ISSN: 2637-6113
Part of ISSN: 2637-6113
Contributors: Dennis H. van Dorp; Laura Nyns; Daniel Cuypers; Tsvetan Ivanov; Simone Brizzi; Massimo Tallarida; Claudia Fleischmann; Philipp Hönicke; Matthias Müller; Olivier Richard et al.
Source: Self-asserted source
Massimo Tallarida

A facile corrosion approach to the synthesis of highly active CoO<inf>x</inf> water oxidation catalysts

Journal of Materials Chemistry A
2017 | Journal article
DOI: 10.1039/c6ta10650a
EID:

2-s2.0-85014708306
Contributors: Indra, A.; Menezes, P.W.; Das, C.; Göbel, C.; Tallarida, M.; Schmeiβer, D.; Driess, M.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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New insights into water photooxidation on reductively pretreated hematite photoanodes

Physical Chemistry Chemical Physics
2017 | Journal article
DOI: 10.1039/C7CP03958A
Contributors: Dejan Cibrev; Massimo Tallarida; Chittaranjan Das; Teresa Lana-Villarreal; Dieter Schmeisser; Roberto Gómez
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Electronic properties of atomic layer deposition films, anatase and rutile TiO<inf>2</inf> studied by resonant photoemission spectroscopy

Journal of Physics D: Applied Physics
2016 | Journal article
DOI: 10.1088/0022-3727/49/27/275304
EID:

2-s2.0-84978238238
Contributors: Das, C.; Richter, M.; Tallarida, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Sacrificial Self-Assembled Monolayers for the Passivation of GaAs (100) Surfaces and Interfaces

Chemistry of Materials
2016 | Journal article
DOI: 10.1021/acs.chemmater.6b01732
EID:

2-s2.0-84983657354
Contributors: Cuypers, D.; Fleischmann, C.; Van Dorp, D.H.; Brizzi, S.; Tallarida, M.; Müller, M.; Hönicke, P.; Billen, A.; Chintala, R.; Conard, T. et al.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

Nanoscale
2015 | Journal article
DOI: 10.1039/c5nr01128k
EID:

2-s2.0-84931086237
Contributors: Nourbakhsh, A.; Adelmann, C.; Song, Y.; Lee, C.S.; Asselberghs, I.; Huyghebaert, C.; Brizzi, S.; Tallarida, M.; Schmeißer, D.; Van Elshocht, S. et al.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Si microstructures laminated with a nanolayer of TiO&lt;inf&gt;2&lt;/inf&gt; as long-term stable and effective photocathodes in PEC devices

Nanoscale
2015 | Journal article
DOI: 10.1039/c5nr00764j
EID:

2-s2.0-84929493701
Contributors: Das, C.; Tallarida, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Thermal and plasma enhanced atomic layer deposition of TiO<inf>2</inf>: Comparison of spectroscopic and electric properties

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
2015 | Journal article
DOI: 10.1116/1.4903938
EID:

2-s2.0-84919341370
Contributors: Das, C.; Henkel, K.; Tallarida, M.; Schmeißer, D.; Gargouri, H.; Kärkkänen, I.; Schneidewind, J.; Gruska, B.; Arens, M.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Capacitance and conductance versus voltage characterization of Al <inf>2</inf>O<inf>3</inf> layers prepared by plasma enhanced atomic layer deposition at 25 °c≤ T ≤ 200 °c

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
2014 | Journal article
DOI: 10.1116/1.4831897
EID:

2-s2.0-84891813418
Contributors: Henkel, K.; Gargouri, H.; Gruska, B.; Arens, M.; Tallarida, M.; Schmeißer, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Modification of hematite electronic properties with trimethyl aluminum to enhance the efficiency of photoelectrodes

Journal of Physical Chemistry Letters
2014 | Journal article
DOI: 10.1021/jz501751w
EID:

2-s2.0-84908077677
Contributors: Tallarida, M.; Das, C.; Cibrev, D.; Kukli, K.; Tamm, A.; Ritala, M.; Lana-Villarreal, T.; Gómez, R.; Leskelä, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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On the scalability of doped hafnia thin films

Applied Physics Letters
2014 | Journal article
DOI: 10.1063/1.4870075
EID:

2-s2.0-84897429137
Contributors: Adelmann, C.; Schram, T.; Chew, S.-A.; Woicik, J.C.; Brizzi, S.; Tallarida, M.; Schmeisser, D.; Horiguchi, N.; Van Elshocht, S.; Ragnarsson, L.-Å.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Quantum size effects in TiO2 thin films grown by atomic layer deposition

Beilstein Journal of Nanotechnology
2014 | Journal article
DOI: 10.3762/bjnano.5.7
EID:

2-s2.0-84894096319
Contributors: Tallarida, M.; Das, C.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Study of inp surfaces after wet chemical treatments

ECS Journal of Solid State Science and Technology
2014 | Journal article
DOI: 10.1149/2.005401jss
EID:

