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Employment (2)

TU Wien: Vienna, AT

Employment
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TU Wien

TuWien: Vienna, AT

2017-10-01 to present
Employment
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Daniele Nazzari

Works (17)

Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors

IEEE Transactions on Electron Devices
2025 | Journal article
DOI: 10.1109/TED.2025.3545802
Contributors: A. Fuchsberger; A. Verdianu; L. Wind; D. Nazzari; Enrique Prado Navarrete; C. Wilfingseder; J. Aberl; M. Brehm; J-M. Hartmann; M. Sistani et al.
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Crossref

Si/Ge1−xSnx/Si transistors with highly transparent Al contacts

Solid-State Electronics
2025-04 | Journal article
DOI: 10.1016/j.sse.2025.109069
Contributors: Lukas Wind; Stefan Preiß; Daniele Nazzari; Johannes Aberl; Enrique Prado Navarrete; Moritz Brehm; Lilian Vogl; Andrew M. Minor; Masiar Sistani; Walter M. Weber
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Crossref

Nonvolatile Reconfigurable Transistor via Ferroelectrically Induced Current Modulation

ACS Applied Materials & Interfaces
2025-02-19 | Journal article
DOI: 10.1021/acsami.4c16400
Contributors: Daniele Nazzari; Lukas Wind; Masiar Sistani; Dominik Mayr; Kihye Kim; Viktor Wahler; Walter M. Weber
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Crossref

A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

IEEE Journal of the Electron Devices Society
2024 | Journal article
DOI: 10.1109/JEDS.2024.3432971
Contributors: Andreas Fuchsberger; Lukas Wind; Daniele Nazzari; Alexandra Dobler; Johannes Aberl; Enrique Prado Navarrete; Moritz Brehm; Lilian Vogl; Peter Schweizer; Sebastian Lellig et al.
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Crossref

A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States

IEEE Journal of the Electron Devices Society
2024 | Journal article
DOI: 10.1109/JEDS.2024.3350209
Contributors: Andreas Fuchsberger; Lukas Wind; Daniele Nazzari; Larissa Kühberger; Daniel Popp; Johannes Aberl; Enrique Prado Navarrete; Moritz Brehm; Lilian Vogl; Peter Schweizer et al.
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Crossref

Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3485600
Contributors: Andreas Fuchsberger; Lukas Wind; Daniele Nazzari; Enrique Prado Navarrete; Johannes Aberl; Moritz Brehm; Masiar Sistani; Walter M. Weber
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Crossref

Bias-tunable temperature coefficient of resistance in Ge transistors

Applied Physics Letters
2024-02-26 | Journal article
DOI: 10.1063/5.0191503
Contributors: R. Behrle; J. Smoliner; L. Wind; D. Nazzari; A. Lugstein; W. M. Weber; M. Sistani
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Crossref

Surface Protection and Activation of Mid-IR Plasmonic Waveguides for Spectroscopy of Liquids

Journal of Lightwave Technology
2024-01-15 | Journal article
DOI: 10.1109/JLT.2023.3321034
Contributors: Mauro David; Ismael C. Doganlar; Daniele Nazzari; Elena Arigliani; Dominik Wacht; Masiar Sistani; Hermann Detz; Georg Ramer; Bernhard Lendl; Walter M. Weber et al.
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Crossref

Reliably straining suspended van der Waals heterostructures

APL Materials
2023-11-01 | Journal article
DOI: 10.1063/5.0166460
Contributors: Daniele Nazzari; Jakob Genser; Masiar Sistani; Maximilian G. Bartmann; Xavier Cartoixà; Riccardo Rurali; Walter M. Weber; Alois Lugstein
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Crossref

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts

Advanced Electronic Materials
2023-06 | Journal article
DOI: 10.1002/aelm.202201259
Contributors: Andreas Fuchsberger; Lukas Wind; Masiar Sistani; Raphael Behrle; Daniele Nazzari; Johannes Aberl; Enrique Prado Navarrete; Lada Vukŭsić; Moritz Brehm; Peter Schweizer et al.
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Crossref

Epitaxial Growth of Crystalline CaF2 on Silicene

ACS Applied Materials & Interfaces
2022-07-20 | Journal article
DOI: 10.1021/acsami.2c06293
Contributors: Daniele Nazzari; Jakob Genser; Viktoria Ritter; Ole Bethge; Emmerich Bertagnolli; Tibor Grasser; Walter M. Weber; Alois Lugstein
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Crossref

Optical Signatures of Dirac Electrodynamics for hBN-Passivated Silicene on Au(111)

Nano Letters
2021-06-23 | Journal article
DOI: 10.1021/acs.nanolett.1c01440
Contributors: Jakob Genser; Daniele Nazzari; Viktoria Ritter; Ole Bethge; Kenji Watanabe; Takashi Taniguchi; Emmerich Bertagnolli; Friedhelm Bechstedt; Alois Lugstein
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Crossref

Highly Biaxially Strained Silicene on Au(111)

The Journal of Physical Chemistry C
2021-05-13 | Journal article
DOI: 10.1021/acs.jpcc.0c11033
Contributors: Daniele Nazzari; Jakob Genser; Viktoria Ritter; Ole Bethge; Emmerich Bertagnolli; Georg Ramer; Bernhard Lendl; Kenji Watanabe; Takashi Taniguchi; Riccardo Rurali et al.
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Crossref

Effect of the Density of Reactive Sites in P(S‐r‐MMA) Film during Al2O3 Growth by Sequential Infiltration Synthesis

Advanced Materials Interfaces
2019-06 | Journal article
DOI: 10.1002/admi.201900503
Part of ISSN: 2196-7350
Part of ISSN: 2196-7350
Contributors: federica caligiore; Daniele Nazzari; Elena Cianci; Katia Sparnacci; Michele Laus; Michele Perego; Gabriele Seguini
Source: Self-asserted source
Daniele Nazzari

Silicene Passivation by Few-Layer Graphene

ACS Applied Materials & Interfaces
2019-04-03 | Journal article
DOI: 10.1021/acsami.8b20751
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Contributors: Viktoria Ritter; Jakob Genser; Daniele Nazzari; Ole Bethge; Emmerich Bertagnolli; Alois Lugstein
Source: Self-asserted source
Daniele Nazzari

Trimethylaluminum Diffusion in PMMA Thin Films during Sequential Infiltration Synthesis: In Situ Dynamic Spectroscopic Ellipsometric Investigation

Advanced Materials Interfaces
2018-10 | Journal article
DOI: 10.1002/admi.201801016
Part of ISSN: 2196-7350
Part of ISSN: 2196-7350
Contributors: Elena Cianci; Daniele Nazzari; Gabriele Seguini; Michele Perego
Source: Self-asserted source
Daniele Nazzari

Hyperspectral imaging with deformable gratings fabricated with metal-elastomer nanocomposites

Review of Scientific Instruments
2017-11-01 | Journal article
DOI: 10.1063/1.5009180
Part of ISSN: 0034-6748
Part of ISSN: 1089-7623
Contributors: Marco Potenza; Daniele Nazzari; Llorenç Cremonesi; Ilaria Denti; Paolo Milani
Source: Self-asserted source
Daniele Nazzari
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