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Works (31)

Physics-Based Modeling and Experimental Study of Conductivity and Percolation Threshold in Carbon Black Polymer Nanocomposites

Applied Composite Materials
2024 | Journal article
EID:

2-s2.0-85173953095

Part of ISSN: 15734897 0929189X
Contributors: Payandehpeyman, J.; Mazaheri, M.; Zeraati, A.S.; Jamasb, S.; Sundararaj, U.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

A Subcircuit-Based Model for the Accumulation-Mode MOS Capacitor

Journal of Circuits, Systems and Computers
2023-02 | Journal article
Contributors: Shahriar Jamasb; Mohammad Bagher Khodabakhshi; Rasool Baghbani
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Characteristics of SARS-CoV2 that may be useful for nanoparticle pulmonary drug delivery

Journal of Drug Targeting
2022 | Journal article
EID:

2-s2.0-85113789650

Part of ISSN: 10292330 1061186X
Contributors: Rabiei, M.; Kashanian, S.; Samavati, S.S.; Derakhshankhah, H.; Jamasb, S.; McInnes, S.J.P.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Modeling of Effective Electrical Conductivity and Percolation Behavior in Conductive-Polymer Nanocomposites Reinforced with Spherical Carbon Black

Applied Composite Materials
2022 | Journal article
EID:

2-s2.0-85118570898

Part of ISSN: 15734897 0929189X
Contributors: Mazaheri, M.; Payandehpeyman, J.; Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Nanotechnology application in drug delivery to osteoarthritis (OA), rheumatoid arthritis (RA), and osteoporosis (OSP)

Journal of Drug Delivery Science and Technology
2021 | Journal article
EID:

2-s2.0-85092012823

Part of ISSN: 17732247
Contributors: Rabiei, M.; Kashanian, S.; Samavati, S.S.; Derakhshankhah, H.; Jamasb, S.; McInnes, S.J.P.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Characterization and Modeling of the Polysilicon Emitter Contact for Circuit Simulation

Journal of Circuits, Systems and Computers
2021-11 | Journal article
Contributors: Shahriar Jamasb
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Current-Mode Signal Enhancement in the Ion-Selective Field Effect Transistor (ISFET) in the Presence of Drift and Hysteresis

IEEE Sensors Journal
2021-02-15 | Journal article
Contributors: Shahriar Jamasb
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Nanomaterial and advanced technologies in transdermal drug delivery

Journal of Drug Targeting
2020 | Journal article
EID:

2-s2.0-85076929327

Part of ISSN: 10292330 1061186X
Contributors: Rabiei, M.; Kashanian, S.; Samavati, S.S.; Jamasb, S.; McInnes, S.J.P.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Pulsed entanglement and quantum steering in a three-mode electro-optomechanical system

Quantum Information Processing
2020 | Journal article
EID:

2-s2.0-85086720732

Part of ISSN: 15731332 15700755
Contributors: Mazaheri, M.; Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Active Targeting Towards and Inside the Brain based on Nanoparticles: A Review

Current Pharmaceutical Biotechnology
2020-04-29 | Journal article
Contributors: Morteza Rabiei; Soheila Kashanian; Seyedeh S. Samavati; Shahriar Jamasb; Steven J.P. McInnes
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A method for image edge detection based on interval-valued fuzzy sets

Journal of Intelligent and Fuzzy Systems
2019 | Journal article
EID:

2-s2.0-85072211625

Part of ISSN: 18758967 10641246
Contributors: Baghbani, R.; Jamasb, S.; Khodabakhshi, M.B.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Continuous monitoring of pH and blood gases using ion-sensitive and gas-sensitive field effect transistors operating in the amperometric mode in presence of drift

Biosensors
2019 | Journal article
EID:

2-s2.0-85063298865

Part of ISSN: 20796374
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Effect of side gates doping on graphene self-switching nano-diode rectification

Materials Research Express
2019 | Journal article
EID:

2-s2.0-85066039232

Part of ISSN: 20531591
Contributors: Ghaziasadi, H.; Jamasb, S.; Nayebi, P.; Fouladian, M.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Turkish Journal of Electrical Engineering and Computer Sciences
2019 | Journal article
EID:

2-s2.0-85072686170

Part of ISSN: 13036203 13000632
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion Implantation

IEEE Journal of the Electron Devices Society
2018 | Journal article
Contributors: Ali Elyasi; Majid Fouladian; Shahriar Jamasb
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Level shifting circuit for hybrid superconductor-to-semiconductor interface

Physica C: Superconductivity and its Applications
2018 | Journal article
EID:

2-s2.0-85050113534

Part of ISSN: 09214534
Contributors: Aghighi, F.; Jamasb, S.; Mazaheri, M.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Rectification of graphene self-switching diodes: First-principles study

Physica E: Low-Dimensional Systems and Nanostructures
2018 | Journal article
EID:

2-s2.0-85041390100

Part of ISSN: 13869477
Contributors: Ghaziasadi, H.; Jamasb, S.; Nayebi, P.; Fouladian, M.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Extension of the neuronal membrane model to account for suppression of the action potential by a constant magnetic field

Biophysics (Russian Federation)
2017 | Journal article
EID:

2-s2.0-85028009176

Part of ISSN: 15556654 00063509
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Kinetics of the hydration reaction at the electrolyte–insulator interface

Surface Engineering and Applied Electrochemistry
2017 | Journal article
EID:

2-s2.0-85016142805

Part of ISSN: 19348002 10683755
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

A time-domain method for correction of instability in sensors based on field effect transistors (Fets)

International Journal of Circuits, Systems and Signal Processing
2016 | Journal article
EID:

2-s2.0-84977103584

Part of ISSN: 19984464
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Biophysical basis for the mechanism of action potential initiation in presence of static magnetic fields

International Journal of Biology and Biomedical Engineering
2016 | Journal article
EID:

2-s2.0-85051792239

Part of ISSN: 19984510
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Electrical transport in the superconducting and normal states in Y<sub>2</sub>Ba<sub>5</sub>Cu<sub>7</sub>O<sub>x</sub> high-temperature superconductor

Solid State Communications
2016 | Journal article
EID:

2-s2.0-84964330451

Part of ISSN: 00381098
Contributors: Mazaheri, M.; Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

An energy management system (EMS) strategy for combined heat and power (CHP) systems based on a hybrid optimization method employing fuzzy programming

Energy
2013 | Journal article
EID:

2-s2.0-84871719024

Part of ISSN: 03605442
Contributors: Moradi, M.H.; Hajinazari, M.; Jamasb, S.; Paripour, M.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Classification and comparison of maximum power point tracking techniques for photovoltaic system: A review

Renewable and Sustainable Energy Reviews
2013 | Journal article
EID:

2-s2.0-84870837973

Part of ISSN: 13640321
Contributors: Reza Reisi, A.; Hassan Moradi, M.; Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs)

IEEE Sensors Journal
2004 | Journal article
EID:

2-s2.0-10044236474

Part of ISSN: 1530437X
Contributors: Jamasb, S.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

A 622MHz stand-alone LVDS driver pad in 0.18-μm CMOS

Midwest Symposium on Circuits and Systems
2001 | Conference paper
EID:

2-s2.0-0035573395

Contributors: Jamasb, S.; Jalilizeinali, R.; Chau, P.M.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Determination of low-frequency noise spectrum in ion-sensitive field effect transistors (ISFET's) based on a physical model for drift

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
2001 | Conference paper
EID:

2-s2.0-6344241952

Contributors: Jamasb, S.; Collins, S.D.; Smith, R.L.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

A physical model for drift in pH ISFETs

Sensors and Actuators, B: Chemical
1998 | Journal article
EID:

2-s2.0-0032092253

Part of ISSN: 09254005
Contributors: Jamasb, S.; Collins, S.; Smith, R.L.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

A physical model for threshold voltage instability in Si<sub>3</sub>N<sub>4</sub>-Gate H<sup>+</sup>-sensitive FET's (pH ISFET's)

IEEE Transactions on Electron Devices
1998 | Journal article
EID:

2-s2.0-0032097792

Part of ISSN: 00189383
Contributors: Jamasb, S.; Collins, S.D.; Smith, R.L.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Correction of instability in ion-selective field effect transistors (ISFET's) for accurate continuous monitoring of pH

Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings
1997 | Conference paper
EID:

2-s2.0-0031293481

Part of ISSN: 05891019
Contributors: Jamasb, Shahriar; Collins, Scott D.; Smith, Rosemary L.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Physically-based model for drift in Al<sub>2</sub>O<sub>3</sub>-gate pH ISFET's

International Conference on Solid-State Sensors and Actuators, Proceedings
1997 | Conference paper
EID:

2-s2.0-0030683180

Contributors: Jamasb, Shahriar; Collins, Scott D.; Smith, Rosemary L.
Source: Self-asserted source
Shahriar Jamasb via Scopus - Elsevier

Peer review (27 reviews for 5 publications/grants)

Review activity for Applied physics. (2)
Review activity for Electrochimica acta. (1)
Review activity for IEEE access : (2)
Review activity for IEEE sensors journal. (20)
Review activity for Journal of computational electronics. (2)