2-s2.0-84893772008
Contributors: Cuypers, D.; Van Dorp, D.H.; Tallarida, M.; Brizzi, S.; Conard, T.; Rodriguez, L.N.J.; Mees, M.; Arnauts, S.; Schmeisser, D.; Adelmann, C. et al.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Unification of catalytic water oxidation and oxygen reduction reactions: Amorphous beat crystalline cobalt iron oxides

Journal of the American Chemical Society
2014 | Journal article
DOI: 10.1021/ja509348t
EID:

2-s2.0-84982056745
Contributors: Indra, A.; Menezes, P.W.; Sahraie, N.R.; Bergmann, A.; Das, C.; Tallarida, M.; Schmeißer, D.; Strasser, P.; Driess, M.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

Beilstein Journal of Nanotechnology
2013 | Journal article
DOI: 10.3762/bjnano.4.83
EID:

2-s2.0-84888813792
Contributors: Haeberle, J.; Henkel, K.; Gargouri, H.; Naumann, F.; Gruska, B.; Arens, M.; Tallarida, M.; Schmeißer, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
2013 | Journal article
DOI: 10.1116/1.4754557
EID:

2-s2.0-84871860820
Contributors: Kolanek, K.; Tallarida, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Linear dichroism in ALD layers of TiO<inf>2</inf>

Environmental Earth Sciences
2013 | Journal article
DOI: 10.1007/s12665-013-2836-7
EID:

2-s2.0-84888390848
Contributors: Das, C.; Tallarida, M.; Schmeißer, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Structural and luminescence properties of HfO<inf>2</inf> nanocrystals grown by atomic layer deposition on SiC/SiO<inf>2</inf> core/shell nanowires

Scripta Materialia
2013 | Journal article
DOI: 10.1016/j.scriptamat.2013.08.017
EID:

2-s2.0-84884586913
Contributors: Rossi, F.; Fabbri, F.; Tallarida, M.; Schmeisser, D.; Modreanu, M.; Attolini, G.; Salviati, G.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Structural and magnetic studies on iron oxide and iron-magnesium oxide thin films deposited using ferrocene and (Dimethylaminomethyl)ferrocene precursors

ECS Journal of Solid State Science and Technology
2013 | Journal article
DOI: 10.1149/2.004303jss
EID:

2-s2.0-84874824932
Contributors: Kukli, K.; Dimri, M.C.; Tamm, A.; Kemell, M.; Käämbre, T.; Vehkamäki, M.; Puttaswamy, M.; Stern, R.; Kuusik, I.; Kikas, A. et al.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Study of InP surfaces after wet chemical treatments

ECS Transactions
2013 | Conference paper
DOI: 10.1149/05806.0297ecst
EID:

2-s2.0-84904907223
Contributors: Cuypers, D.; Van Dorp, D.H.; Tallarida, M.; Brizzi, S.; Rodriguez, L.; Conard, T.; Arnauts, S.; Schmeisser, D.; Adelmann, C.; De Gendt, S.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Surface chemistry and interface formation during the atomic layer deposition of alumina from trimethylaluminum and water on indium phosphide

Chemistry of Materials
2013 | Journal article
DOI: 10.1021/cm304070h
EID:

2-s2.0-84875984212
Contributors: Adelmann, C.; Cuypers, D.; Tallarida, M.; Rodriguez, L.N.J.; De Clercq, A.; Friedrich, D.; Conard, T.; Delabie, A.; Seo, J.W.; Locquet, J.-P. et al.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Surface functionalization of nanostructured Fe<inf>2</inf>O<inf>3</inf> polymorphs: From design to light-activated applications

ACS Applied Materials and Interfaces
2013 | Journal article
DOI: 10.1021/am401475g
EID:

2-s2.0-84882739770
Contributors: Barreca, D.; Carraro, G.; Gasparotto, A.; MacCato, C.; Rossi, F.; Salviati, G.; Tallarida, M.; Das, C.; Fresno, F.; Korte, D. et al.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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GaAs clean up studied with synchrotron radiation photoemission

IOP Conference Series: Materials Science and Engineering
2012 | Conference paper
DOI: 10.1088/1757-899X/41/1/012003
EID:

2-s2.0-84874542014
Contributors: Tallarida, M.; Adelmann, C.; Delabie, A.; Elshocht, S.V.; Caymax, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

III-V/Oxide interfaces investigated with synchrotron radiation photoemission spectroscopy

ECS Transactions
2012 | Conference paper
DOI: 10.1149/05004.0123ecst
EID:

2-s2.0-84885824186
Contributors: Tallarida, M.; Adelmann, C.; Delabie, A.; Van Elshocht, S.; Caymax, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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In situ ALD experiments with synchrotron radiation photoelectron spectroscopy

Semiconductor Science and Technology
2012 | Journal article
DOI: 10.1088/0268-1242/27/7/074010
EID:

2-s2.0-84862734520
Contributors: Tallarida, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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In situ study of the atomic layer deposition of HfO 2 on Si

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
2012 | Journal article
DOI: 10.1116/1.3668080
EID:

2-s2.0-84855585823
Contributors: Kolanek, K.; Tallarida, M.; Michling, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Atomic layer deposition of nanolaminate oxide films on Si

Journal of Nanoparticle Research
2011 | Journal article
DOI: 10.1007/s11051-011-0319-x
EID:

2-s2.0-84857054604
Contributors: Tallarida, M.; Weisheit, M.; Kolanek, K.; Michling, M.; Engelmann, H.J.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Atomic layer deposition of ruthenium films from (ethylcyclopentadienyl) (pyrrolyl)ruthenium and oxygen

Journal of the Electrochemical Society
2011 | Journal article
DOI: 10.1149/1.3533387
EID:

2-s2.0-79551594756
Contributors: Kukli, K.; Kemell, M.; Puukilainen, E.; Aarik, J.; Aidla, A.; Sajavaara, T.; Laitinen, M.; Tallarida, M.; Sundqvist, J.; Ritala, M. et al.
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Massimo Tallarida via Scopus - Elsevier
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Atomic layer deposition reactor for fabrication of metal oxides

Physica Status Solidi (C) Current Topics in Solid State Physics
2011 | Journal article
DOI: 10.1002/pssc.201084011
EID:

2-s2.0-79953748689
Contributors: Kolanek, K.; Tallarida, M.; Michling, M.; Karavaev, K.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

Growth of TiO <inf>2</inf> with thermal and plasma enhanced atomic layer deposition

Journal of Nanoscience and Nanotechnology
2011 | Journal article
DOI: 10.1166/jnn.2011.5102
EID:

2-s2.0-84856898772
Contributors: Tallarida, M.; Friedrich, D.; Städter, M.; Michling, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Substrate reactivity effects in the atomic layer deposition of aluminum oxide from trimethylaluminum on ruthenium

Chemistry of Materials
2011 | Journal article
DOI: 10.1021/cm200276z
EID:

2-s2.0-79959974473
Contributors: Tallarida, M.; Kukli, K.; Michling, M.; Ritala, M.; Leskelä, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

Applied Physics Letters
2011 | Journal article
DOI: 10.1063/1.3615784
EID:

2-s2.0-79961084696
Contributors: Tallarida, M.; Adelmann, C.; Delabie, A.; Van Elshocht, S.; Caymax, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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ALD on high mobility channels: Engineering the proper gate stack passivation

ECS Transactions
2010 | Journal article
DOI: 10.1149/1.3485237
WOSUID:

WOS:000313617900002
Contributors: Sioncke, S.; Lin, H. C.; Adelmann, C.; Brammertz, G.; Delabie, A.; Conard, T.; Franquet, A.; Caymax, M.; Meuris, M.; Struyf, H. et al.
Source: Self-asserted source
Massimo Tallarida via ResearcherID

Atomic layer deposition and characterization of erbium oxide-doped zirconium oxide thin films

Journal of the Electrochemical Society
2010 | Journal article
DOI: 10.1149/1.3467843
EID:

2-s2.0-77956198125
Contributors: Tamm, A.; Kemell, M.; Kozlova, J.; Sajavaara, T.; Tallarida, M.; Kukli, K.; Sammelselg, V.; Ritala, M.; Leskelä, M.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Atomic layer deposition of HfO 2 investigated in situ by means of a noncontact atomic force microscopy

Materials Science- Poland
2010 | Journal article
EID:

2-s2.0-79951937609
Contributors: Kolanek, K.; Tallarida, M.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier

In situ studies of the atomic layer deposition of thin HfO<inf>2</inf> dielectrics by ultra high vacuum atomic force microscope

Thin Solid Films
2010 | Journal article
DOI: 10.1016/j.tsf.2009.12.060
EID:

2-s2.0-77955644916
Contributors: Kolanek, K.; Tallarida, M.; Karavaev, K.; Schmeisser, D.
Source: Self-asserted source
Massimo Tallarida via Scopus - Elsevier
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Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1′-methyl-ruthenocene

Journal of Crystal Growth
2010 | Journal article
DOI: 10.1016/j.jcrysgro.2010.03.033
EID:

2-s2.0-77955232208
Contributors: Kukli, K.; Aarik, J.; Aidla, A.; Uustare, T.; Jgi, I.; Lu, J.; Tallarida, M.; Kemell, M.; Kiisler, A.-A.; Ritala, M. et al.
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Massimo Tallarida via Scopus - Elsevier
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The band gap and band offset in ultrathin oxide-semiconductor heterostructures

Superlattices and Microstructures
2010 | Journal article
DOI: 10.1016/j.spmi.2009.12.003
EID:

2-s2.0-75849133442
Contributors: Schmeißer, D.; Henkel, K.; Bergholz, M.; Tallarida, M.
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Massimo Tallarida via Scopus - Elsevier
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