Personal information

Other IDs

Scopus Author ID: 45960903100

Keywords

Epitaxy, Thermoelectrics, Phase change materials, Superlattice, GeSbTe, SiGe, Tellurides

Countries

Italy

Activities

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Employment (5)

Università degli Studi di Milano-Bicocca: Milano, Lombardia, IT

2021-10-01 to present | Assistant Professor (Scienza dei Materiali)
Employment
Source: Self-asserted source
Stefano Cecchi

Paul-Drude-Institut für Festkörperelektronik: Berlin, Berlin, DE

2015-04-01 to 2021-09-30 | Scientist (Epitaxy)
Employment
Source: Self-asserted source
Stefano Cecchi

Laboratorio MDM: Agrate Brianza, Lombardia, IT

2013-09-01 to 2015-03-14 | Postdoc
Employment
Source: Self-asserted source
Stefano Cecchi

Politecnico di Milano: Milano, Lombardia, IT

2013-01-01 to 2013-08-31 | Postdoc (Physics)
Employment
Source: Self-asserted source
Stefano Cecchi

Politecnico di Milano: Milano, Lombardia, IT

2010-01-01 to 2012-12-31 | PhD student (Physics)
Employment
Source: Self-asserted source
Stefano Cecchi

Works (50 of 82)

Items per page:
Page 1 of 2

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys

Nanomaterials
2022-02 | Journal article | Author
DOI: 10.3390/nano12040631
Contributors: Stefano Cecchi; Iñaki López García; Antonio M. Mio; Eugenio Zallo; Omar Abou El Kheir; Raffaella Calarco; MARCO BERNASCONI; Giuseppe Nicotra; Stefania Privitera
Source: check_circle
Multidisciplinary Digital Publishing Institute

Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb<inf>2</inf>Te<inf>3</inf>Thin Films

Crystal Growth and Design
2021 | Journal article
DOI: 10.1021/acs.cgd.1c00508
EID:

2-s2.0-85112583819

Part of ISSN: 15287505 15287483
Contributors: Rimoldi, M.; Cecchini, R.; Wiemer, C.; Longo, E.; Cecchi, S.; Mantovan, R.; Longo, M.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Evolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films

Physica Status Solidi - Rapid Research Letters
2021 | Journal article
DOI: 10.1002/pssr.202000434
EID:

2-s2.0-85097016374

Part of ISSN: 18626270 18626254
Contributors: Zallo, E.; Dragoni, D.; Zaytseva, Y.; Cecchi, S.; Borgardt, N.I.; Bernasconi, M.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

Nature Electronics
2021 | Journal article
DOI: 10.1038/s41928-021-00653-2
EID:

2-s2.0-85117200899

Part of ISSN: 25201131
Contributors: Varotto, S.; Nessi, L.; Cecchi, S.; Sławińska, J.; Noël, P.; Petrò, S.; Fagiani, F.; Novati, A.; Cantoni, M.; Petti, D. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe

arXiv
2021 | Other
EID:

2-s2.0-85105716293

Part of ISSN: 23318422
Contributors: Varotto, S.; Nessi, L.; Cecchi, S.; Sławińska, J.; Noël, P.; Petrò, S.; Fagiani, F.; Novati, A.; Cantoni, M.; Petti, D. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Crystallization of nano amorphized regions in thin epitaxial layer of Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>

Journal of Physics D: Applied Physics
2020 | Journal article
DOI: 10.1088/1361-6463/ab71ae
EID:

2-s2.0-85082241080

Part of ISSN: 13616463 00223727
Contributors: D'Arrigo, G.; Mio, A.M.; Boschker, J.E.; Meli, A.; Cecchi, S.; Zallo, E.; Sciuto, A.; Buscema, M.; Bruno, E.; Calarco, R. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloys

Physical Review Applied
2020 | Journal article
DOI: 10.1103/PhysRevApplied.14.014028
EID:

2-s2.0-85088457307

Part of ISSN: 23317019
Contributors: Tisbi, E.; Placidi, E.; Magri, R.; Prosposito, P.; Francini, R.; Zaganelli, A.; Cecchi, S.; Zallo, E.; Calarco, R.; Luna, E. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Probing the in-plane electron spin polarization in Ge/Si0.15 Ge0.85 multiple quantum wells

Physical Review B
2020 | Journal article
DOI: 10.1103/PhysRevB.101.115408
EID:

2-s2.0-85083238502

Part of ISSN: 24699969 24699950
Contributors: Zucchetti, C.; Ballabio, A.; Chrastina, D.; Cecchi, S.; Finazzi, M.; Virgilio, M.; Isella, G.; Bottegoni, F.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Crystallization Study of Ge-Rich (GeTe) <inf>m</inf> (Sb <inf>2</inf> Te <inf>3</inf> ) <inf>n</inf> Using Two-Step Annealing Process

Physica Status Solidi - Rapid Research Letters
2019 | Journal article
DOI: 10.1002/pssr.201800632
EID:

2-s2.0-85061908030
Contributors: Di Biagio, F.; Cecchi, S.; Arciprete, F.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Interplay between Structural and Thermoelectric Properties in Epitaxial Sb<inf>2+</inf><inf>x</inf>Te<inf>3</inf> Alloys

Advanced Functional Materials
2019 | Journal article
DOI: 10.1002/adfm.201805184
EID:

2-s2.0-85056770003
Contributors: Cecchi, S.; Dragoni, D.; Kriegner, D.; Tisbi, E.; Zallo, E.; Arciprete, F.; Holý, V.; Bernasconi, M.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

2D or Not 2D: Strain Tuning in Weakly Coupled Heterostructures

Advanced Functional Materials
2018 | Journal article
DOI: 10.1002/adfm.201705901
EID:

2-s2.0-85041185171
Contributors: Wang, R.; Lange, F.R.L.; Cecchi, S.; Hanke, M.; Wuttig, M.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Erratum: Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys (Scientific reports (2017) 7 1 (1466))

Scientific reports
2018 | Journal article
DOI: 10.1038/s41598-018-23156-1
EID:

2-s2.0-85070507821

Part of ISSN: 20452322
Contributors: Zallo, E.; Cecchi, S.; Boschker, J.E.; Mio, A.M.; Arciprete, F.; Privitera, S.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Ferroelectric Control of the Spin Texture in GeTe

Nano Letters
2018 | Journal article
DOI: 10.1021/acs.nanolett.7b04829
EID:

2-s2.0-85046660855
Contributors: Rinaldi, C.; Varotto, S.; Asa, M.; Sławińska, J.; Fujii, J.; Vinai, G.; Cecchi, S.; Di Sante, D.; Calarco, R.; Vobornik, I. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Investigation of charge-to-spin conversion in GeTe

Proceedings of SPIE - The International Society for Optical Engineering
2018 | Conference paper
DOI: 10.1117/12.2320502
EID:

2-s2.0-85055513511
Contributors: Varotto, S.; Nessi, L.; Cecchi, S.; Calarco, R.; Bertacco, R.; Rinaldi, C.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Communications Physics
2018 | Journal article
DOI: 10.1038/s42005-018-0005-8
EID:

2-s2.0-85051255446

Part of ISSN: 23993650
Contributors: Kellner, J.; Bihlmayer, G.; Liebmann, M.; Otto, S.; Pauly, C.; Boschker, J.E.; Bragaglia, V.; Cecchi, S.; Wang, R.N.; Deringer, V.L. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

MOCVD growth and thermal analysis of Sb<inf>2</inf>Te<inf>3</inf> thin films and nanowires

2015 1st Workshop on Nanotechnology in Instrumentation and Measurement, NANOFIM 2015
2018 | Conference paper
DOI: 10.1109/NANOFIM.2015.8425350
EID:

2-s2.0-85052225010
Contributors: Longo, M.; Cecchi, S.; Selmo, S.; Fanciulli, M.; Wiemer, C.; Battaglia, J.-L.; Saci, A.; Kusiak, A.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Ferroelectric control of the spin texture in germanium telluride

arXiv
2017 | Other
EID:

2-s2.0-85104128207

Part of ISSN: 23318422
Contributors: Rinaldi, C.; Varotto, S.; Asa, M.; Slawinska, J.; Fujii, J.; Vinai, G.; Cecchi, S.; Calarco, R.; Vobornik, I.; Panaccione, G. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Improved structural and electrical properties in native Sb<inf>2</inf>Te<inf>3</inf>/Ge<inf>x</inf>Sb<inf>2</inf>Te<inf>3+x</inf> van der Waals superlattices due to intermixing mitigation

APL Materials
2017 | Journal article
DOI: 10.1063/1.4976828
EID:

2-s2.0-85014024332
Contributors: Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Mapping the band structure of gesbte phase change alloys around the fermi level

arXiv
2017 | Other
EID:

2-s2.0-85094398291

Part of ISSN: 23318422
Contributors: Kellner, J.; Bihlmayer, G.; Liebmann, M.; Otto, S.; Pauly, C.; Boschker, J.E.; Bragaglia, V.; Cecchi, S.; Wang, R.N.; Deringer, V.L. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Scientific Reports
2017 | Journal article
DOI: 10.1038/s41598-017-01502-z
EID:

2-s2.0-85018755941
Contributors: Zallo, E.; Cecchi, S.; Boschker, J.E.; Mio, A.M.; Arciprete, F.; Privitera, S.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Role of interfaces on the stability and electrical properties of Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> crystalline structures

Scientific Reports
2017 | Journal article
DOI: 10.1038/s41598-017-02710-3
EID:

2-s2.0-85020202398
Contributors: Mio, A.M.; Privitera, S.M.S.; Bragaglia, V.; Arciprete, F.; Cecchi, S.; Litrico, G.; Persch, C.; Calarco, R.; Rimini, E.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Thermal resistance measurement of In<inf>3</inf>SbTe<inf>2</inf> nanowires

Physica Status Solidi (A) Applications and Materials Science
2017 | Journal article
DOI: 10.1002/pssa.201600500
EID:

2-s2.0-85006988641
Contributors: Battaglia, J.-L.; Saci, A.; De, I.; Cecchini, R.; Selmo, S.; Fanciulli, M.; Cecchi, S.; Longo, M.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Unconventional strain relaxation of Sb<inf>2</inf>Te<inf>3</inf> grown on a GeTe/Sb<inf>2</inf>Te<inf>3</inf>/GeTe heterostructure on Si(111)

Nanoscience and Nanotechnology Letters
2017 | Journal article
DOI: 10.1166/nnl.2017.2441
EID:

2-s2.0-85028011958
Contributors: Cecchi, S.; Wang, R.N.; Zallo, E.; Calarco, R.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Effect of asymmetric concentration profile on thermal conductivity in Ge/SiGe superlattices

Applied Physics Letters
2016 | Journal article
DOI: 10.1063/1.4949491
EID:

2-s2.0-84971328468
Contributors: Hahn, K.R.; Cecchi, S.; Colombo, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Low power phase change memory switching of ultra-thin In<inf>3</inf>Sb<inf>1</inf>Te<inf>2</inf> nanowires

Applied Physics Letters
2016 | Journal article
DOI: 10.1063/1.4968510
EID:

2-s2.0-84999040025
Contributors: Selmo, S.; Cecchini, R.; Cecchi, S.; Wiemer, C.; Fanciulli, M.; Rotunno, E.; Lazzarini, L.; Rigato, M.; Pogany, D.; Lugstein, A. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Scientific Reports
2016 | Journal article
DOI: 10.1038/srep23843
EID:

2-s2.0-84962799624
Contributors: Bragaglia, V.; Arciprete, F.; Zhang, W.; Mio, A.M.; Zallo, E.; Perumal, K.; Giussani, A.; Cecchi, S.; Boschker, J.E.; Riechert, H. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

MOCVD growth and structural characterization of In-Sb-Te nanowires

Physica Status Solidi (A) Applications and Materials Science
2016 | Journal article
DOI: 10.1002/pssa.201532381
EID:

2-s2.0-84958103415
Contributors: Selmo, S.; Cecchi, S.; Cecchini, R.; Wiemer, C.; Fanciulli, M.; Rotunno, E.; Lazzarini, L.; Longo, M.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Nature Communications
2016 | Journal article
DOI: 10.1038/ncomms13886
EID:

2-s2.0-85006932898
Contributors: Giorgioni, A.; Paleari, S.; Cecchi, S.; Vitiello, E.; Grilli, E.; Isella, G.; Jantsch, W.; Fanciulli, M.; Pezzoli, F.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

The use of silicon-germanium superlattices for thermoelectric devices and microfabricated generators

ECS Transactions
2016 | Conference paper
DOI: 10.1149/07508.0469ecst
EID:

2-s2.0-84991727517
Contributors: Ferre Llin, L.; Mirando, F.; Samarelli, A.; Odia, A.; Cecchi, S.; Etzelstorfer, T.; Muller Gubler, E.; Chrastina, D.; Isella, G.; Stangl, J. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Thermoelectric cross-plane properties on p- and n-Ge/Si<inf>x</inf>Ge<inf>1-x</inf> superlattices

Thin Solid Films
2016 | Journal article
DOI: 10.1016/j.tsf.2015.09.059
EID:

2-s2.0-84944096848
Contributors: Ferre Llin, L.; Samarelli, A.; Cecchi, S.; Chrastina, D.; Isella, G.; Müller Gubler, E.; Etzelstorfer, T.; Stangl, J.; Paul, D.J.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Modelling and experimental verification of a Ge/SiGe thermoelectric generator

2015 11th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2015
2015 | Conference paper
DOI: 10.1109/PRIME.2015.7251383
EID:

2-s2.0-84946893473
Contributors: Odia, A.; Llin, L.F.; Paul, D.J.; Cecchi, S.; Isella, G.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Optical interconnects based on Ge/SiGe multiple quantum well structures

CLEO: Science and Innovations, CLEO-SI 2015
2015 | Conference paper
DOI: 10.1364/CLEO_SI.2015.SM3G.1
EID:

2-s2.0-84935458081
Contributors: Marris-Morini, D.; Chaisakul, P.; Frigerio, J.; Chrastina, D.; Vakarin, V.; Cecchi, S.; Isella, G.; Vivien, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Optical interconnects based on Ge/SiGe multiple quantum well structures

Conference on Lasers and Electro-Optics Europe - Technical Digest
2015 | Conference paper
EID:

2-s2.0-84954070330
Contributors: Marris-Morini, D.; Chaisakul, P.; Frigerio, J.; Chrastina, D.; Vakarin, V.; Cecchi, S.; Isella, G.; Vivien, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Review of thermoelectric characterization techniques suitable for SiGe multilayer structures

European Physical Journal B
2015 | Journal article
DOI: 10.1140/epjb/e2015-50672-x
EID:

2-s2.0-84925778441
Contributors: Cecchi, S.; Llin, L.F.; Etzelstorfer, T.; Samarelli, A.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Structural investigations of the α<inf>12</inf> Si-Ge superstructure

Journal of Applied Crystallography
2015 | Journal article
DOI: 10.1107/S1600576715000849
EID:

2-s2.0-84922324939
Contributors: Etzelstorfer, T.; Ahmadpor Monazam, M.R.; Cecchi, S.; Kriegner, D.; Chrastina, D.; Gatti, E.; Grilli, E.; Rosemann, N.; Chatterjee, S.; Holý, V. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction

Applied Physics Letters
2014 | Journal article
DOI: 10.1063/1.4862688
EID:

2-s2.0-84893118707
Contributors: Mondiali, V.; Bollani, M.; Cecchi, S.; Richard, M.-I.; Schülli, T.; Chahine, G.; Chrastina, D.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

High quality SiGe waveguide platform for Ge photonics on bulk silicon substrates

IEEE International Conference on Group IV Photonics GFP
2014 | Conference paper
DOI: 10.1109/Group4.2014.6961950
EID:

2-s2.0-84914171415
Contributors: Chaisakul, P.; Marris-Morini, D.; Frigerio, J.; Chrastina, D.; Rouifed, M.S.; Cecchi, S.; Isella, G.; Vivien, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Individual heterojunctions of 3D germanium crystals on silicon CMOS for monolithically integrated X-ray detector

Physica Status Solidi (A) Applications and Materials Science
2014 | Journal article
DOI: 10.1002/pssa.201300175
EID:

2-s2.0-84892907817
Contributors: Kreiliger, T.; Falub, C.V.; Taboada, A.G.; Isa, F.; Cecchi, S.; Kaufmann, R.; Niedermann, P.; Pezous, A.; Mouaziz, S.; Dommann, A. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Integrated germanium optical interconnects on silicon substrates

Nature Photonics
2014 | Journal article
DOI: 10.1038/nphoton.2014.73
EID:

2-s2.0-84901692561
Contributors: Chaisakul, P.; Marris-Morini, D.; Frigerio, J.; Chrastina, D.; Rouifed, M.-S.; Cecchi, S.; Crozat, P.; Isella, G.; Vivien, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules

Journal of Electronic Materials
2014 | Journal article
DOI: 10.1007/s11664-014-3233-z
EID:

2-s2.0-84920258211
Contributors: Samarelli, A.; Llin, L.F.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Gubler, E.M.; Weaver, J.M.R.; Dobson, P. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Photonic interconnection made by a Ge/SiGe MQW modulator connected to a Ge/SiGe MQW photodetector through a SiGe waveguide

ECS Transactions
2014 | Conference paper
DOI: 10.1149/06406.0761ecst
EID:

2-s2.0-84921289696
Contributors: Frigerio, J.; Chaisakul, P.; Marris-Morini, D.; Rouifed, M.-S.; Cecchi, S.; Chrastina, D.; Isella, G.; Vivien, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Prospects for SiGe thermoelectric generators

Solid-State Electronics
2014 | Journal article
DOI: 10.1016/j.sse.2014.04.003
EID:

2-s2.0-84902247662
Contributors: Samarelli, A.; Ferre Llin, L.; Cecchi, S.; Frigerio, J.; Chrastina, D.; Isella, G.; Müller Gubler, E.; Etzelstorfer, T.; Stangl, J.; Zhang, Y. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Strain release management in SiGe/Si films by substrate patterning

Applied Physics Letters
2014 | Journal article
DOI: 10.1063/1.4904455
EID:

2-s2.0-84918778233
Contributors: Mondiali, V.; Bollani, M.; Chrastina, D.; Rubert, R.; Chahine, G.; Richard, M.I.; Cecchi, S.; Gagliano, L.; Bonera, E.; Schülli, T. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

The thermoelectric properties of Ge/SiGe based superlattices: From materials to Energy Harvesting Modules

ECS Transactions
2014 | Conference paper
DOI: 10.1149/06406.0929ecst
EID:

2-s2.0-84921285049
Contributors: Samarelli, A.; Ferre Llin, L.; Cecchi, S.; Frigerio, J.; Etzelstorfer, T.; Muller Gubler, E.; Stangl, J.; Chrastina, D.; Isella, G.; Paul, D.J.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Thermal transport through short-period SiGe nanodot superlattices

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4863115
EID:

2-s2.0-84907485631
Contributors: Chen, P.; Zhang, J.J.; Feser, J.P.; Pezzoli, F.; Moutanabbir, O.; Cecchi, S.; Isella, G.; Gemming, T.; Baunack, S.; Chen, G. et al.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4867368
EID:

2-s2.0-84896772235
Contributors: Cecchi, S.; Gatti, E.; Chrastina, D.; Frigerio, J.; Müller Gubler, E.; Paul, D.J.; Guzzi, M.; Isella, G.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Controlling the polarization dynamics by strong THz fields in photoexcited germanium quantum wells

New Journal of Physics
2013 | Journal article
DOI: 10.1088/1367-2630/15/7/075004
EID:

2-s2.0-84880438064
Contributors: Köster, N.S.; Klettke, A.C.; Ewers, B.; Woscholski, R.; Cecchi, S.; Chrastina, D.; Isella, G.; Kira, M.; Koch, S.W.; Chatterjee, S.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Electro-refractive effect in Ge/SiGe multiple quantum wells

Applied Physics Letters
2013 | Journal article
DOI: 10.1063/1.4792271
EID:

2-s2.0-84874253306
Contributors: Frigerio, J.; Chaisakul, P.; Marris-Morini, D.; Cecchi, S.; Roufied, M.S.; Isella, G.; Vivien, L.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Epitaxial Si<inf>1-x</inf>Ge<inf>x</inf> alloys studied by spin-polarized photoemission

Physical Review B - Condensed Matter and Materials Physics
2013 | Journal article
DOI: 10.1103/PhysRevB.88.115209
EID:

2-s2.0-84884850163
Contributors: Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Ciccacci, F.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier

Erratum: Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations (Physical Review B (2012) 86 (201303(R)) DOI:10.1103/PhysRevB.86.201303)

Physical Review B - Condensed Matter and Materials Physics
2013 | Journal article
DOI: 10.1103/PhysRevB.87.159905
EID:

2-s2.0-84877061286
Contributors: Kolata, K.; Köster, N.S.; Chernikov, A.; Drexler, M.J.; Gatti, E.; Cecchi, S.; Chrastina, D.; Isella, G.; Guzzi, M.; Chatterjee, S.
Source: Self-asserted source
Stefano Cecchi via Scopus - Elsevier
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